ROHM QS6M3 Technical data
Transistors
2.5V Drive Nch+Pch MOSFET
QS6M3
zStructure
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
zApplication
Power switching, DC / DC conve rter .
zPackaging specifications
Type
QS6M3
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
ContinuousSource current
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
∗1
∗1
∗2
Limits
Tr1 : Nch Tr2 : Pch
1.25
0.9
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
100
Rth (ch-a)
∗
139
zDimensions (Unit : mm)
TSMT6
1pin mark
Unit
−20
±12
±1.5
±6.0
−0.75
−6.0
V30
V±12
A±1.5
A±6.0
A0.8
A6.0
W / TOTAL
W / ELEMENT
°CTch
°CTstg
°C / W / TOTAL
°C / W / ELEMENT
2.9
1.9
0.950.95
(6)
(5)
(4)
(1)
(2)
(3)
0.4
Abbreviated symbol : M03
zEquivalent circuit
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
QS6M3
1.0MAX
0.85
0.7
2.8
1.6
0~0.1
0.6
~
0.3
0.16
Each lead has same dimensions
(4)
(5)
∗2 ∗2
∗1 ∗1
(2)
(1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
(3) Tr2 (Pch) Gate
(3)
(4) Tr2 (Pch) Drain
(5) Tr1 (Nch) Source
(6) Tr1 (Nch) Drain
Rev.B 1/7
Transistors
N-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter Symbol
Forward voltage
∗Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
V
SD
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
∗
Min.−Typ. Max.
−±10 µAVGS=±12V, VDS=0V
30 −−VID=1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 170 230 I
− 180 245 mΩ I
− 260 360 I
1.0 −−SI
− 80 − pF V
− 2515− pF V
−
7
−
18
−
15
−
15
−
1.6
−
0.5
−
0.9
−−nC I
Min. Typ. Max.
−−1.2 V IS=3.2A, VGS=0V
Unit
=30V, VGS=0V
DS
=10V, ID=1mA
DS
=1.5A, VGS=4.5V
D
=1.5A, VGS=4.0V
D
=1.0A, VGS=2.5V
D
=1.0A, VDS=10V
D
=10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
ID=1A, VDD 15V
V
=4.5V
GS
R
=15Ω
L
R
=10Ω
G
V
15V
DD
=4.5V
GS
=1.5A
D
Unit
Conditions
=10Ω
R
L
R
=10Ω
G
Conditions
QS6M3
Rev.B 2/7
Transistors
P-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter Symbol
Forward voltage
Min.−Typ. Max.
I
GSS
−±10 µAVGS= ±12V, VDS=0V
−20 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
−−−1 µAV
−0.7 −−2.0 V V
− 155 215 I
∗
− 170 235 mΩ I
− 310 430 I
∗
Y
1.0 −−SI
fs
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 270 − pF V
iss
− 4035− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
10
−
12
−
45
−
20
−
3.0
−
0.8
−
0.85
−−nC I
Min. Typ. Max.
V
−−−1.2 V IS= −0.75A, VGS=0V
SD
Unit
= −20V, VGS=0V
DS
= −10V, ID=1mA
DS
= −1.5A, VGS= −4.5V
D
= −1.5A, VGS= −4.0V
D
= −0.75A, VGS= −2.5V
D
= −0.75A, VDS= −10V
D
= −10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
= −0.75A, VDD −15V
I
D
V
= −4.5V
GS
R
=20Ω
L
R
=10Ω
G
V
−15V
DD
= −4.5V
GS
= −1.5A
D
Unit
Conditions
RL=10Ω
R
=10Ω
G
Conditions
QS6M3
Rev.B 3/7
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