ROHM QST9 Technical data

QST9

Transistors

General purpose amplification (−30V, −1A)

QST9

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) : max. −350mV

At I

C = −500mA / IB = −25mA

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗1
∗2

∗3

Parameter Symbol

Single pulse, PW=1ms
Each Terminal Mounted on a Recommended

Mounted on a 25mm

t

×

25mm

×

0.8mm ceramic substrate

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

−30

−30

500

1.25 W/TOTAL

0.9 W/ELEMENT

150

−55 to+150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Unit

V

−6

−1

−2

BV
BV
BV

V

CBO
CEO
EBO

I

CBO
EBO

I

CE(sat)

FE

h

f

T

V
V
A
A

mW/TOTAL

°C
°C

−30

−30

−6

270 − 680

Cob − 7 −

zExternal dimensions (Unit : mm)

0.4

0.16

ROHM : TSMT6

Abbreviated symbol : T09

zEquivalent circuit

∗1

∗2
∗3
∗3

(1) (2) (3)

−

V
V

V
nA VCB=−30V
nA VEB=−6V

− V

MHz

pF

−−

−−

−−

−−

−−

−−150

320

−

−100

−100

−350 mV

2.8

1.6

)

1

(

)

2

(
)

3

(

(6)(5)(4)

2.9

0.85

Each lead has same dimensions

(4)(5)(6)

C

=−10µA

I

C

=−1mA

I

E

=−10µA

I

IC=−500mA, IB=−25mA

CE

=−2V, IC=−100mA
VCE=−2V, IE=100mA, f=100MHz
V

CB

=−10V, IE=0A, f=1MHz

∗

∗

Rev.A 1/2

QST9

Transistors

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QST9

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

1

VCE=−2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Fig.4 Grounded emitter propagation

characteristics

100

Cob

Ta=25°C

Ta=−40°C

Cib

VCE=−2V
Pulsed

C

(A)

BE

(V)

Ta=25°C

I

C

=

0A

f=1MHz

Taping

TR

3000

10

(V)

IC/IB=20/1
Pulsed

(V)

CE (sat)

BE (sat)

VBE(sat)

1

0.1

Ta=100°C
Ta=−40°C

VCE(sat)

0.01

0.001 0.01 0.1 1

BASE SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

COLLECTOR SATURATION VOLTAGE : V

Ta=25°C

Ta=−40°C

Ta=25°C

Ta=100°C

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1
EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

C

(A)

Ta=25°C

CE

=−2V

V
f=100MHz

E

(A)

10

Ta=25°C

(V)

Pulsed

CE(sat)

1

0.1

0.01

0.001

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

IC/IB=20/1

IC/IB=50/1

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tstg

100

tr

10

SWITCHING TIME : (ns)

1

0.01 0.1 1
COLLECTOR CURRENT : I

Fig.6 Switching time

IC/IB=10/1

C

Ta=25°C

VCE=−5V

C/IB=20/1

I

tf

C

(A)

tdon

(A)

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

1 10 1000.1

EB

V)

(

CB

V)

(

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2