ROHM QS8M12 Technical data

4V Drive Nch + Pch MOSFET



QS8M12

Data Sheet

 Structure

Silicon N-channel MOSFET/
Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(4V drive).

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TCR
Basic ordering unit (pieces) 3000

QS8M12 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

Tr1 : N-ch Tr2 : P-ch

*1

*1

*2

Channel temperature Tch C
Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

Unit

30 30 V

20 20 V

4 4A

12 12 A

1.0

1.0 A

12 12 A

1.5

1.25

W / TOTAL

W / ELEMENT

150

55 to 150

Dimensions (Unit : mm)

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : M12

Inner circuit

(8) (7)

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗1

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(6) (5)

∗2

∗1

(3) (4)

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Data Sheet

QS8M12

 Electrical characteristics (Ta = 25 C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

R

GSS

(BR)DSS

DSS

GS (th)

DS (on)

--10 AVGS=±20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3042 I

*

-4056 I

m

ConditionsParameter

=4A, VGS=10V

D

=4A, VGS=4.5V

D

45 63 ID=4A, VGS=4V

iss

oss

rss

d(on)

d(off)

gd

*

- 250 - pF VDS=10V

- 90 - pF VGS=0V

- 45 - pF f=1MHz

*

-7-nsI

*

r

f

g

gs

- 30 - ns VGS=10V

*

- 30 - ns RL=7.5

-5-nsR

*
*

- 3.4 - nC ID=4A, VDD 15V

*

- 1.2 - nC VGS=5V

*

- 1.3 - nC

=2A, VDD 15V

D

=10

G

Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=4A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=4A, VGS=0V

2/10

2011.05 - Rev.A

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Data Sheet

QS8M12

 Electrical characteristics (Ta = 25 C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Yfs l3 - - SVDS=10V, ID=4A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

- 1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-4056 I

*

R

DS (on)

-5577 I

m

-6084 I

*

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 800 - pF VDS=10V

- 120 - pF VGS=0V

- 110 - pF f=1MHz

-8-nsI

*

*

- 20 - ns VGS=10V

*

*

- 80 - ns RL=7.5

*

*

- 50 - ns RG=10

*

*

- 8.4 - nC ID=4A, VDD 15V

*

*

- 3.0 - nC VGS=5V

*

*

- 3.5 - nC

*

*

=4A, VGS=10V

D

=2A, VGS=4.5V

D

=2A, VGS=4.0V

D

=2A, VDD 15V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=4A, VGS=0V

Conditions

3/10

2011.05 - Rev.A

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Data Sheet

QS8M12

Electrical characteristic curves (Ta=25C)

〈Tr.1(Nch)〉

0

1

2

3

4

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.5V

Ta=25℃

Pulsed

0

1

2

3

4

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=3.0V

VGS=2.8V

Ta=25℃

Pulsed

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V

VGS=10V

Ta=25℃

Pulsed

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta= 125℃

Ta= 75°C
Ta= 25°C

Ta= - 25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta= 125℃

Ta= 75°C
Ta= 25°C

Ta= - 25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta= 125℃

Ta= 75°C
Ta= 25°C

Ta= - 25°C

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2011.05 - Rev.A