ROHM QS6K21 Technical data
C
2.5V Drive Nch MOSFET
QS6K21
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low on-state resistance with fast switching.
2) Low voltage drive (2.5V).
zApplication zInner circuit
Switching
zPackaging specifications
Type
QS6K21
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
DSS
V
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Limits Unit
45
12
±1.0
∗1
±2.0
0.8
∗1
∗2
2.0
1.25
0.9
150
−55 to +150
zThermal resistance
Parameter Symbol Limits Unit
100
hannel to ambient
∗ When mounted on a ceramic board
Rth (ch-a)
∗
TSMT6
(6)
∗1 ESD protection diode
∗2 Body diode
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
°C / W / TOTAL
°C / W / ELEMENT139
(1)
1pin mark
∗2
2.9
1.9
0.950.95
(6)
(5)
(4)
(1)
(2)
0.4
Abbreviated symbol : K21
(5) (5)
∗1
(2) (3)
Each lead has same dimensions
1.0MAX
0.85
0.7
2.8
1.6
0.16
0~0.1
0.6
~
0.3
∗2
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
(3)
∗1
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2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.A
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
∗
Min.
Typ. Max.
−−10
45 −−VID=1mA, VGS=0V
−−1
0.5 − 1.5
− 300 420 I
− 310 435 mΩmΩID=1.0A, VGS=4.0V
− 415 585 mΩ ID=1.0A, VGS=2.5V
1.2 −−SV
− 95 −
− 20
−
−
−
−
−
−
−
−−
10
16
1.5
0.4
0.4
−
−
−
6
8
−
−
7
−
2.1
−
Min. Typ. Max.
−−1.2 VForward voltage IS= 0.8A, VGS=0V
Unit
µA
V
GS
µA
VDS=45V, VGS=0V
V
VDS=10V, ID=1mA
=1.0A, VGS=4.5V
D
DS
pF
VDS=10V
pF
VGS=0V
pF
f=1MHz
ns
VDD 25V
ID=0.5A
ns
GS
V
ns
L
R
ns
R
G
nC
V
DD
nC
VGS=4.5V
R
L
nC
Unit
Data Sheet QS6K21
Conditions
=12V, VDS=0V
=10V, ID=1A
=4.5V
50Ω
=10Ω
25V, ID=1.0A
25Ω, RG=10Ω
Conditions
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.A
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