ROHM QS6Z5 Technical data
Data Sheet
Complex Midium Power Transistors (±50V/±1A)
QS6Z5
Structure Dimensions (Unit : mm)
NPN/PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage
V
V
= 0.35V (Max.) (IC / IB= 500mA / 25mA)
CE (sat)
= 0.40V (Max.) (IC / IB= 500mA / 25mA)
CE (sat)
2) High speed switching
Applications
Low Frequency Amplifier
Driver
TSMT6
(1) Tr.1 Base
(2) Tr.2 Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Emitter
(6) Tr.1 Collecto
r
Abbreviated symbol : Z05
Packaging specifications
Package TSMT6
Type
Code TR
Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta = 25C)
<Tr.1>
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
<Tr.2>
DC I
Pulsed I
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
Inner circuit (Unit : mm)
(6) (5)
(1) Tr.1 Base
(2) Tr.2 Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Emitter
(6) Tr.1 Collector
CBO
CEO
V
EBO
C
*1
CP
CBO
CEO
V
EBO
C
*1
CP
50 V
50 V
6V
1A
2A
50
50
6
1
2
V
V
V
A
A
(1) (2) (3)
(4)
<Tr.1 and Tr.2>
Parameter
Symbol Limits Unit
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40 x 40 x 0.7[mm] ceramic board.
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*2
P
D
*3
P
D
*3
P
D
j
stg
0.5 W/Total
1.25 W/Total
0.9 W/Element
150 C
55 to 150 C
1/7
2011.05 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS6Z5
_
_
Electrical characteristics (Ta = 25°C)
<Tr.1>
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
h
C
CEO
CBO
EBO
CBO
EBO
FE
f
T
ob
t
on
t
stg
t
f
50 - - V
50 - - V
6--V
--1
--1
*1
- 130 350 mV
180 - 450 -
*1
-
-
-40-ns
*2
*2
- 410 - ns
*2
-75-ns
7
A
A
MHz360 -
pF
-
Conditions
= 1mA
I
C
= 100μA
I
C
= 100μA
I
E
= 50V
V
CB
= 4V
V
EB
=500mA, IB=25mA
I
C
= 2V, IC= 50mA
V
CE
= 10V
V
CE
I
=200mA, f=100MHz
E
V
= 10V, IE=0A
CB
f=1MHz
= 0.5A, IB1= 50mA,
I
C
I
=50mA, V
B2
CC
10V
<Tr.2>
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
h
C
CEO
CBO
EBO
CBO
EBO
FE
f
T
ob
t
on
t
stg
t
50
50
6
--
--
*1
-
180 - 450 -
*1
-
-12-pF
-40-ns
*2
*2
- 250 - ns
*2
f
-35-ns
--V
--V
--V
1 A
1 A
200 400
400 -
mV
MHz
Conditions
I
= 1mA
C
I
= 100μA
C
I
= 100μA
E
V
= 50V
CB
V
= 4V
EB
I
= 500mA, IB= 25mA
C
V
= 2V, IC= 50mA
CE
= 10V
V
CE
I
=200mA, f=100MHz
E
= 10V, IE=0A
V
CB
f=1MHz
IC= 0.5A, IB1= 50mA,
I
= 50mA, V
B2
CC
10V
2/7
2011.05 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS6Z5
Electrical characteristic curves (Ta=25C)
〈Tr.1〉
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0 0.5 1 1.5 2
2.5mA
2.0mA
1.5mA
1.0mA
IB=0.5mA
3.0mA
4mA
5mA
Ta=25°C
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.2 Typical OutputCharacteristics
COLLECTOR CURRENT : I
C
[A]
10
100
1000
1 10 100 1000 10000
DC CURRENT GAIN : hFE
Ta=25°C
VCE=5V
2V
COLLECTOR CURRENT : IC[mA]
Fig.3 DC Current Gain vs. Collector Current ( I )
10
100
1000
1 10 100 1000 10000
DC CURRENT GAIN :hFE
VCE=2V
Ta=125°C
75°C
25°C
-40°C
COLLECTOR CURRENT : IC[mA]
Fig.4 DC Current Gain vs.Collector Current ( II )
0.001
0.01
0.1
1
1 10 100 1000 10000
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
COLLECTOR CURRENT : IC[mA]
Ta=25°C
IC/IB=50
20
10
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( I )
0.001
0.01
0.1
1
1 10 100 1000 10000
COLLECTOR SATURATION VOLTAGE :V
CE
(sat)[V]
COLLECTOR CURRENT : IC[mA]
IC/IB=20
Ta=125°C
75°C
25°C
-40°C
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current(II)
1
10
100
1000
10000
0 0.5 1 1.5
COLLECTOR CURRENT :I
C
[mA]
VCE=2V
BASE TO EMITTER VOLTAGE : VBE[V]
Ta=125°C
75°C
25°C
-40°C
Fig.1 Ground Emitter Propagation Characteristics
3/7
2011.05 - Rev.A
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