Datasheet QS8J4 Datasheet (ROHM)

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4V Drive Pch + Pch MOSFET



(8) (7)

(1) (2)

(6) (5)

(3) (4)

QS8J4

 Structure  Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(4V drive).

 Application

Switching

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : J04

 Packaging specifications

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

QS8J4 

 Absolute maximum ratings (Ta = 25C)

Parameter
Drain-source voltage V
Gate-source voltage V

Drain current
Source current

(Body Diode)

Continuous I
Pulsed I
Continuous I
Pulsed I

Power dissipation

Symbol Limits Unit

DSS
GSS

DP

P

D

*1

s

sp

D

30 V
20 V

4A

16 A

1A

*1

16 A

*2

1.5 W / TOTAL

1.25 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.

 Inner circuit

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗2

∗1

∗1

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a)

* Each terminal mounted on a ceramic board.

Symbol Limits Unit

83.3 °C / W /TOTAL

*

100 °C / W /ELEMENT

1/5

2010.04 - Rev.A

Data Sheet

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QS8J4

 Electrical characteristics (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-4056 I

Static drain-source on-state
resistance

R

DS (on)

*

-5577 I

m

-6084 I

iss

oss

rss

d(on)

d(off)

gd

*

- 800 - pF VDS=10V

- 120 - pF VGS=0V

- 110 - pF f=1MHz

-8-nsI

*

*

- 20 - ns VGS=10V

*

*

r

- 80 - ns RL=7.5

*

*
*

*

*

*

f

g

gs

- 50 - ns RG=10

*

*

*

*

- 8.4 - nC ID=4A, VDD 15V

*

*

*

*

- 3.0 - nC VGS=5V

- 3.5 - nC RL=3.8,RG=10

*

*

*

*

Forward transfer admittance l Yfs l3 - -SI
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

ConditionsParameter

=4A, VGS=10V

D

=2A, VGS=4.5V

D

=2A, VGS=4V

D

=4A, VDS=10V

D

=2A, VDD 15V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

<It is the same ratings for Tr1 and Tr2.>

Parameter Symbol Min. Typ. Max. Unit

Forward Voltage V

*Pulsed

SD

*

--1.2 V Is=4A, VGS=0V

Conditions

2/5

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Data Sheet

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QS8J4

 Electrical characteristic curves

10

Ta=25°C
Pulsed

8

[A]

D

6

4

2

DRAIN CURRENT : -I

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics

1000

Ta=25°C
Pulsed

(on)[mΩ]

100

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

VGS= -10V

VGS= -4.5V

VGS= -4.0V

VGS= -3.0V

VGS= -2.5V

VGS= -4.0V

VGS= -4.5V

VGS= -10V

10

8

[A]

D

6

4

2

DRAIN CURRENT : -I

0

0246810

1000

(on)[mΩ]

100

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

VGS= -10V

VGS= -4.5V

VGS= -4.0V

VGS= -3.0V

VGS= -2.5V

DRAIN-SOURCE VOLTAGE : -VDS[V]

VGS= -10V

Pulsed

DRAIN-CURRENT : -ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta=25°C
Pulsed

10

VDS= -10V

Pulsed

[A]

1

D

DRAIN CURRENT : -I

0.001

1000

(on)[mΩ]

DS

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

Ta= 125°C

Ta= 75°C
Ta= 25°C

0.1
Ta= - 25°C

0.01

0123

GATE-SOURCE VOLTAGE : -VGS[V]

VGS= -4.5V

Pulsed

100

10

1

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= -4.0V

Pulsed

(on)[mΩ]

100

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

100

VDS= -10V

Pulsed

10

1

0.1

0.01 0.1 1 10

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : -ID[A]

Fig.8 Forward Transfer Admittance
vs. Drain Current

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

10

[A]

VGS=0V

s

Pulsed

1

0.1

SOURCE CURRENT : -I

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

3/5

2010.04 - Rev.A

Data Sheet

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QS8J4

f

150

ID= -2.0A

(ON)[mΩ]

100

DS

50

Ta=25°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

Pulsed

0

0 5 10 15

GATE-SOURCE VOLTAGE : -VGS[V]

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

10000

Ta=25°C
f=1MHz
VGS=0V

1000

100

CAPACITANCE : C [pF]

Crss

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

ID= -4.0A

Coss

Ciss

10000

t

1000

100

SWITCHING TIME : t [ns]

d(off)

t

t

d(on)

10

1

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.11 Switching Characteristics

t

r

Ta=25°C
VDD= -15V

VGS= -10V

RG=10Ω

Pulsed

10

[V]

8

GS

6

4

2

0

GATE-SOURCE VOLTAGE : -V

0 1 2 3 4 5 6 7 8 9 101112131415

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C
VDD= -15V

ID= -4.0A

RG=10Ω

Pulsed

4/5

2010.04 - Rev.A

Data Sheet

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QS8J4

 Measurement circuits

VGS

RG

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

RG

Fig.2-1 Gate Charge Measurement Circuit

D.U.T.

I

D.U.T.

D

I

RL

VDD

D

RL

VDD

VDS

VDS

Pulse Width

V

GS

10%

50%

V

DS

90% 90%

t

d(on)

t

on

90%

10% 10%

t

d(off)

t

r

Fig.1-2 Switching Waveforms

V

G

Q

g

V

GS

QgsQ

gd

Fig.2-2 Gate Charge Waveform

50%

t

off

Charge

t

f

5/5

2010.04 - Rev.A

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A