ROHM QSX4 Technical data

QSX4

Transistors

Low frequency amplifier

QSX4

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

At lc=1.5A / l

: max. 370mV

CE(sat)

=75mA

B

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emiter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperautre

∗1 Single pluse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended Land Pattern
∗3 Mounted on a 25mm×25mm×

t

0.8mm ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltae
Collector-emitter breakdown voltae BV
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Rev.A 1/2

zExternal dimensions (Unit : mm)

)

1

(

)

2

(

0.4

)

3

(

0.16

ROHM : TSMT6

QSX4

Abbreviated symbol : X04

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

Limits

30
30

6

C

2
4

C

0.5

1.25 W

150

−55 to +150

CBO

BV

CEO
EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

f

T

Cob − 20 −

Unit

V
V
V
A
A

W

°C
°C

30
30

6

−−

−−

− 180

270 − 680

−

2.8

1.6

(6)(5)(4)

0.85

Each lead has same dimensions

∗1

∗2
∗3

−−

−−

−−

100
100
370 mV

280

2.9

zEquivalent circuit

QSX4

(1) (2) (3)

V

I

C

=10µA

V

I

C

=1mA

V

I

E

=10µA
nA VCB=30V
nA VEB=6V

IC=1.5A, IB=75mA

CE

− V

MHz

−

pF

=2V, IC=200mA
VCE=2V, IE=−200mA, f=100MHz
V

CB

=10V, IE=0A, f=1MHz

(4)(5)(6)

∗

∗

Transistors

zPackaging specifications

Package

Type

QSX4

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

Code
Basic ordering unit (Pieces)

VCE=−2V

Ta=125 C

Ta=25 C

Ta= −25 C

Pulsed

Taping

TR

3000

10

(V)

IC/IB=20/1

Pulsed

CE(sat)

1

0.1

QSX4

Ta= −25 C

Ta=25 C

Ta=125 C

10

(V)

BE(sat)

Ta= −25 C

Ta=25 C

1

Ta=125 C

IC/IB=20/1
Pulsed

10

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain
vs. collector current

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current

10

VCE=−2V
Pulsed

(A)

C

1

0.1

0.01

Ta=125 C

Ta=25 C

Ta= −25 C

COLLECTOR CURRENT : I

0.001

01.4

0.2

0.6 0.8

0.4

1.2

1

BASE TO EMITTER CURRENT : VBE (V)

Fig.4 Grounded emitter propagation
characteristics

1000

100

TRANSITION FREQUENCY : fT (MHz)

10

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product
vs. emitter current

0.1

BASE SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

10

COLLECTOR CURRENT : IC (A)

Fig.3 Base-emitter saturation voltage
vs. collector current

Ta=25 C
VCE=−2V
f= 100MHz

1000

Cob

100

Cib

10

0.001 0.01 0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

IC=0A
f=1MHz

Ta=25 C

CB

(V)

Rev.A 2/2