ROHM QST2 Technical data

QST2

Transistors

General purpose amplification (−12V, −3A)

QST2

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.

CE(sat)

V
at I

−

250mV

−

C =

3A / IB = −60mA

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

1 Single pulse, Pw=1ms

∗

2 Each Terminal Mounted on a Recommended

∗

3 Mounted on a 25mm×25mm

∗

Parameter Symbol

t

×

0.8mm Ceramic substrate

V
V
V

Tstg

CBO
CEO
EBO

I

C

I

CP

P

C

Tj

Limits

−15

−12

−6

−6

−10

500

1.25

150

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

BV
BV

BV
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage

V
DC current gain
Transition frequency
Corrector output capacitance

Pulsed

∗

Unit

V
V
V
A

1

∗

A

2

∗

mW

3

∗

W

°C
°C

CBO
CEO
EBO

CBO

I
I

EBO

CE(sat)

FE

h

T

f

Cob − 80 −

−15

−12

−6

−−

−−

−−120

270 − 680

−

zExternal dimensions (Unit : mm)

2.8

1.6

)

1

(

)

2

(

0.4

)

3

(

0.16

ROHM : TSMT6

Abbreviated symbol : T02

Each lead has same dimensions

zEquivalent circuit

6pin 5pin 4pin

1pin 2pin 3pin

V

C

−−

−−

−−

−100

−100

−250 mV

250

−

MHz

= −10µA

I

V

C

= −1mA

I

V

E

= −10µA

I
nA VCB= −15V
nA VEB= −6V

IC= −3A, IB= −60mA

− V

CE

= −2V, IC= −500mA
VCE= −2V, IE=500mA, f=100MHz
V

CB

pF

= −10V, IE=0A, f=1MHz

(6)(5)(4)

2.9

0.85

∗

∗

Rev.B 1/2

QST2

Transistors

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QST2

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

VCE= −2V
Pulsed

10

0.001 0.01 0.1 1 10

10

VCE= −2V
Pulsed

(A)

C

1

Ta=25°C
Ta=125°C

Ta= −40°C

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain
vs. collector current

Ta=125°C

Ta=25°C

Ta= −40°C

Taping

TR

3000

10

(V)

IC/IB=20/1
Pulsed

(V)

CE (sat)

1

V

BE (sat)

BASE SATURATION VOLTAGE : V

BE(sat)

0.1

0.01

V

CE(sat)

0.001

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

COLLECTOR SATURATION VOLTAGE : V

Fig.2

Collector-emitter saturation voltage

Ta= −40°C
Ta=125°C
Ta=25°C

Ta=25°C

Ta= −40°C

Ta=125°C

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

Ta=25°C

CE

V
f=100MHz

= −2V

1

(V)

IC/IB=50/1
Pulsed

CE(sat)

0.1

0.01

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.3

Collector-emitter saturation voltage

IC/IB=50/1
IC/IB=20/1
IC/IB=10/1

vs. collector current

10000

Cib

1000

Cob

100

C

(A)

I

C

=

0A

f=1MHz

COLLECTOR CURRENT : I

0.1
0110

BASE TO EMITTER CURRENT : V

BE

Fig.4 Grounded emitter propagation

characteristics

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

(V)

EMITTER CURRENT : I

(A)

E

Fig.5 Gain bandwidth product

vs. emitter current

EMITTER INPUT CAPACITANCE : Cib (pF)

10

0.001 0.01 0.1 1 10 100

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER TO BASE VOLTAGE : VEB (V)

COLLECTOR TO BASE VOLTAGE : V

CB

Fig.6 Collector output capacitance

vs. collector-base voltage

(V)

Emitter input capacitance
vs. emitter-base voltage

Rev.B 2/2