ROHM QS6U22 Technical data

Transistors

d.

2.5V Drive Pch+SBD MOS FET

QS6U22

zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Schottky Barrier DIODE

zFeatures

1) The QS6U22 combines Pch MOS FET with a Schottky
barrier diode in a TSMT6 package.

2) Low on-state resistance with fast switching.

3) Low voltage drive (2.5V).

4) Built-in schottky barrier diode has low forward voltage.

zApplic ations
Load switch, DC / DC conversion

zPackaging specifications zEquivalent circuit

Type

QS6U22

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

TSMT6

1pin mark

(6) (4)

2.9

1.9

0.950.95

(6)

(5)

(4)

(1)

(2)

(3)

0.4

Abbreviated symbol : U22

(5)

∗2

1.0MAX

0.85

0.7

2.8

1.6

0.16

Each lead has same dimensions

QS6U22

0~0.1

0.6

~

0.3

(3)

(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) N / C
(6) Cathode

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗A protection diode has been in between the gate and

the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceede

(1) (2)

Rev.A 1/4

Transistors

QS6U22

zAbsolute maximum ratings (Ta=25°C)

<MOSFET>

Parameter

Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)

Channel temperature
Power dissipation

Continuous
Pulsed
Continuous
Pulsed

Symbol

V

DSS

V

GSS

I

D

∗1

I

DP

I

S

∗1

I

SP

Tch 150

∗3

P

D

Limits Unit

−20

±12
±1.5
±6.0

−0.75

−6.0

V
V
A
A
A
A

°C

0.9

W / ELEMENT

<Di>

Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation

V

I

V

I

FSM

Tj

P

RM

R

F

∗2

150

∗3

D

0.7

V25
V20
A0.7
A3.0

°C

W / ELEMENT

<MOSFET AND Di>

∗3

Total power dissipation
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

P

D

Tstg

•

1cyc. ∗3 Mounted on a ceramic board

1.25

−55 to +150

W / TOTAL

°C

zElectrical characteristics (Ta=25°C)

〈MOSFET〉

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

V

(BR) DSS

V

R

Min.

I

GSS

Typ. Max.

−−±10 µAV

Unit

GS

−20 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

DS (on)

Y

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

−−−1 µAVDS= −20V, VGS=0V

−0.7 −−2.0 V VDS= −10V, ID= −1mA

− 155 215 I

∗

− 170 235 mΩ

− 310 430 I

∗

1.0 −−SV

fs

− 270 − pF VDS= −10V

iss

− 4035− pF VGS=0V

oss

−

rss

∗

−

∗

t

r

−

∗

−

∗

t

−

f

∗

−

g

∗

−

gs

∗

−−nC

gd

0.85

− pF f=1MHz

10

− ns

12

− ns

45

− ns

20

− ns

3.0

− nC

0.8

− nC

= −1.5A, VGS= −4.5V

mΩ

D

= −1.5A, VGS= −4V

I

D

= −0.75A, VGS= −2.5V

mΩ

D

DS

ID= −0.75A

V

DD

GS

V
R

L

R

G

V

DD

VGS= −4.5V
RL=10Ω / RG=10Ω
ID= −1.5A

Conditions

=±12V, VDS=0V

= −10V, ID= −0.75A

−15V

= −4.5V

=20Ω

=10Ω

−15V

〈

Body diode (source−drain)

Parameter Symbol

〉

Min. Typ. Max.

V

SD

Unit

−−−1.2 V IS= −0.75A, VGS=0VForward voltage

Conditions

〈Di〉

Parameter Symbol
Forward voltage drop
Reverse current

Min. Typ. Max.

V

F

R

I

Unit

−−0.49 V IF=0.7A

−−200 µAVR=20V

Conditions

Rev.A 2/4