ROHM QS8J4 Technical data

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©2010 ROHM Co., Ltd. All rights reserved.

4V Drive Pch + Pch MOSFET



(8) (7)

(1) (2)

(6) (5)

(3) (4)

QS8J4

 Structure  Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(4V drive).

 Application

Switching

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : J04

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

QS8J4 

 Absolute maximum ratings (Ta = 25C)

Parameter
Drain-source voltage V
Gate-source voltage V

Drain current
Source current

(Body Diode)

Continuous I
Pulsed I
Continuous I
Pulsed I

Power dissipation

Symbol Limits Unit

DSS
GSS

DP

P

D

*1

s

sp

D

30 V
20 V

4A

16 A

1A

*1

16 A

*2

1.5 W / TOTAL

1.25 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

∗1

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a)

* Each terminal mounted on a ceramic board.

Symbol Limits Unit

83.3 °C / W /TOTAL

*

100 °C / W /ELEMENT

1/5

2010.04 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

QS8J4

 Electrical characteristics (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-4056 I

Static drain-source on-state
resistance

R

DS (on)

*

-5577 I

m

-6084 I

iss

oss

rss

d(on)

d(off)

gd

*

- 800 - pF VDS=10V

- 120 - pF VGS=0V

- 110 - pF f=1MHz

-8-nsI

*

*

- 20 - ns VGS=10V

*

*

r

- 80 - ns RL=7.5

*

*
*

*

*

*

f

g

gs

- 50 - ns RG=10

*

*

*

*

- 8.4 - nC ID=4A, VDD 15V

*

*

*

*

- 3.0 - nC VGS=5V

- 3.5 - nC RL=3.8,RG=10

*

*

*

*

Forward transfer admittance l Yfs l3 - -SI
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

ConditionsParameter

=4A, VGS=10V

D

=2A, VGS=4.5V

D

=2A, VGS=4V

D

=4A, VDS=10V

D

=2A, VDD 15V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter Symbol Min. Typ. Max. Unit

Forward Voltage V

*Pulsed

SD

*

--1.2 V Is=4A, VGS=0V

Conditions

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2010.04 - Rev.A