Datasheet QS8K21 Datasheet (ROHM)



A

4V Drive Nch + Nch MOSFET

QS8K21

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(4V drive).

 Application

Switching

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

bbreviated symbol : K21

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

QS8K21 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

s

*1

sp

*2

D

45 V

20 V

4A

12 A

1A

12 A

1.5 W / TOTAL

1.25 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

55 to +150 C

 Inner circuit

(8) (7)

∗2

∗1

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(6) (5)

∗2

(3) (4)

(1) Tr1 Source
(2) Tr1 Gate

∗1

(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a)

*Mounted on a ceramic board.

www.rohm.com

1/5

c

○

2010 ROHM Co., Ltd. All rights reserved.

Symbol Limits Unit

83.3 °C / W /TOTAL

*

100

C / W /ELEMENT

2010.02 - Rev.A

Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10

45 - - V ID=1mA, VGS=0V

--1AVDS=45V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3853 I

*

R

DS (on)

-4867 I

-5375 I

*

l2 - - SI

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 460 - pF VDS=10V

- 110 - pF VGS=0V

- 55 - pF f=1MHz

-9-nsI

*

-25-nsV

*

-30-nsR

*

*

-7-nsR

*

-5.4-nCI

*

-2.0-nCV

-1.6-nCR

*

Symbol Min. Typ. Max. Unit

*

SD

--1.2VI

Conditions

AVGS=20V, VDS=0V



=4A, VGS=10V

D

m



=4A, VGS=4.5V

D

=4A, VGS=4.0V

D

=4A, VDS=10V

D

=2A, VDD 25V

D

=10V

GS

12.5



L

=10



G

=4A, VDD 25V

D

=5V R

GS

=10

G

6.3

L



ConditionsParameter

=4A, VGS=0V

s

Data Sheet QS8K21



www.rohm.com

2/5

c

○

2010 ROHM Co., Ltd. All rights reserved.

2010.02 - Rev.A

0

1

2

3

4

0 0.2 0.4 0.6 0.8 1

VGS= 2.8V

Ta=25°C
Pulsed

VGS= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 3.4V

V

GS

= 3.2V

V

GS

= 3.0V

0.001

0.01

0.1

1

10

11.522.53

VDS= 10V

Pulsed

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= - 25°C

1

10

100

1000

0.1 1 10

VGS= 4.0V

V

GS

= 4.5V

V

GS

= 10V

Ta= 25°C
Pulsed

0.01

0.1

1

10

00.511.5

VGS=0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

1

2

3

4

0246810

Ta=25°C
Pulsed

VGS= 2.8V

VGS= 10.0V

V

GS

= 4.5V

V

GS

= 4.0V

V

GS

= 3.4V

V

GS

= 3.2V

V

GS

= 3.0V

1

10

100

1000

0.1 1 10

VGS= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1

10

100

1000

0.1 1 10

VGS= 10V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25 °C

0.1

1

10

0.01 0.1 1 10

VDS= 10V

Pulsed

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

1

10

100

1000

0.1 1 10

VGS= 4.0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.1 Typical Output Characteristics(Ⅰ)

Fig.2 Typical Output Characteristics(Ⅱ)

Fig.3 Typical Transfer Characteristics

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Fig.8 Forward Transfer Admittance
vs. Drain Current

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[m



]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[m



]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[m



]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[m



]

FORWARD TRANSFER ADMITTANCE : |Y fs| [S]

DRAIN-CURRENT : ID[A]

SOURCE CURRENT : Is [A]

SOURCE-DRAIN VOLTAGE : VSD [V]

Electrical characteristics curves

Data Sheet QS8K21

www.rohm.com

3/5

c

○

2010 ROHM Co., Ltd. All rights reserved.

2010.02 - Rev.A

0

50

100

150

051015

Ta= 25°C
Pulsed

ID= 4.0A

ID= 2.0A

0

2

4

6

8

10

0123456 78910

Ta= 25°C
V

DD

= 25V

I

D

= 4.0A

R

G

=10

Ω

Pulsed

10

100

1000

0.01 0.1 1 10 100

C

iss

C

rss

Ta= 25°C
f=1MHz
V

GS

=0V

C

oss

1

10

100

1000

10000

0.01 0.1 1 10

t

f

t

d(on)

t

d(off)

Ta= 25°C
V

DD

= 25V

V

GS

=10V

R

G

=10

Ω

Pulsed

t

r

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

Fig.12 Dynamic Input Characteristics

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

Fig.11 Switching Characteristic s

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[m



]

GATE-SOURCE VOLTAGE : VGS[V]

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

GATE-SOURCE VOLTAGE : V

GS

[V]

TOTAL GATE CHARGE : Qg [nC]

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

Data Sheet QS8K21

www.rohm.com

4/5

c

○

2010 ROHM Co., Ltd. All rights reserved.

2010.02 - Rev.A

F

it

S

%

V
V

F

S

Fig.2-2 Gate charge waveform

V

Measurement circuits

Data Sheet QS8K21

Pulse width

V

GS

R

G

D.U.T.

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

t

r

d(off)

t

off

t

f

ig.1-1 Switching time measurement circu

V

I

G(Const.)

GS

R

G

D.U.T.

D

I

R

L

V

DD

ig.2-1 Gate charge measurement circuit

Fig.1-2 Switching waveforms

V

G

V

D

GS

Q

gs

g

Q

Q

gd

Charge

www.rohm.com

5/5

c

○

2010 ROHM Co., Ltd. All rights reserved.

2010.02 - Rev.A

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel­controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.

http://www.rohm.com/contact/

R1010

A