ROHM QSL10 Schematic [ru]

Transistors

General purpose transistor
(isolated transistor and diode)

QSL10

A 2SD2674 and a RB461F are housed independently in a TSMT5 package.

zApplica tions

DC / DC converter
Motor driver

zFeatures

1) Tr : Low V
Di : Low V

CE(sat)
F

2) Small package

zStructure

Silicon epitaxial planar transistor
Schottky barrier diode

zEquivalent circuit

zExternal dimensions (Unit : mm)

QSL10

(1)

0.4

(3) (2)

0.16

0.3 to 0.6

ROHM : TSMT5

Abbreviated symbol : L10

2.8

1.6

(5)

0.95

2.9

1.9

0.95

(4)

0.85

0.7

0 to 0.1

Each lead has same dimensions

QSL10

(5) (4)

Tr1

Di2

(3)(2)(1)

zPackaging specifications

Type QSL10

Package

Marking

Code

Basic ordering unit(pieces)

TSMT5

L10

TR

3000

Rev.A 1/4

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

P

D

Symbol

Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

Pc

Tj

Tstg

Limits

1.25

F

V

I

R

t

rr

V

I

Tstg

0.5

BV
BV
BV

V

RM

V

R

I

F

FSM

P

D

Tj

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

FE

h

f

T

Cob

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse, Pw=1ms

∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate

+

+

Di2

Parameter Symbol

Peak reverse voltage
Reverse voltage (DC)
Average rectified forward current

orward current surge peak (60HZ, 1∞)

F
Power dissipation
Junction temperature
Range of storage temperature

∗ Mounted on a 25mm 25mm t0.8mm ceramic substrate

+

+

Tr1&Di2

Parameter Symbol

Total power disipation

∗1 Each terminal mounted on a recommended land.
∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate.

+

+

zElectrical characteristics (Ta=25°C)
Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Di2

Parameter

Forward voltage
Reverse current
Reverse recovery fime

/

ELEMENT

W

Unit

V
V
V
A
A

°C
°C

∗1
∗2

Limits

15
12

6

1.5
3

0.9

150

−40 to +125

Limits

25
20

700

3

0.7

125

−40 to +125

Unit

V
V

mA

A

W / ELEMENT

°C
°C

∗

Unit

W / ELEMENT
W

/

ELEMENT

1

∗

2

∗

15

−−

12

−−

6

−−

−−

−−

85 200 mV

−

270

−

400

−

12

−

Min. Typ. Max. Unit Conditions

−

− 200

−

−−

9

V
V

V
100 nA
100 nA

680

MHz

−

pF

−

490450

I

C

=10µA

C

=1mA

I

E

=10µA

I
VCB=15V

EB

=6V

V

IC/IB=500mA/25mA

− V

CE/IC

=2V/200mA

VCE=2V, I

E

=

−200mA, f=100MHz

VCB=10V, IE=0A, f=1MHz

F

mVnsI

µA

=700mA

VR=20V

F=IR

=100mA, Irr=0.1I

I

QSL10

∗

∗

R

Rev.A 2/4