ROHM QSX3 Technical data

Transistors

Low frequency amplifier

QSX3

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

at lc=1.5A / l

250mV

CE(sat)

=30mA

B

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

V
V
V

I
P

Junction temperature
Range of storage temperature

∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm

×

25mm

×

Tstg

t

0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage
DC current gain

Transition frequency

Collector output capacitance

∗ Pulse

zExternal dimensions (Unit : mm)

(4)

0.4

(5)

(6)

0.16

Each lead has same dimensions

ROHM : TSMT6 Abbreviated symbol : X03

Unit

V
V
V
A

∗1

A

∗2
∗3

W

°C
°C

15
12

6

−−

−−

− 120

270 − 680

−

CBO
CEO
EBO

I

C

CP

Tj

C

Limits

30
30

6
5
8

500 mW

1.25
150

−55 to +150

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

T

f

Cob − 20 −

2.8

1.6

(3)

(2)

2.9

(1)

1pin mark

0.85

−−

−−

−−

100
100
250 mV

360

zEquivalent circuit

MHz

−

(4)(5)(6)

(1) (2) (3)

V

I

C

=10µA

V

I

C

=1mA

V

IE=10µA
nA VCB=15V
nA VEB=6V

IC=1.5A, IB=30mA

CE

− V

pF

=2V, IC=500mA
VCE=2V, IE=−500mA, f=100MHz
V

CB

=10V, IE=0A, f=1MHz

QSX3

∗

∗

Rev.A 1/2

Transistors

zPackaging specifications

package

Type

QSX3

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

Code
Basic ordering unit (pieces)

VCE=2V

Ta=100 C

Ta=25 C

Ta=40 C

0.001 0.01 0.1 1 10

Pulsed

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain
vs. collector current

Taping

TR

3000

10

IC/IB=20/1
Pulsed

(V)

CE(sat)

1

Ta=100 C

0.1

COLLECTOR TO EMITTER

SATURATION VOLTAGE : V

0.01

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage
vs. collector current

Ta=25 C

Ta=−40 C

10

(V)

BE(sat)

IC/IB=50/1

1

IC/IB=20/1

BASE SATURATION VOLTAGE : V

0.1

10

0.001 0.01 0.1 1 10

IC/IB=10/1

COLLECTOR CURRENT : IC (A)

Fig.3 Base-emitter saturation voltage
vs.collector current

QSX3

Ta=25 C
Pulsed

10

(A)

C

1

0.1

0.01

Ta=100 C

Ta=25 C

Ta=−40 C

COLLECTOR CURRENT :I

0.001

0.1 1 10

BASE TO EMITTER CURRENT : VBE (V)

Fig.4 Grounded emitter propagation
characteristics

VCE=2V
Pulsed

1000

100

TRANSITION FREQUENCY : fT (MHz)

10

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product

vs. emitter current

Ta=25 C
VCE=2V
f=100MHz

1000

(V)

BE(sat)

100

COLLECTOR TO EMITTER

SATURATION VOLTAGE : V

10

0.001 0.01 0.1 1 10 100

EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V

Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

IC=0A
f=1MHz
Ta=

25 C

Cib

Cob

CB

(V)

Rev.A 2/2