ROHM QS8K2 Technical data

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©2010 ROHM Co., Ltd. All rights reserved.

2.5V Drive Nch MOSFET

t

(8) (7)

(1) (2)

(6) (5)

(3) (4)

QS8K2

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low On-resistance.

2) High power package.

3) 2.5V drive.

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

QS8K2 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

30 V

12 V

3.5 A

*1

12 A

1A

*1

12 A

*2

1.5 W / TOTAL

1.25 W / ELEMENT

P

DSS

GSS

D

DP

s

sp

D

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Abbreviated symbol : K02

 Inner circui

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗2

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a)

* Mounted on a ceramic board.

Symbol Limits Unit

83.3 °C / W /TOTAL

*

100

°C / W /ELEMENT

1/5

2010.09 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

QS8K2

 Electrical characteristics (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g
gs
gd

Conditions

--10 AVGS=±12V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

0.5 - 1.5 V VDS=10V, ID=1mA

-3854 I

*

-4056 I

-5577 I

*

l 3.0 - - S ID=3.5A, VDS=10V

- 285 - pF VDS=10V

- 90 - pF VGS=0V

- 55 - pF f=1MHz

*

-8-nsI

*

- 12 - ns VGS=4.5V

*

- 29 - ns RL=8.8

*

- 13 - ns RG=10

*

- 4.6 - nC ID=3.5A, V

*

- 0.7 - nC VGS=4.5V RL=4.3

- 1.5 - nC RG=10

*

=3.5A, VGS=4.5V

D

m

=3.5A, VGS=4V

D

=3.5A, VGS=2.5V

D

=1.7A, VDD 15V

D

DD

15V

Body diode characteristics (Source-Drain) (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=3.5A, VGS=0V

Conditions

2/5

2010.09 - Rev.A