Page 1
QST9
Transistors
General purpose amplification (−30V, −1A)
QST9
zApplica tion
Low frequency amplifier
Driver
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
V
CE(sat) : max. −350mV
At I
C = −500mA / IB = −25mA
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
∗2
∗3
Parameter Symbol
Single pulse, PW=1ms
Each Terminal Mounted on a Recommended
Mounted on a 25mm
t
×
25mm
×
0.8mm ceramic substrate
CBO
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
Limits
−30
−30
500
1.25 W/TOTAL
0.9 W/ELEMENT
150
−55 to+150
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Unit
V
−6
−1
−2
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
EBO
I
CE(sat)
FE
h
f
T
V
V
A
A
mW/TOTAL
°C
°C
−30
−30
−6
270 − 680
Cob − 7 −
zExternal dimensions (Unit : mm)
0.4
0.16
ROHM : TSMT6
Abbreviated symbol : T09
zEquivalent circuit
∗1
∗2
∗3
∗3
(1) (2) (3)
−
V
V
V
nA VCB=−30V
nA VEB=−6V
− V
MHz
pF
−−
−−
−−
−−
−−
−−150
320
−
−100
−100
−350 mV
2.8
1.6
)
1
(
)
2
(
)
3
(
(6)(5)(4)
2.9
0.85
Each lead has same dimensions
(4)(5)(6)
C
=−10µA
I
C
=−1mA
I
E
=−10µA
I
IC=−500mA, IB=−25mA
CE
=−2V, IC=−100mA
VCE=−2V, IE=100mA, f=100MHz
V
CB
=−10V, IE=0A, f=1MHz
∗
∗
Rev.A 1/2
Page 2
QST9
Transistors
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QST9
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
Ta=100°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
1
VCE=−2V
Pulsed
(A)
C
COLLECTOR CURRENT : I
0.001
Ta=100°C
0.1
0.01
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Fig.4 Grounded emitter propagation
characteristics
100
Cob
Ta=25°C
Ta=−40°C
Cib
VCE=−2V
Pulsed
C
(A)
BE
(V)
Ta=25°C
I
C
=
0A
f=1MHz
Taping
TR
3000
10
(V)
IC/IB=20/1
Pulsed
(V)
CE (sat)
BE (sat)
VBE(sat)
1
0.1
Ta=100°C
Ta=−40°C
VCE(sat)
0.01
0.001 0.01 0.1 1
BASE SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Ta=25°C
Ta=−40°C
Ta=25°C
Ta=100°C
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1
EMITTER CURRENT : I
Fig.5 Gain bandwidth product
vs. emitter current
C
(A)
Ta=25°C
CE
=−2V
V
f=100MHz
E
(A)
10
Ta=25°C
(V)
Pulsed
CE(sat)
1
0.1
0.01
0.001
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
IC/IB=20/1
IC/IB=50/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
tstg
100
tr
10
SWITCHING TIME : (ns)
1
0.01 0.1 1
COLLECTOR CURRENT : I
Fig.6 Switching time
IC/IB=10/1
C
Ta=25°C
VCE=−5V
C/IB=20/1
I
tf
C
(A)
tdon
(A)
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
1 10 1000.1
EB
V)
(
CB
V)
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A 2/2
Page 3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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