ROHM QST6 Technical data

QST6

Transistors

Low frequency amplifier

QST6

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

CE(sat) : max. −180mV

At I

C= −1A / IB= −50mA

zExternal dimensions (Unit : mm)

2.8

1.6

)

1

(

)

2

(

0.4

)

3

(

0.16

Abbreviated symbol : T06

(6)(5)(4)

Each lead has same dimensions

2.9

0.85

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation

Junction temperature
Range of storage temperature

Single pulse, PW=1ms

∗1
∗2

Each Termminal Mounted on a Recommended

∗3

Mounted on a 25mm

Parameter Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

t

×

25mm

×

0.8mm ceramic substrate

−55 to +150

Limits

−15

−12

−6

−2

−4

500

1.25 W

150

Unit

mW

°C
°C

zEquivalent circuit

V
V
V
A

∗1

A

∗2
∗3

(4)(5)(6)

(1) (2) (3)

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

f

T

Cob − 15 −

−15

−12

−6

−−

−−

−−120

−−

−−

−−

−100

−100

−180 mV

270 − 680

360

−

−

V

IC=−10µA

V

I

C

=−1mA

V

I

E

=−10µA
nA VCB=−15V
nA VEB=−6V

IC=−1A, IB=−50mA

− V

CE

=−2V, IC=−200mA

MHz

VCE=−2V, IE=200mA, f=100MHz
V

CB

pF

=−10V, IE=0A, f=1MHz

∗

∗

Rev.A 1/2

QST6

Transistors

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QST6

zElectrical characteristic curves

1000

Ta=100°C

FE

100

DC CURRENT GAIN : h

CE

=−2V

V

PULSED

10

−0.001 −0.01 −0.1

COLLECTOR CURRENT : IC (

Fig1. DC current gain
vs.collector current

−10

(A)

C

−1

Ta=100°C

25°C

−40°C

−0.1

−0.01

CE

=−2V

V

COLLECTOR CURRENT : I

Ta=25°C

PULSED

−0.001
0 −0.5 −1

BASE TO EMITTER CURRENT : VBE (V

Fig.4 Grounded emitter propagation characteristics

1000

100

−1 −10

Cib

25°C

−40°C

A)

Ta=25°C

I

E

=

f=1MHz

0A

)

Taping

TR

3000

10

V)

(

V)

(

CE(sat)

BE(sat)

1

0.1

0.01

BASE SATURATION VOLTAGE : V

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : IC (

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

vs.collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.001 0.01 0.1

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product

vs.emitter current

Ta=100°C

Ta=−40°C

Ta=25°C

VBE(sat)

VCE(sat)

C/IB

=20

I

PULSED

A)

Ta=25°C
V
PULSED

110

CE

=−2V

−1

V)

(

CE(sat)

−0.1

IC/IB=50

20
10

−0.01

−0.001

COLLECTOR SATURATION VOLTAGE : V

−0.001 −0.01 −0.1 −1 −10

COLLECTOR CURRENT : IC (

Fig.3 Collector-emitter saturation voltage

vs.collector current

1000

100

10

SWITCHING TIME : (ns)

Ta=25°C

PULSED
I

C

=20 IB1=−20

1

−0.001 −0.01 −0.1 −1

IB=2

COLLECTOR CURRENT : I

Ta=25°C

Fig.6 Switching time

PULSED

A)

tstg

tr

C

(A)

tdon

tf

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Fig7. Collector output capacitance vs.collector-base voltage

Emitter input capacitance vs.emitter-base voltage

−1 −10 −100−0.1

EMITTER TO BASE VOLTAGE : V

COLLECTOR TO BASE VOLTAGE : V

Cob

EB

(

V)

CB

(

V)

Rev.A 2/2