ROHM QST5 Technical data
Transistors
Low frequency amplifier
QST5
zApplica tion
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
At lc= −1.5A / l
: max. −370mV
CE(sat)
= −75mA
B
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
∗2
∗3
Parameter
Single pulse, Pw=1ms
Each terminal mounted on a recommended
Mounted on a 25mm
×
25mm
Symbol
CBO
V
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
t
×
0.8mm ceramic substrate
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff curent
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
Unit
V
V
V
A
∗1
A
∗2
mW
∗3
°C
°C
−30
−30
−6
−−
−−
−−180
270 − 680
−
Limits
−30
−30
−6
−2
−4
500
1.25 W
150
BV
BV
BV
I
I
V
CE(sat)
Cob − 20 −
zExternal dimensions (Unit : mm)
zEquivalent circuit
−−
−−
−−
280
2.8
1.6
(4)
0.4
(5)
(6)
0.16
Each lead has same dimensions
ROHM : TSMT6 Abbreviated symbol : T05
(1) (2) (3)
V
V
V
−100
−100
nA VCB= −30V
nA VEB= −6V
−370 mV
(3)
(2)
(1)
1pin mark
(4)(5)(6)
I
C
= −10µA
I
C
= −1mA
E
= −10µA
I
IC= −1.5A, IB= −75mA
− VCE= −2V, IC= −200mA
MHz
−
VCE= −2V, IE=200mA, f=100MHz
V
CB
pF
= −10V, IE=0A, f=1MHz
QST5
2.9
0.85
Rev.B 1/2
Transistors
zPackaging specifications
package
Type
QST5
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
10
VBE=−2V
Pulsed
(A)
C
1
0.1
COLLECTOR CURRENT :I
0.01
0.1 1 10
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
1000
(A)
C
100
Code
Basic ordering unit(pieces)
Ta=100 C
Ta=25 C
Ta=−40 C
COLLECTOR CURRENT : IC (A)
Fig.1 DV current gain
vs. collector current
Ta=100 C
Cib
Cob
Ta=25 C
Ta=−40 C
VCE=−2V
Pulsed
IC=0A
f=1MHz
Ta=25 C
Taping
TR
3000
10
(V)
IC/IB=20/1
Pulsed
CE(sat)
1
0.1
0.01
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Ta=−40 C
Ta=25 C
Ta=100 C
Fig.2 Collector-emitter saturation voltage
vs. collector current
1000
100
TRANSITION FREQUENCY : fT (MHz)
10
0.01 0.1 1 10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter curent
Ta=25 C
CE
=−2V
V
f=100MHz
10
(V)
BE(sat)
1
IC/IB=50/1
IC/IB=20/1
0.1
BASE SATURATION VOLTAGE : V
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.3 Base-emitter saturation voltage
vs. collector current
10000
1000
100
10
SWITCHINGTIME : (ns)
1
0.01
0.1 1
COLLECTOR CURRENT : IC(A)
Fig.6 Switching time
IC/IB=10/1
tstg
QST5
Ta=25 C
Pulsed
25 C
Ta=
VCE=−2V
I
C/IB
=20/1
Pulsed
tf
tdon
tr
10
10
COLLECTOR CURRENT :I
1
0.001 0.1 1000.01 1 10
EMITTER TO BASE VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
CB
(V)
Rev.B 2/2
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