ROHM QSH29 Technical data

Transistors

Dual digital transistors

QSH29

zFeatures

In addition to the standard features of digital transistor,
this transisito r has:

1) Low collector saturation voltage, typically
V

CE (sat) =100mV for IC / IB=100mA / 1mA(T yp.)

2) High current gain, minimum

h

FE=500mA for VCE=5V, IC=200mA.

3) Built in Zener diode for protection against surges when
connected to inductive load.

zStructure

NPN silicon epitaxial planar transistor

zApplications

Driver

zPackaging specifications and h

Package

Type

QSH29

Packaging type
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

<<

D Tr1

>> <<

D Tr2

>>

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Pw=10ms 1 Pulse
∗2 Each terminal mounted on a ceramic board

Continuous
Pulsed

FE

TSMT6

Taping

TR

3000

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

D

Tj 150

Tstg

−55 to +150

Limits
60±10
60±10

5

500

1A

1.25

0.9

Unit

V
V
V

mA

W/TOTAL

W/1 ELEMENT

°C
°C

zDimensions (Unit : mm)

TSMT6

Abbreviated symbol : H29

zEquivalent circuit

(6) (5)

Di

DTr1

R

(1) (2) (3)

∗1
∗2
∗2

QSH29

(4)

R

DTr2

Di

R=10kΩ

(1) : Emitter (DTr1)
(2) : Base (DTr1)
(3) : Collector (DTr2)
(4) : Emitter (DTr2)
(5) : Base (DTr2)
(6) : Collector (DTr1)

1/3

Transistor

zElectrical characteristics (T a=25°C)

<<

D Tr1

>> <<

D Tr2

>>

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Emitter-base resistance

BV
BV
BV

V

CEO
CBO
EBO

I

CBO

I

EBO

CE (sat)

h

FE

R

50

−

50

−

5.0

−

−−

300 −

100

−

500

−

7

10

70 V
70 V

− V

0.5 µA
580 µA
300 mV

−−

13 kΩ

=50µA

I

C

I

=50µA

C

I

=720µA

E

V

=40V

CB

=4V

V

EB

=100mA, IB=1mA

I

C

V

=5V, IC=200mA

CE

−

QSH29

2/3

Transistor

z

Electrical characterristic curves

1

(A)

C

0.01

COLLECTOR CURRENT : I

0.001

125˚C

25˚C

−40˚C

0.1

0.1 1 10

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded Emitter Propagation

Characteristics

10

VCE=2V

Ta=25˚C

500

Ta=25˚C

400

(mA)

C

300

200

100

COLLECTOR CURRENT : I

0

012345678910

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

IB=600uA

IB=500uA

IB=400uA

IB=300uA

IB=200uA

IB=100uA

Fig.2 Typical Output Characteristics

10

Ic/Ib=100/1

QSH29

10000

FE

1000

−

40°C

100

10

DC CURRENT GAIN : h

1

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (A)

Fig.3 DC Current Gain vs.

Collector Current

10

25°C
125°C

Ic/Ib=10/1

VCE=5V

1

(V)

CE(sat)

0.1

: V

0.01

COLLECTOR SATURATION VOLTAGE

0.01 0.1 1

Ic/Ib=200/1
Ic/Ib=150/1
Ic/Ib=100/1

COLLECTOR CURRENT : IC (A)

Fig.4 Collector-Emitter Saturation

Voltage vs. Collector Current ( )

10

(A)

C

1

DC (Ta=25˚C)

0.1

0.01

COLLECTOR CURRENT : I

0.001

0.1 1 10010

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

1ms

10ms
100ms

Fig.7 Safe Operating Area

Ta=25˚C
Pulsed

1

(V)

CE(sat)

: V

0.1

COLLECTOR SATURATION VOLTAGE

0.01

0.01 0.1 1

125°C
25°C

−

40°C

COLLECTOR CURRENT : IC (A)

Fig.5 Collector-Emitter Saturation

Voltage vs. Collector Current ( )

−40˚C
25˚C

125˚C

1

(sat) (V)

BE

: V

BASE EMITTER SATURATION VOLTAGE

0.1

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (A)

Fig.6 Base-emitter Saturation

Voltage vs. Collector Current

3/3

Appendix

Notes

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
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and other safety devices), please be sure to consult with our sales representative in advance.
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cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0