ROHM QST3 Technical data

QST3

Transistors

General purpose amplification (−30V, −5A)

QST3

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.

CE(sat)

V
At I

−

250mV

−

C =

2A / IB = −40mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

1 Single pulse, Pw=1ms

∗

2 Each Terminal Mounted on a Recommended

∗

3 Mounted on a 25mm×25mm

∗

t

×

0.8mm Ceramic substrate

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

−30

−30

−6

−5

−8

500

1.25

150

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

Pulsed

∗

CBO

BV

CEO

BV

EBO

BV

CBO

I
I

EBO

V

CE(sat)

FE

h

T

f

Cob − 60 −

−30

−30

−6

−−

−−

−−170

270 − 680

−

Rev.B 1/2

zExternal dimensions (Unit : mm)

0.4

0.16

ROHM : TSMT6

Abbreviated symbol : T03

zEquivalent circuit

Unit

V

6pin 5pin 4pin

V
V
A

1

A

∗

2

mW

∗

3

W

∗

1pin 2pin 3pin

°C
°C

MHz

−

V
V

V
nA VCB= −30V
nA VEB= −6V

− V

pF

−−

−−

−−

−100

−100

−250 mV

200

2.8

1.6

)

1

(

)

2

(
)

3

(

(6)(5)(4)

2.9

0.85

Each lead has same dimensions

C

= −10µA

I

C

= −1mA

I

E

= −10µA

I

IC= −2A, IB= −40mA

CE

= −2V, IC= −500mA
VCE= −2V, IE=500mA, f=100MHz
V

CB

= −10V, IE=0A, f=1MHz

∗

∗

QST3

Transistors

zPackaging specifications

Type

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

QST3

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

VCE=2V
Pulsed

10

0.001 0.01 0.1 1 10

Ta=25°C
Ta=125°C

Ta= −40°C

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain
vs. collector current

10

VCE=2V
Pulsed

(A)

C

1

Ta=25°C

0.1

0.01

COLLECTOR CURRENT : I

0.001
0110

BASE TO EMITTER CURRENT : V

Ta=125°C

Ta= −40°C

Fig.4 Grounded emitter propagation

characteristics

(V)

BE

10

(V)

IC/IB=20/1
Pulsed

(V)

CE (sat)

1

VBE(sat)

BE (sat)

0.1

0.01

VCE(sat)

0.001

0.001 0.01 0.1 1 10

BASE SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

COLLECTOR SATURATION VOLTAGE : V

Fig.2

Collector-emitter saturation voltage

Ta= −40°C
Ta=125°C
Ta=25°C

Ta=25°C

Ta= −40°C

Ta=125°C

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

Ta=25°C
V
f=100MHz

E

CE

(A)

= −2V

1

(V)

IC/IB=50/1
Pulsed

CE(sat)

0.1

0.01

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

Fig.3

IC/IB=50/1
IC/IB=20/1
IC/IB=10/1

COLLECTOR CURRENT : I

C

Collector-emitter saturation voltage

vs. collector current

10000

IC/IB=20/1
Pulsed

Cib

1000

Cob

100

EMITTER INPUT CAPACITANCE : Cib (pF)

10

0.001 0.01 0.1 1 10 100

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER TO BASE VOLTAGE : VEB (V)

COLLECTOR TO BASE VOLTAGE : V

I
f=1MHz
Ta=25°C

Fig.6 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

C

(A)

=0A

CB

(V)

Rev.B 2/2