ROHM QSX1 Technical data

QSX1

Transistors

General purpose amplification (15V, 6A)

QSX1

zApplica tion

Low frequency amplifier

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) 200mV

C = 3A / IB = 60mA

at I

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm

Parameter Symbol

×

25mm

×

V
V
V

Tstg

t

0.8mm Ceramic substrate

I
P

CBO
CEO
EBO

I

C

CP

Tj

C

Limits

15
12

6
6

10

500 mW

1.25
150

−55 to +150

Unit

V
V
V
A
A

W

°C
°C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

BV
BV
BV

V

CBO

CEO

EBO

CBO

I
I

EBO

CE (sat)

h

FE

f

T

Cob

15

−−

12

−−

6

−−

−−

−−

80 200 mV

−

270

−

250

−

80

−

Rev.A 1/2

zExternal dimensions (Unit : mm)

0.4

0.16

ROHM : TSMT6

Abbreviated symbol : X01

zEquivalent Circuit

6pin 5pin 4pin

∗1

∗2
∗3

1pin 2pin 3pin

V

I

C

=10µA

V

I

C

=1mA

V

IE=10µA
100 nA
100 nA

680

−

−

VCB=15V

VEB=6V

IC/IB=3A/60mA

− VCE/IC=2V/500mA

MHz

VCE=2V, IE= −500mA, f=100MHz

pF

VCB=10V, IE=0A, f=1MHz

2.8

1.6

)

1

(

)

2

(
)

3

(

(6)(5)(4)

Each lead has same dimensions

2.9

0.85

∗

∗

QSX1

Transistors

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QSX1

zElectrical characteristic curves

1000

FE

Ta=125°C

Ta=25°C

Ta= −40°C

VCE=2V
Pulsed

Taping

TR

3000

0.1

(V)

CE (sat)

1

IC/IB=20/1
Pulsed

Ta=125°C
Ta=25°C
Ta= −40°C

1

0.1

(V)

CE (sat)

IC/IB=50/1
Pulsed

Ta=125°C
Ta=25°C
Ta= −40°C

DC CURRENT GAIN : h

100

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain
vs. collector current

10

IC/IB=20/1

(V)

Pulsed

BE (sat)

Ta= −40°C
Ta=25°C

1

0.1

0.001 0.01 0.1 1 10

BASE SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

Ta=125°C

Fig.4 Base-emitter saturation voltage

vs. collector current

1000

(MHz)

T

VCE=2V
Ta=25°C
f=100MHz

0.01

COLLECTOR SATURATION

VOLTAGE : V

0.001

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.2

Collector-emitter saturation voltage

vs. collector current

10

(A)

C

Ta=125°C
Ta=25°C

Ta= −40°C

1

COLLECTOR CURRENT : I

0.1
0110

BASE TO EMITTER CURRENT : V

Fig.5 Grounded emitter propagation

characteristics

VCE=2V
Pulsed

0.01

COLLECTOR SATURATION

VOLTAGE : V

0.001

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : I

Fig.3

Collector-emitter saturation voltage

vs. collector current

10000

1000

Cib

Cob

100

EMITTER INPUT CAPACITANCE : Cib (pF)

10

0.001 0.01 0.1 1 10 100

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

(V)

BE

EMITTER TO BASE VOLTAGE : VEB (V)

COLLECTOR TO BASE VOLTAGE : V

Fig.6 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

C

(A)

I

C

=

0A

f

=

1MHz

Ta=25°C

CB

(V)

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

EMITTER CURRENT : I

(A)

E

Fig.7 Gain bandwidth product

vs. emitter current

Rev.A 2/2