ROHM QS8J1 Schematic [ru]
Transistors
1.5V Drive Pch+Pch MOSFET
QS8J1
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Low voltage drive. (1.5 V)
3) High power package.
zApplications
Switching
zPackaging specifications zInner circuit
Type
QS8J1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
P
D
∗1
∗1
∗2
−55 to +150
Limits
−12
±10
±4.5
±18
−1
−18
1.5
150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol Limits Unit
83.3
Rth(ch-a)
∗
100
TSMT8
Abbreviated symbol : J01
(8) (7)
∗2
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(8) (7) (5)(6)
(1) (2) (4)(3)
∗2
∗1
Unit
VV
VV
AI
AI
AI
AI
W / TOTAL
W / ELEMENT1.25
°CTch
°CTstg
°C/W / TOTAL
°C/W / ELEMENT
(6) (5)
(3) (4)
QS8J1
Each lead has same dimensions
(1) Tr1 Source
∗1
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1/5
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min. Typ. Max.
I
GSS
−−±10 µAVGS=±10V, VDS=0V
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 21 29 I
− 27 38 mΩ
∗
DS (on)
− 49 98 I
∗
6.5 −−SV
Y
fs
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 2450 − pF V
iss
− 320
oss
290
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
12
−
75
−
390
−
215
−
31
−
4.5
−
4.0
−−nC
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −4.5A, VGS=0VForward voltage
Unit
= −12V, VGS=0V
DS
= −6V, ID= −1mA
DS
= −4.5A, VGS= −4.5V
mΩ
D
I
= −2.2A, VGS= −2.5V
D
mΩ− 36 54 ID= −2.2A, VGS= −1.8V
mΩ
= −0.9A, VGS= −1.5V
D
= −6V, ID= −4.5A
DS
= −6V
DS
− pF V
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC
VDD −6V
GS
= −4.5V
V
ID= −2.2A
L
2.7Ω
R
R
G
=10Ω
V
−6V
DD
V
= −4.5V
GS
I
= −4.5A
D
RL 1.3Ω / RG=10Ω
Unit
QS8J1
Conditions
Conditions
2/5
Transistors
V
V
V
V
V
V
V
E
E
E
E
E
zElectrical characteristic curves
10
8
[A]
D
6
4
DRAIN CURRENT -I
2
0
0.0 0. 2 0.4 0.6 0.8 1. 0
DRAIN-SOURCE VOLTAGE -V
Fig.1 Typical Output Characteristics(Ⅰ)
VGS=-10V
=-4.5
V
GS
VGS=-2.5
VGS=-1.8
VGS=-1.5
VGS=-1.4
VGS=-1.3
VGS=-1.2
Ta= 25
Pulsed
[V]
DS
QS8J1
10
℃
VGS=-10V
=-1.6V
V
GS
8
[A]
D
6
4
DRAIN CURRENT -I
2
0
0246810
DRAIN-SOURCE VOLTAGE -V
VGS=-1.5V
Ta=25
Pulsed
VGS=-1.4V
VGS=-1.3V
VGS=-1.2V
VGS=-1.1V
[V]
DS
℃
Fig.2 Typical Output Characteristics(Ⅱ)
10
Ta=1 25
[A]
1
D
0.1
0.01
DRAIN CURRENT : -I
75℃
25℃
-25
℃
℃
0.001
0.0 0.5 1.0 1.5 2.0
GATE-SOURCE VOLTAGE :- V
Fig.3 Typical Transfer Characteristics
VDS= -6V
Pulsed
[V]
GS
1000
Ta= 25
℃
Pulsed
VGS=-1.5V
(on) [mΩ]
DS
100
V
V
V
RESISTANCE:R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
1000
VGS= -1.8V
Pulsed
(on) [mΩ]
DS
100
RESISTANCE:R
STATIC DRAIN-SOURCE ON-STAT
10
0.1 1 10
DRAIN CURRENT : -I
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
=-1.8V
GS
=-2.5V
GS
=-4.5V
GS
D
Ta= 125
Ta= 75
Ta= 25
Ta= -25
[A]
D
[A]
1000
VGS= -4.5V
Pulsed
Ta=1 25
℃
Ta= 7 5
(on) [mΩ]
DS
100
Ta= 2 5
Ta= - 25
℃
℃
℃
RESISTANCE :R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
[A]
D
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
VGS= -1.5V
℃
Puls ed
℃
℃
℃
(on) [mΩ]
DS
100
Ta=125
Ta= 75
Ta= 25
Ta= -25
℃
℃
℃
℃
RESISTANCE:R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
[A]
D
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
1000
VGS= -2.5V
Puls ed
Ta=125
Ta= 75
(on) [mΩ]
DS
100
Ta= 25
Ta= -25
RESISTANCE:R
10
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10
DRAIN CURRENT : -I
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
10
[A]
1
DR
:- I
0.1
0.01
REVERSE DRA IN CURRENT CURRENT
℃
Ta=125
℃
75
℃
25
℃
-25
0.0 0.2 0.4 0.6 0.8 1 .0
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
℃
℃
D
℃
℃
[A]
VGS=0V
Pulsed
3/5
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