ROHM QS8K21 Technical data



A

4V Drive Nch + Nch MOSFET

QS8K21

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(4V drive).

 Application

Switching

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

bbreviated symbol : K21

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

QS8K21 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

DSS

GSS

DP

P

D

*1

s

*1

sp

*2

D

45 V

20 V

4A

12 A

1A

12 A

1.5 W / TOTAL

1.25 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

55 to +150 C

 Inner circuit

(8) (7)

∗2

∗1

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(6) (5)

∗2

(3) (4)

(1) Tr1 Source
(2) Tr1 Gate

∗1

(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a)

*Mounted on a ceramic board.

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Symbol Limits Unit

83.3 °C / W /TOTAL

*

100

C / W /ELEMENT

2010.02 - Rev.A

Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10

45 - - V ID=1mA, VGS=0V

--1AVDS=45V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3853 I

*

R

DS (on)

-4867 I

-5375 I

*

l2 - - SI

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 460 - pF VDS=10V

- 110 - pF VGS=0V

- 55 - pF f=1MHz

-9-nsI

*

-25-nsV

*

-30-nsR

*

*

-7-nsR

*

-5.4-nCI

*

-2.0-nCV

-1.6-nCR

*

Symbol Min. Typ. Max. Unit

*

SD

--1.2VI

Conditions

AVGS=20V, VDS=0V



=4A, VGS=10V

D

m



=4A, VGS=4.5V

D

=4A, VGS=4.0V

D

=4A, VDS=10V

D

=2A, VDD 25V

D

=10V

GS

12.5



L

=10



G

=4A, VDD 25V

D

=5V R

GS

=10

G

6.3

L



ConditionsParameter

=4A, VGS=0V

s

Data Sheet QS8K21



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2010 ROHM Co., Ltd. All rights reserved.

2010.02 - Rev.A