ROHM QS8M12 Technical data

4V Drive Nch + Pch MOSFET



QS8M12

Data Sheet

 Structure

Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(4V drive).

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TCR
Basic ordering unit (pieces) 3000

QS8M12 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

Tr1 : N-ch Tr2 : P-ch

*1

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

Unit

30 30 V

20 20 V

4 4A

12 12 A

1.0

1.0 A

12 12 A

1.5

1.25

W / TOTAL

W / ELEMENT

150

55 to 150

Dimensions (Unit : mm)

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : M12

Inner circuit

(8) (7)

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗1

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(6) (5)

∗2

∗1

(3) (4)

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1/10

2011.05 - Rev.A

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Data Sheet

QS8M12

 Electrical characteristics (Ta = 25 C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

R

GSS

(BR)DSS

DSS

GS (th)

DS (on)

--10 AVGS=±20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3042 I

*

-4056 I

m

ConditionsParameter

=4A, VGS=10V

D

=4A, VGS=4.5V

D

45 63 ID=4A, VGS=4V

iss

oss

rss

d(on)

d(off)

gd

*

- 250 - pF VDS=10V

- 90 - pF VGS=0V

- 45 - pF f=1MHz

*

-7-nsI

*

r

f

g

gs

- 30 - ns VGS=10V

*

- 30 - ns RL=7.5

-5-nsR

*
*

- 3.4 - nC ID=4A, VDD 15V

*

- 1.2 - nC VGS=5V

*

- 1.3 - nC

=2A, VDD 15V

D

=10

G

Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=4A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=4A, VGS=0V

2/10

2011.05 - Rev.A

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Data Sheet

QS8M12

 Electrical characteristics (Ta = 25 C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Yfs l3 - - SVDS=10V, ID=4A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

- 1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-4056 I

*

R

DS (on)

-5577 I

m

-6084 I

*

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 800 - pF VDS=10V

- 120 - pF VGS=0V

- 110 - pF f=1MHz

-8-nsI

*

*

- 20 - ns VGS=10V

*

*

- 80 - ns RL=7.5

*

*

- 50 - ns RG=10

*

*

- 8.4 - nC ID=4A, VDD 15V

*

*

- 3.0 - nC VGS=5V

*

*

- 3.5 - nC

*

*

=4A, VGS=10V

D

=2A, VGS=4.5V

D

=2A, VGS=4.0V

D

=2A, VDD 15V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=4A, VGS=0V

Conditions

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2011.05 - Rev.A

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Data Sheet

QS8M12

Electrical characteristic curves (Ta=25C)

〈Tr.1(Nch)〉

0

1

2

3

4

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.5V

Ta=25℃

Pulsed

0

1

2

3

4

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=3.0V

VGS=2.8V

Ta=25℃

Pulsed

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V

VGS=10V

Ta=25℃

Pulsed

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta= 125℃

Ta= 75°C
Ta= 25°C

Ta= - 25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta= 125℃

Ta= 75°C
Ta= 25°C

Ta= - 25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta= 125℃

Ta= 75°C
Ta= 25°C

Ta= - 25°C

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Data Sheet

QS8M12

0.01

0.1

1

10

0.001 0.01 0.1 1 10

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C

0.001

0.01

0.1

1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V
pulsed

Ta= 125℃

Ta= 75°C
Ta= 25°C

Ta= - 25°C

0.01

0.1

1

10

0.0 0.5 1.0 1.5 2.0

Source Current : I

s

[A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C

0

20

40

60

80

100

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=4.0A

ID=2.0A

Ta=25℃

Pulsed

1

10

100

1000

0.01 0.1 1 10

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on)

tr t

d(off)

t

f

VDD≒15V
V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 2 4 6 8 10

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

T

a

=25°C

V

DD

=15V

I

D

=4A

Pulsed

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Data Sheet

QS8M12

10

100

1000

10000

0.01 0.1 1 10 100

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C

f=1MHz
VGS=0V

C

iss Coss

C

rss

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r(t)

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

Ta=25°C
Single Pulse : 1Unit

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Rth

(ch-a)

=100°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

Ta=25°C
Single Pulse : 1Unit

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Operation in this area is limited by R

DS(on)

(VGS = 10V)

DC Operation

PW = 100μs

PW = 1ms

PW = 10ms

6/10

2011.05 - Rev.A

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Data Sheet

QS8M12

〈Tr.2(Pch)〉

0

1

2

3

4

0 0.2 0.4 0.6 0.8 1

Drain Current : -I

D

[A]

Drain-Source Voltage : -VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=-10.0V

VGS=-4.0V

VGS=-4.5V

VGS=-3.0V

VGS=-3.5V

VGS=-2.5V

Ta=25°C
Pulsed

0

1

2

3

4

0 2 4 6 8 10

Drain Current : -I

D

[A]

Drain-Source Voltage : -VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=-10.0V

VGS=-4.0V

VGS=-4.5V

VGS=-3.5V

VGS=-3.0V

VGS=-2.8V

VGS=-2.6V

VGS=-2.2V

Ta=25°C
Pulsed

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : -ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

V

GS

=-4.0V

V

GS

=-4.5V

VGS=-10V

Ta=25°C
Pulsed

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : -ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

V

GS

=-10V

pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : -ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

V

GS

=-4.5V

pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : -ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

V

GS

=-4V

pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

7/10

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Data Sheet

QS8M12

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : -ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

V

DS

=-10V

pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Currnt : -I

D

[A]

Gate-Source Voltage : -VGS [V]

Fig.8 Typical Transfer Characteristics

V

DS

=

-10V

pulsed

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= - 25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0

Source Current : -I

s

[A]

Source-Drain Voltage : -VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

0

50

100

150

200

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : -VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=-4A

ID=-2A

Ta=25°C
Pulsed

1

10

100

1000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current :- ID [A]

Fig.11 Switching Characteristics

t

d(on) tr

t

d(off)

t

f

VDD≒-15V
V

GS

=-10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 2 4 6 8 10 12 14

Gate-Source Voltage : -V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

T

a

=25°C

V

DD

=-15V

I

D

=-4A

Pulsed

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Data Sheet

QS8M12

10

100

1000

10000

0.01 0.1 1 10 100

Capacitance : C [pF]

Drain-Source Voltage : -VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz
VGS=0V

C

iss Coss

C

rss

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : - I

D

[ A ]

Drain-Source Voltage : - VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse:1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Operation in this area is limited by R

DS(on)

(VGS = -10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse : 1Unit

Mounted on a ceramic board.
(30mm

× 30mm × 0.8mm)

Rth

(ch-a)

=100°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

9/10

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Data Sheet

QS8M12

S

%

V
V

V

S

V

V

V

S

 Measurement circuits

<Tr1(Nch)>

V

GS

R

G

D.U.T.

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

D.U.T.

D

I

Fig.2-1 Gate Charge Measurement Circuit

<Tr2(Pch)>

V

GS

R

G

I

D.U.T.

D

R

V

Fig.1-2　Switching Waveforms

V

G

VD

RL

GS

VDD

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

Pulse Width

GS

V

DS

L

DD

10%

50%

90%

50%

10% 10%

DS

90% 90%

t

d(on)

t

r

t

on

t

d(off)

t

f

t

off

Fig.1-1 Switching Time Measurement Circuit

D

I

G(Const.)

V

I

GS

D.U.T.

V

D

R

L

V

DD

Fig.1-2　Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.

10/10

2011.05 - Rev.A

Notes

Notice

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