ROHM QST8 Technical data

QST8

Transistors

General purpose amplification (−12V, −1.5A)

QST8

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE (sat) : max.

C =

At I

−

200mV

−

500mA / IB = −25mA

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm

Parameter Symbol

×

25mm

V
V
V

Tstg

t

×

0.8mm ceramic substrate

I

P

CBO
CEO
EBO

I

CP

Tj

C

C

Limits

−15

−12

−6

−1.5

−3

500

1.25 W/TOTAL

0.9 W/ELEMENT

150

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

BV
BV
BV

Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage

V

DC current gain

Transition frequency

Corrector output capacitance

∗Pulsed

Unit

V
V
V
A
A

mW/TOTAL

°C
°C

CBO
CEO
EBO

CBO

I
I

EBO

CE(sat)

h

FE

f

T

−15

−12

−6

−−

−−

−−85

270 − 680

−

Cob − 12 −

zExternal dimensions (Unit : mm)

2.8

1.6

(1)

0.4
(2)

(3)

0.16

Each lead has same dimensions

ROHM : TSMT6

Abbreviated symbol : T08

zEquivalent circuit

(5)(6) (4)

1

∗1

∗2
∗3
∗3

Tr

(1) (2) (3)

Tr

2

V

C= −10µA

−−

−−

−−

−100

−100

−200 mV

400

−

I

V

C= −1mA

I

V

I

E= −10µA

CB= −15V

V

nA

V

EB= −6V

nA

C= −500mA, IB= −25mA

I
V

CE= −2V, IC= −200mA

−

MHz

CE= −2V, IE=200mA, f=100MHz

V
VCB= −10V, IE=0A, f=1MHz

pF

(6)

2.9

(5)

(4)

0.85

∗

∗

Rev.A 1/2

QST8

Transistors

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QST8

zElectrical characteristic curves

1000

FE

Ta=100°C

Ta=25°C

100

Ta= −40°C

DC CURRENT GAIN : h

VCE= −2V
Pulsed

Taping

TR

3000

(V)

BE (sat)

(V)

CE (sat)

0.01

10

1

0.1

IC / IB=20/1
Pulsed

V

BE (sat)

V

CE (sat)

Ta=100°C

Ta=25°C

Ta= −40°C

Ta= −40°C
Ta=25°C
Ta=100°C

−1

(V)

Ta=25°C
Pulsed

CE(sat)

IC / IB=50
IC / IB=20

−0.1

IC / IB=10

−0.01

10

−0.001 −0.01 −0.1 −1 −10

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain
vs. collector current

−10

VCE=2V
Pulsed

(A)

C

Ta=100°C

−1

Ta=25°C

Ta= −40°C

−0.1

−0.01

COLLECTOR CURRENT : I

−0.001
0 −0.5 −1.0 −1.5

BASE TO EMITTER CURRENT : V

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

10

I

E

=0A
f=1MHz
Ta=25°C

0.001

0.001 0.01 0.1 1 10

BASE SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

COLLECTOR SATURATION VOLTAGE : V

Fig.2

Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.001 0.01 0.1 1 10

(V)

BE

EMITTER CURRENT : I

Ta=25°C

CE= −2V

V

Pulsed

(A)

E

Fig.5 Gain bandwidth product

−0.001

−0.001 −0.01 −0.1 −1 −10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.3

Collector-emitter saturation voltage
vs. collector current

1000

100

10

SWITCHING TIME : (ns)

1

−0.001 −0.01 −0.1 −1 −10

COLLECTOR CURRENT : IC (A)

IC=20 IB1= −20 IB2
Ta=25°C
Pulsed

Fig.6 Switching time

C

(A)

tstg

tf

tdon

tr

vs. emitter current

EMITTER INPUT CAPACITANCE : Cib (pF)

1

−0.1 −1 −10 −100

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER TO BASE VOLTAGE : VEB (V)

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2