ROHM QSX6 Technical data

QSX6

Transistors

Low frequency amplifier

QSX6

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

CE(sat) 350mV

At I

C = 1A / IB = 50mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

Single pulse, PW=1ms

∗1
∗2

Each Terminal Mounted on a Recommended

∗3

Mounted on a 25mm

t

×

25mm

×

0.8mm Ceramic substrate

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

30
30

6

1.5
3

500 mW

1.25
150

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

T

f

Cob − 11 −

30
30

270 − 680

Rev.A 1/2

zExternal dimensions (Unit : mm)

0.4

0.16

Abbreviated symbol : X06

zEquivalent circuit

Unit

V
V
V
A

∗1

A

∗2
∗3

W

(1) (2) (3)

°C
°C

−

V
V

V
nA VCB=30V
nA VEB=6V

− V

MHz

pF

−−

−−

6

−−

−−

−−

− 140

300

−

100
100
350 mV

2.8

1.6

)

1

(

)

2

(
)

3

(

(6)(5)(4)

2.9

0.85

Each lead has same dimensions

(4)(5)(6)

I

C

=10µA
IC=1mA
I

E

=10µA

IC=1A, IB=50mA

CE

=2V, IC=100mA
VCE=2V, IE=−100mA, f=100MHz
V

CB

=10V, IE=0A, f=1MHz

∗

∗

QSX6

Transistors

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QSX6

zElectrical characteristic curves

1000

Ta=100°C

FE

Ta=25°C

Ta=−40°C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

1

VCE=2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Fig.4 Grounded emitter propagation

characteristics

1000

100

Cib

Ta=25°C

Ta=−40°C

VCE=2V
Pulsed

C

(A)

BE

Ta=25°C

I

C

=

0A

f=1MHz

Taping

TR

3000

10

(V)

(V)

CE (sat)

BE (sat)

1

0.1

0.01

0.001 0.01 0.1 101

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

Fig.2 Collector-emitter saturation voltage

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

(V)

IC/IB=20/1

IC/IB=20

Pulsed

Ta=−40°C

Pulsed

Ta=25°C

C

(A)

Ta=25°C

CE

=2V

V
f=100MHz

E

(A)

Ta=−40°C

V

V

Ta=25°C

BE(sat)

Ta=100°C

Ta=100°C

CE(sat)

COLLECTOR CURRENT : I

base-emitter saturation voltage
vs. collector current

EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

1

Ta=25°C

(V)

Pulsed

CE(sat)

0.1

IC/IB=50/1

IC/IB=20/1

0.01

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

IC/IB=10/1

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tstg

100

10

SWITCHING TIME : (ns)

tr

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.6 Switching time

C

(A)

Ta=25°C

VCE=5V
f=100MHz

tf

tdon

C

(A)

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Cob

1 10 1000.1

EB

V)

(

CB

V)

(

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2