ROHM QSH29 Technical data
Transistors
Dual digital transistors
QSH29
zFeatures
In addition to the standard features of digital transistor,
this transisito r has:
1) Low collector saturation voltage, typically
V
CE (sat) =100mV for IC / IB=100mA / 1mA(T yp.)
2) High current gain, minimum
h
FE=500mA for VCE=5V, IC=200mA.
3) Built in Zener diode for protection against surges when
connected to inductive load.
zStructure
NPN silicon epitaxial planar transistor
zApplications
Driver
zPackaging specifications and h
Package
Type
QSH29
Packaging type
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
<<
D Tr1
>> <<
D Tr2
>>
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms 1 Pulse
∗2 Each terminal mounted on a ceramic board
Continuous
Pulsed
FE
TSMT6
Taping
TR
3000
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj 150
Tstg
−55 to +150
Limits
60±10
60±10
5
500
1A
1.25
0.9
Unit
V
V
V
mA
W/TOTAL
W/1 ELEMENT
°C
°C
zDimensions (Unit : mm)
TSMT6
Abbreviated symbol : H29
zEquivalent circuit
(6) (5)
Di
DTr1
R
(1) (2) (3)
∗1
∗2
∗2
QSH29
(4)
R
DTr2
Di
R=10kΩ
(1) : Emitter (DTr1)
(2) : Base (DTr1)
(3) : Collector (DTr2)
(4) : Emitter (DTr2)
(5) : Base (DTr2)
(6) : Collector (DTr1)
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Transistor
zElectrical characteristics (T a=25°C)
<<
D Tr1
>> <<
D Tr2
>>
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Emitter-base resistance
BV
BV
BV
V
CEO
CBO
EBO
I
CBO
I
EBO
CE (sat)
h
FE
R
50
−
50
−
5.0
−
−−
300 −
100
−
500
−
7
10
70 V
70 V
− V
0.5 µA
580 µA
300 mV
−−
13 kΩ
=50µA
I
C
I
=50µA
C
I
=720µA
E
V
=40V
CB
=4V
V
EB
=100mA, IB=1mA
I
C
V
=5V, IC=200mA
CE
−
QSH29
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