ROHM QST7 Technical data

Transistors

Low frequency amplifier

QST7

QST7

!!!!Application

!!!!External dimensions (Units : mm)

Low frequency amplifier
Driver

)

1

(

)

!!!!Features

1) A collector current is large.

2) V

≤ −370mV

CE(sat)

At I

=− 1A / IB = −50mA

C

2

(

0.4

)

3

(

0.16

Abbreviated symbol : T07

!!!!Equivalent circuit
!!!!

Absolute maximum ratings

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1

Single pulse, PW=1ms

∗2

Each Terminal Mounted on a Recommended

(Ta=25°C)

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

Limits

−30

−30

−6

−1.5

−3

500
150

−55~+150

Unit

V
V
V
A
A

mW

°C
°C

∗1

∗2

(1) (2) (3)

2.8

1.6

(6)(5)(4)

2.9

0.85

Each lead has same dimensions

(4)(5)(6)

!!!!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

BV
BV
BV

I
I

V

CE(sat)

h

CBO
EBO

f

CBO
CEO
EBO

FE
T

−30

−30

−6

−−

−−

−−

−−

−−

−−200

270 − 680

280

−

Cob − 13 −

V
V
V

−100

−100

nA VCB=−30V
nA VEB=−6V

−370 mV

− V

MHz

−

pF

I

C

=−10µA

I

C

=−1mA

I

E

=−10µA

IC=−1A, IB=−50mA

CE

=−2V, IC=−100mA

∗

VCE=−2V, IE=100mA, f=100MHz

CB

=−10V, IE=0A, f=1MHz

V

∗

1/2

Transistors

!!!!

Packaging specifications

Package

Type

QST7

Code
Basic ordering unit (pieces)

QST7

Taping

TR

3000

!!!!Electrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

1

VCE=−2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Fig.4 Grounded emitter propagation

characteristics

1000

100

Ta=25°C

Ta=−40°C

Cib

VCE=−2V
Pulsed

C

(A)

BE

Ta=25°C

I

f=1MHz

C

1

(V)

(V)

CE (sat)

BE (sat)

V

BE(sat)

0.1

V

CE(sat)

0.01

0.001 0.01 0.1 101

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Ta=−40°C
Ta=25°C
Ta=100°C

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

Ta=100°C
Ta=25°C
Ta=−40°C

IC/IB=20/1
Pulsed

C

(A)

10

Ta=25°C

(V)

Pulsed

CE(sat)

1

0.1

IC/IB=50/1

IC/IB=20/1

0.01

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

IC/IB=10/1

Fig.3 Collector-emitter saturation voltage

vs. collector current

C

(A)

vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

(V)

EMITTER CURRENT : I

Ta=25°C

CE

=−2V

V
f=100MHz

E

(A)

Fig.5 Gain bandwidth product

1000

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.6 Switching time

tstg

Ta=25°C

VCE=−5V
I

C/IB

=20/1

tf

tdon

tr

C

(A)

vs. emitter current

=

0A

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

1 10 1000.1

Cob

EB

(

V)

CB

(

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

V)

2/2