ROHM QSX7 Schematic [ru]

QSX7

Transistors

General purpose amplification (12V, 1.5A)

QSX7

zApplica tion

Low frequency amplifier

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) 200mV

At I

C = 500mA / IB = 25mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

Single pulse, PW=1ms

∗

1

Each Terminal Mounted on a Recommended

∗

2

Mounted on a 25mm

∗

3

t

×

25mm

×

0.8mm Ceramic substrate

V

CBO
CEO

V
V

EBO

I

CP

I

P

Tj

Tstg

C

C

Limits

150

−55 to +150 °C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV
BV

BV

V

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

FE

h

f

T

Cob

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

15
12

6

1.5
3

0.9

mW/TOTAL500

W/TOTAL1.25

W/ELEMENT

15

−−

12

−−

6

−−

−−

−−

85 200 mV

−

270

−

400

−

12

−

zExternal dimensions (Unit : mm)

0.4

0.16

Abbreviated symbol : X07

zEquivalent circuit

V
V
V
A

1

∗

A

2

∗

∗

3

∗

3

°C

Tr

1

(1) (2) (3)

V

I

C

=10µA

V

C

=1mA

I

V

E

=10µA

I
100 nA
100 nA

680

−

−

VCB=15V

EB

=6V

V

IC/IB=500mA/25mA

− V

CE/IC

=2V/200mA

MHz

VCE=2V, IE=−200mA, f=100MHz

pF

VCB=10V, IE=0A, f=1MHz

2.8

1.6

)

1

(

)

2

(
)

3

(

(6)(5)(4)

Each lead has same dimensions

(4)(5)(6)

Tr

2

2.9

0.85

∗

∗

Rev.B 1/2

QSX7

Transistors

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QSX7

zElectrical characteristic curves

1000

FE

Ta=25°C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.1 DC current gain

10

(A)

C

1

Ta=100°C

0.1

Ta=100°C

Ta=−40°C

VCE=2V
Pulsed

C

(A)

vs. collector current

VCE=2V
Pulsed

Ta=25°C

Taping

TR

3000

10

(V)

(V)

BE (sat)

BASE SATURATION VOLTAGE : V

1000

Ta=−40°C

CE (sat)

COLLECTOR SATURATION VOLTAGE : V

Ta=25°C

V

Ta=100°C

1

0.1

V

0.01

0.001

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

BE(sat)

Ta=100°C

CE(sat)

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

(MHz)

T

100

IC/IB=20/1

IC/IB=20

Pulsed

Pulsed

Ta=25°C

Ta=−40°C

C

(A)

1

(V)

CE(sat)

0.1

IC/IB=50/1

0.01

IC/IB=20/1

IC/IB=10/1

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

100

tstg

Ta=25°C

CE

=2V

V

C

(A)

Ta=25°C

CE

=2V

V
f=100MHz

0.01

COLLECTOR CURRENT : I

0.001
0

0.5

BASE TO EMITTER VOLTAGE : V

Ta=−40°C

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

10

1

0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

IE=0A
f=1MHz
Ta=25°C

VCE=2V

E

(A)

Ta=25°C
Pulsed

TRANSITION FREQUENCY : f

10

1.51.0

−0.001 −0.01 −0.1 −1 −10

BE

(V)

EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

EB

(V)

CB

(V)

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

tdon

tf

tr

C

Fig.6 Switching time

(A)

Fig.7 Collector output capacitacitance
vs.collector-base voltage
Emitter input capacitance
vs.emitter-base voltage

Rev.B 2/2