ROHM QSX2 Schematic [ru]
QSX2
Transistors
General purpose amplification (30V, 5A)
QSX2
zApplica tion
Low frequency amplifier
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
V
CE (sat) 250mV
at I
C = 2A / IB = 40mA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm
×
25mm
V
V
V
Tstg
t
×
0.8mm Ceramic substrate
CBO
CEO
EBO
I
C
I
CP
P
C
Tj
Limits
30
30
6
5
8
500 mW
1.25
150
−55 to +150
Unit
W
°C
°C
V
V
V
A
∗1
A
∗2
∗3
zExternal dimensions (Unit : mm)
2.8
1.6
)
1
(
(6)(5)(4)
Each lead has same dimensions
ROHM : TSMT6
)
2
(
0.4
)
3
(
0.16
Abbreviated symbol : X02
zEquivalent Circuit
6pin 5pin 4pin
1pin 2pin 3pin
2.9
0.85
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗Pulsed
BV
BV
BV
I
I
CE (sat)
V
Cob
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
30
−−
30
−−
6
−−
−−
−−
110 250 mV
−
270
−
200
−
60
−
100 nA
100 nA
680
MHz
−
pF
−
V
I
C
=10µA
V
I
C
=1mA
V
IE=10µA
VCB=30V
VEB=6V
IC / IB=2A/40mA
− V
CE
/ IC=2V / 500mA
VCE=2V, IE= −500mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
∗
∗
Rev.B 1/2
Transistors
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QSX2
zElectrical characteristic curves
1000
FE
100
Ta=125°C
Ta=25°C
Ta= −40°C
VCE=2V
Pulsed
Taping
TR
3000
0.1
(V)
CE (sat)
1
IC / IB=20 / 1
Pulsed
Ta=125°C
Ta=25°C
10
(V)
CE (sat)
IC / IB=50 / 1
Pulsed
1
Ta=125°C
Ta=25°C
Ta= −40°C
QSX2
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
10
IC / IB=20 / 1
(V)
Pulsed
BE (sat)
Ta= −40°C
Ta=25°C
1
0.1
0.001 0.01 0.1 1 10
BASE SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Fig.4
Base-emitter saturation voltage
Ta=125°C
vs. collector current
10000
I
C
=
0A
f
=
1MHz
Ta=25°C
0.01
COLLECTOR SATURATION
VOLTAGE : V
0.001
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.2
Collector-emitter saturation voltage
Ta= −40°C
vs. collector current
10
(A)
Ta=125°C
C
Ta=25°C
1
Ta= −40°C
0.1
0.01
COLLECTOR CURRENT : I
0.001
0110
BASE TO EMITTER CURRENT : V
VCE=2V
Pulsed
(V)
BE
Fig.5 Grounded emitter propagation
characteristics
0.1
COLLECTOR SATURATION
VOLTAGE : V
0.01
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
Fig.3
Collector-emitter saturation voltage
C
(A)
vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1 10
EMITTER CURRENT : I
Fig.6 Gain bandwidth product
vs. emitter current
VCE=2V
Ta=25°C
f=100MHz
(A)
E
1000
Cib
100
Cob
EMITTER INPUT CAPACITANCE : Cib (pF)
10
0.001 0.01 0.1 1 10 100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B 2/2
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