ROHM QS6M4 Technical data

Transistors

2.5V Drive Nch+Pch MOSFET

QS6M4

zStructure

Silicon P-channel MOSFET
Silicon N-channel MOSFET

zFeatures

1) The QS6M4 combines Pch MOSFET with a Nch
MOSFET in a single TSMT6 package.

2) Low on-state resistance with a fast switching.

3) Low voltage drive (2.5V).

zApplications

Load switch, inverter

zDimensions (Unit : mm)

TSMT6

2.9

1.9

0.950.95

(6)

(5)

(4)

(1)

1pin mark

(2)

0.4

Abbreviated symbol : M04

(3)

QS6M4

1.0MAX

0.85

0.7

2.8

1.6

0~0.1

0.6

~

0.3

0.16

Each lead has same dimensions

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

QS6M4

Taping

TR

3000

zEquivalent circuit

(6) (5) (4)

∗1

∗2

∗2

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage
Gate-source voltage

Drain current

(Body diode)
Total power dissipation

Channel temperature
Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
ContinuousSource current
Pulsed

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

P

D

∗1

∗1

∗2

Nchannel

−55 to +150

Limits

1.25

0.9

150

Pchannel

−20

±12
±1.5
±6.0

−0.75

−6.0

Unit

V30
V±12
A±1.5
A±6.0
A0.8
A6.0

W / TOTAL

W / ELEMENT

°CTch
°CTstg

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

(2) (3)

(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

Rth (ch-a)

100

∗

139

°C / W / TOTAL

°C / W / ELEMENT

Rev.B 1/5

Transistors

zElectrical characteristics (T a=25°C)
<Tr1. N-ch MOSFET>

QS6M4

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

V

(BR) DSS

V

R

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

Min.−Typ. Max.

Unit

Conditions

−±10 µAVGS=±12V / VDS=0V

30 −−VID=1mA / VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 170 230 I

− 180 245 mΩ I

− 260 360 I

1.0 −−SV

− 80 − pF V

− 2515− pF V

−

−

−

−

−

−

−

−−nC I

− pF f=1MHz

7

− ns

18

− ns

15

− ns

15

− ns

1.6

− nC

0.5

− nC V

0.9

=30V / VGS=0V

DS

=10V / ID=1mA

DS

=1.5A / VGS=4.5V

D

=1.5A / VGS=4.0V

D

=1.0A / VGS=2.5V

D

=10V / ID=1.0A

DS

=10V

DS

=0V

GS

ID=1A, VDD 15V
V

=4.5V

GS

R

=15Ω / RG=10Ω

L

15V
=4.5V

R
R

V

DD
GS

=1.5A

D

=10Ω

L

=10Ω

G

zBody diode characteristics (Source-Drain)
<Tr1. N-ch MOSFET>

Parameter Symbol
Forward voltage

∗Pulsed

Min. Typ. Max.

∗

V

SD

Unit

Conditions

−−1.2 V IS=3.2A / VGS=0V

Rev.B 2/5