ROHM QSL11 Schematic [ru]
Transistors
General purpose transistor
(isolated transistor and diode)
QSL1 1
A 2SB1710 and a RB461F are housed independently in a TSMT5 package.
zApplica tions
DC / DC converter
Motor driver
zFeatures
1) Tr : Low V
Di : Low V
CE(sat)
F
2) Small package
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
zEquivalent circuit
(5) (4)
Di2
Tr1
(1)
(3)(2)
zPackaging specifications
Type QSL11
Package
Marking
Code
Basic ordering unit(pieces)
TSMT5
3000
L11
TR
zExternal dimensions (Unit : mm)
QSL11
(1)
0.4
(3) (2)
0.16
0.3 to 0.6
ROHM : TSMT5
Abbreviated symbol : L11
2.8
1.6
(5)
0.95
2.9
1.9
0.95
(4)
0.85
0.7
0 to 0.1
Each lead has same dimensions
QSL11
Rev.A 1/4
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms
∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate
+
+
Di2
Parameter Symbol
Peak reverse voltage
Reverse voltage (DC)
Average rectified forward current
F
orward current surge peak (60HZ, 1∞)
Power dissipation
Junction temperature
Range of storage temperature
∗ Mounted on a 25mm 25mm t0.8mm ceramic substrate
+
+
Tr1&Di2
Symbol
CBO
V
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
V
RM
V
I
I
FSM
P
Tj
Tstg
R
F
D
Limits
−30
−30
−6
−1
−2
0.9
150
−40 to +125
Limits
700
125
−40 to +125
Unit
V
V
V
A
A
W/ ELEMENT
°C
°C
25 V
20
3
0.7
W/ ELEMENT
QSL11
∗1
∗2
Unit
V
mA
A
∗
°C
°C
Parameter Symbol
Total power dissipation
1
∗
Each terminal mounted on a recommended land
∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate
+
P
+
Limits
D
0.5
1.25
zElectrical characteristics (Ta=25°C)
Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Di2
Parameter Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Reverse recovery time
Symbol
V
F
I
R
t
rr
Unit
1
∗
2
∗
−30 −−
−30 −−
−6 −−
−−−100
−−−100
−−150 −350
270
320
−
−
BV
BV
BV
V
CBO
CEO
EBO
CBO
I
EBO
I
CE(sat)
FE
h
f
T
Cob
W/ TOTAL
W/ TOTAL
−
−
−
−−
9
−
7
490450
200
680
−
−
mVnsI
µA
V
I
V
I
V
I
nA
V
nA
V
mV
I
− V
MHz
V
pF
V
F
=700mA
VR=20V
F=IR
=100mA, Irr=0.1I
I
C
=
−10µA
C
=
−1mA
E
=
−10µA
CB
=
−30V
EB
=
−6V
C
=
−500mA, I
CE
=
CE
=
CB
=
B
=
−25mA
−2V, I
C
=
−100mA
−2V, IE=100mA, f=100MHz
−10V, IE=0A, f=1MHz
R
∗
∗
Rev.A 2/4
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