ROHM QS6U24 Schematic [ru]

Transistor

4V Drive Pch+SBD MOS FET

QS6U24

zStructure zExternal dimens ions (Unit : mm)
Silicon P-channel MOS FET

Schottky Barrier DIODE

zFeatures

1) The QS6U24 combines Pch MOS FET with a
Schottky barrier diode in a TSMT6 package.

2) Low on-state resisternce with a fast switching.

3) Low voltage drive (4V).

4) Built-in schottky barrier diode has low forward voltage.

zApplications zInner circuit
Load switch, DC/DC conversion

zPackaging specifications

Type

QS6U24

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

<

MOSFET

>

Drain-source voltage

Parameter

Gate-source voltage
Drain current
Source current

(Body diode)
Channel temperature
Power dissipation

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

∗1

DP

S

∗1

SP

Tch 150

∗3

P

D

Limits Unit

−30

±20
±1.0
±2.0

−0.3

−1.2

0.9

W/ELEMENT

<Di>

Parameter Symbol Limits Unit

Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature

Power dissipation

<

MOSFET AND Di

>

Parameter Symbol Limits Unit

Total power dissipatino
Range of strage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board

RM

R

F

∗2

FSM

Tj 150

∗3

D

P

∗3

D

P

Tstg

−55 to +150

25
20

0.7

3.0

0.7

1.25

W/ELEMENT

VV
VV
AI
AI
AI
AI

°C

VV
VV
AI
AI

°C

W/TOTAL

°C

TSMT6

2.9

1.9

0.950.95

(6)

(5)

(4)

2.8

1.6

(1)

(2)

1pin mark

Abbreviated symbol : U24

∗1 ESD protection diode
∗2 Body diode

∗ A protection diode has been buitt in between the gate and

the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.

(3)

0.4

Each lead has same dimensions

(5)

(6) (4)

∗2

∗1

(1) (2)

1.0MAX

0.85

0.7

0.16

QS6U24

0~0.1

0.6

~

0.3

(1)Anode
(2)Source
(3)Gate
(4)Drain

(3)

(5)N/C
(6)Cathode

Rev.B 1/4

Transistor

zElectrical characteristics (Ta=25°C)

<

MOSFET

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-starte
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗ Pulsed

<

Body diode (source-drain)

Forward voltage

>

Parameter Symbol

I

GSS

(BR) DSS

V

I

DSS

V

GS (th)

R

DS (on)

Y

fs

C

iss

C

oss
rss

C

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

>

Parameter Symbol

SD

V

∗

∗

∗

∗

∗

∗

Min.

Typ. Max.

−−±10 µAV

Unit

GS

Conditions

=±20V, VDS=0V

−30 −−VID= −1mA, VGS=0V

−−−1 µAVDS= −30V, VGS=0V

−1.0 −−2.5 V VDS= −10V, ID= −1mA

− 300 400 mΩ I

D

= −1A, VGS= −10V

− 500 700 mΩ ID= −0.5A, VGS= −4.5V

− 600 800 mΩ I

0.5 −−SV

D

= −0.5A, VGS= −4V

DS

= −10V, ID= −0.5A

− 90 − pF VDS= −10V

− 2516− pF VGS=0V

−

−

−

−

−

−

−

−−nC ID= −1.0A

Min. Typ. Max.

− pF f=1MHz

9

− ns ID= −0.5A

7

− ns

18

− ns

7

− ns

1.7

− nC

0.6

− nC VGS= −5V

0.4

Unit

V

V
R
R

V

DD

GS

= −4.5V

L

=30Ω

G

=10Ω

DD

−15

−15

V

V

Conditions

−−−1.2 V IS=−0.3A, VGS=0V

QS6U24

<Di>

Parameter Symbol

Forward voltage drop

Reverse current

Rev.B 2/4

Min. Typ. Max.

V

F

−−0.49 V IF=0.7A

R

−−200 µAVR=20V

I

Unit

Conditions