ROHM QS8M51 Technical data

4V Drive Nch + Pch MOSFET

QS8M51

 Structure  Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) Low voltage drive (4V drive).

3) Small surface mount package (TSMT8).

 Application

Switching

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : M51

Data Sheet

 Packaging specifications

 Inner circuit

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

QS8M51 

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

Tr1 : N-ch Tr2 : P-ch

*1

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

Unit

100 100 V

20 20 V

2 1.5 A

6 6A

1.0 1.0 A

6 6A

1.5

1.25

W / TOTAL

W / ELEMENT

150

55 to 150

(8) (7)

∗2

∗1

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(6) (5)

∗2

(3) (4)

∗1

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Data Sheet

QS8M51

 Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

GSS

(BR)DSS

DSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

g

ConditionsParameter

--10 AVGS=±20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--1AVDS=100V, VGS=0V

1 - 2.5 V VDS=10V, ID=1mA

- 240 325 I

*

- 250 340 I

260 355 I

*

l 1.9 - - S VDS=10V, ID=2A

m

D

D

D

=2A, VGS=10V

=2A, VGS=4.5V

=2A, VGS=4V

- 290 - pF VDS=25V

- 30 - pF VGS=0V

- 20 - pF f=1MHz

*

- 10 - ns VDD 50V, ID=1A

*

- 10 - ns VGS=10V

*

- 30 - ns RL=50 RG=10

*

-15-ns

- 4.7 - nC VDD 50V, ID=2A

*

- 1.2 - nC VGS=5V

*

- 1.8 - nC

*

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=2A, VGS=0V

2/10

2011.07 - Rev.A

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Data Sheet

QS8M51

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

--10 AVGS=±20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--1 AVDS=100V, VGS=0V

1-2.5 V VDS=10V, ID=1mA

- 350 470 I

*

- 380 510 I

400 540 I

*

l 1.5 - - S VDS=10V, ID=1.5A

=1.5A, VGS=10V

D

m

=0.75A, VGS=4.5V

D

=0.75A, VGS=4V

D

- 950 - pF VDS=25V

- 45 - pF VGS=0V

- 20 - pF f=1MHz

- 10 - ns VDD 50V, ID=0.75A

*

- 15 - ns VGS=10V

*

- 60 - ns RL=66 RG=10

*

-10-ns

*

- 17 - nC VDD 50V, ID=1.5A

*

- 4.5 - nC VGS=5V

*

-5-nC

*

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

--1.2 V Is=0.75A, VGS=0V

3/10

2011.07 - Rev.A

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Data Sheet

QS8M51

Electrical characteristic curves (Ta=25C)

〈Tr.1(Nch)〉

0

0.5

1

1.5

2

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.0V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=2.5V

Ta=25℃

Pulsed

0

0.5

1

1.5

2

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.8V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.5V

VGS=2.0V

Ta=25℃

Pulsed

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V

VGS=10V

Ta=25℃

Pulsed

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= -25°C

4/10

2011.07 - Rev.A