ROHM QSX8 Technical data

QSX8

Transistors

General purpose amplification (30V, 1A)

QSX8

zApplicat ion

Low frequency amplifier

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.
V

CE (sat) 350mV

at Ic= 500mA / I

B= 25mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

Single pulse, PW=1ms

∗

1

Each Terminal Mounted on a Recommended

∗

2

Mounted on a 25mm

∗

3

t

×

25mm

×

0.8mm Ceramic substrate

VCBO V
V

CEO V

V

EBO V

I

C A

I

CP A

C

P

Tj

Tstg

Limits

−55 to +150 °C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

CBO

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage

DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

BV
BV
BV

I
I

V

Cob

CEO

EBO

CBO

EBO

CE(sat)

FE

h

T

f

30
30

6
1
2

0.9

150

mW/TOTAL500

W/TOTAL1.25

W/ELEMENT

30

−−

30

−−

6

−−

−−

−−

120 350 mV

−

270

−

320

−

7

−

zExternal dimensions (Unit : mm)

0.4

0.16

ROHM : TSMT6

Abbreviated symbol : X08

zEquivalent Circuit

∗

1

∗

2

∗

3

∗

3

°C

(1) (2) (3)

V

C

=10µA

I

V

C

=1mA

I

V

E

=10µA

I
100 nA
100 nA

680

−

−

VCB=30V

V

EB

=6V

IC/IB=500mA/25mA

CE/IC

− V

MHz

pF

=2V/100mA
VCE=2V, IE=−100mA, f=100MHz
VCB=10V, IE=0A, f=1MHz

2.8

1.6

)

1

(

)

2

(
)

3

(

(6)(5)(4)

Each lead has same dimensions

(4)(5)(6)

2.9

0.85

∗

∗

Rev.A 1/2

QSX8

Transistors

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QSX8

zElectrical characteristic curves

1000

FE

Ta=25°C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1
COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

1

(A)

C

0.1

Ta=100°C

0.01

Ta=100°C

Ta=−40°C

Ta=25°C

Ta=−40°C

VCE=2V
Pulsed

C

(A)

VCE=2V
Pulsed

Taping

TR

3000

10

(V)

(V)

CE (sat)

BE (sat)

BASE SATURATION VOLTAGE : V

Ta=−40°C

1

0.1

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

V

Ta=25°C

Ta=100°C

V

COLLECTOR CURRENT : I

BE(sat)

CE(sat)

Ta=100°C

IC/IB=20/1

IC/IB=20
Pulsed

Pulsed

Ta=25°C

Ta=−40°C

C

10

(V)

CE(sat)

1

0.1

0.01

0.001

(A)

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

IC/IB=50/1

IC/IB=20/1

IC/IB=10/1

COLLECTOR CURRENT : I

Ta=25°C

CE

=2V

V

C

(A)

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tdon

100

tr

10

tf

tstg

COLLECTOR CURRENT : I

0.001
0

0.5

BASE TO EMITTER VOLTAGE : V

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

10

1

0.01 0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

IC=0A
f=1MHz
Ta=25°C

VCE=2V

TRANSITION FREQUENCY : f

1.51.0

BE

(V)

10

0.01 0.1 1
EMITTER CURRENT : I

Ta=25°C
f=100MHz

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

EB

(V)

CB

(V)

SWITCHING TIME : (ns)

Ta=25°C

CE

=5V

V

C/IB

=20/1

I

1

0.01 0.1 1
COLLECTOR CURRENT : I

Fig.6 Switching time

C

(A)

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2