Datasheet QS8K2 Datasheet (ROHM)

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2.5V Drive Nch MOSFET

t

(8) (7)

(1) (2)

(6) (5)

(3) (4)

QS8K2

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low On-resistance.

2) High power package.

3) 2.5V drive.

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

QS8K2 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation

Symbol Limits Unit

30 V

12 V

3.5 A

*1

12 A

1A

*1

12 A

*2

1.5 W / TOTAL

1.25 W / ELEMENT

P

DSS

GSS

D

DP

s

sp

D

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Abbreviated symbol : K02

 Inner circui

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗2

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a)

* Mounted on a ceramic board.

Symbol Limits Unit

83.3 °C / W /TOTAL

*

100

°C / W /ELEMENT

1/5

2010.09 - Rev.A

Data Sheet

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QS8K2

 Electrical characteristics (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g
gs
gd

Conditions

--10 AVGS=±12V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

0.5 - 1.5 V VDS=10V, ID=1mA

-3854 I

*

-4056 I

-5577 I

*

l 3.0 - - S ID=3.5A, VDS=10V

- 285 - pF VDS=10V

- 90 - pF VGS=0V

- 55 - pF f=1MHz

*

-8-nsI

*

- 12 - ns VGS=4.5V

*

- 29 - ns RL=8.8

*

- 13 - ns RG=10

*

- 4.6 - nC ID=3.5A, V

*

- 0.7 - nC VGS=4.5V RL=4.3

- 1.5 - nC RG=10

*

=3.5A, VGS=4.5V

D

m

=3.5A, VGS=4V

D

=3.5A, VGS=2.5V

D

=1.7A, VDD 15V

D

DD

15V

Body diode characteristics (Source-Drain) (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=3.5A, VGS=0V

Conditions

2/5

2010.09 - Rev.A

Data Sheet

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QS8K2

 Electrical characteristic curves

3.5

3

[A]

D

2.5

2

1.5

1

DRAIN CURRENT : I

0.5

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ)

1000

Ta= 25°C
Pulsed

(on)[mΩ]

DS

100

VGS= 10V

VGS= 4.5V

VGS= 4.0V

VGS= 2.5V

VGS= 2.0V

VGS= 1.8V

Ta=25°C
Pulsed

VGS= 1.5V

VGS= 2.5V

VGS= 4.0V

VGS= 4.5V

3.5

VGS= 10V

3

[A]

D

2.5

1.5

DRAIN CURRENT : I

0.5

1000

(on)[mΩ]

DS

100

VGS= 4.5V

VGS= 4.0V

VGS= 2.5V

2

VGS= 2.0V

VGS= 1.8V

1

0

0246810

DRAIN-SOURCE VOLTAGE : VDS[V]

VGS= 4.5V

Pulsed

VGS= 1.5V

Ta=125°C
Ta=75°C
Ta=25°C
Ta= 25°C

Ta=25°C
Pulsed

10

VDS= 10V

Pulsed

[A]

D

1

0.1

0.01

DRAIN CURRENT : I

0.001

0123

GATE-SOURCE VOLTAGE : VGS[V]

Fig.3 Typical Transfer Characteristics

1000

VGS= 4V

Pulsed

(on)[mΩ]

DS

100

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=  25°C

Ta=125°C
Ta=75°C
Ta=25°C
Ta= 25°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

1000

VGS= 2.5V

Pulsed

(on)[mΩ]

DS

100

RESISTANCE : R

10

STATIC DRAIN-SOURCE ON-STATE

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= 25°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

10

VDS= 10V

Pulsed

1

0.1

0.01 0.1 1 10

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

Fig.8 Forward Transfer Admittance
vs. Drain Current

Ta= 25°C
Ta=25°C
Ta=75°C
Ta=125°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

10

VGS=0V

Pulsed

1

0.1

SOURCE CURRENT : Is [A]

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta=25°C

3/5

2010.09 - Rev.A

Data Sheet

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QS8K2

150

100

(ON)[mΩ]

DS

50

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

0510

GATE-SOURCE VOLTAGE : VGS[V]

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

1000

100

CAPACITANCE : C [pF]

Ta=25°C
f=1MHz
VGS=0V

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : VDS[V]

ID= 1.75A

C

rss

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

ID= 3.5A

C

oss

Ta=25°C
Pulsed

C

iss

1000

t

d(off)

t

f

100

10

SWITCHING TIME : t [ns]

1

0.01 0.1 1 10

Fig.11 Switching Characteristics

t

r

DRAIN-CURRENT : ID[A]

Ta=25°C
VDD=15V

VGS=4.5V

RG=10Ω

Pulsed

t

d(on)

5

[V]

GS

4

3

2

1

GATE-SOURCE VOLTAGE : V

0

0123456

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C
VDD=15V

ID= 3.5A

RG=10Ω

Pulsed

4/5

2010.09 - Rev.A

Data Sheet

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QS8K2

F

it

S

%

V
V

F

S

 Measurement circuits

V

GS

D.U.T.

R

G

ig.1-1 Switching time measurement circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate charge measurement circuit

D.U.T.

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

Fig.1-2 Switching waveforms

VG

D

I

V

D

R

L

VGS

QgsQ

V

DD

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

5/5

2010.09 - Rev.A

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A