Datasheet QS6K21 Datasheet (ROHM)

C

2.5V Drive Nch MOSFET

QS6K21

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low on-state resistance with fast switching.

2) Low voltage drive (2.5V).

zApplication zInner circuit

Switching

zPackaging specifications

Type

QS6K21

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS

V
V

GSS

I

D

I

DP

I

S

I

SP

P

D

Tch

Tstg

Limits Unit

45
12

±1.0

∗1

±2.0

0.8

∗1

∗2

2.0

1.25

0.9

150

−55 to +150

zThermal resistance

Parameter Symbol Limits Unit

100

hannel to ambient

∗ When mounted on a ceramic board

Rth (ch-a)

∗

TSMT6

(6)

∗1 ESD protection diode
∗2 Body diode

V
V
A
A
A
A

W / TOTAL

W / ELEMENT

°C
°C

°C / W / TOTAL

°C / W / ELEMENT139

(1)

1pin mark

∗2

2.9

1.9

0.950.95

(6)

(5)

(4)

(1)

(2)

0.4

Abbreviated symbol : K21

(5) (5)

∗1

(2) (3)

Each lead has same dimensions

1.0MAX

0.85

0.7

2.8

1.6

0.16

0~0.1

0.6

~

0.3

∗2

(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain

(3)

∗1

www.rohm.com

1/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter

Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−10

45 −−VID=1mA, VGS=0V

−−1

0.5 − 1.5

− 300 420 I

− 310 435 mΩmΩID=1.0A, VGS=4.0V

− 415 585 mΩ ID=1.0A, VGS=2.5V

1.2 −−SV

− 95 −

− 20

−

−

−

−

−

−

−

−−

10

16

1.5

0.4

0.4

−

−

−

6
8

−

−

7

−

2.1

−

Min. Typ. Max.

−−1.2 VForward voltage IS= 0.8A, VGS=0V

Unit

µA

V

GS

µA

VDS=45V, VGS=0V

V

VDS=10V, ID=1mA

=1.0A, VGS=4.5V

D

DS

pF

VDS=10V

pF

VGS=0V

pF

f=1MHz

ns

VDD 25V

ID=0.5A

ns

GS

V

ns

L

R

ns

R

G

nC

V

DD

nC

VGS=4.5V
R

L

nC

Unit

Data Sheet QS6K21

Conditions

=12V, VDS=0V

=10V, ID=1A

=4.5V
50Ω
=10Ω

25V, ID=1.0A

25Ω, RG=10Ω

Conditions

www.rohm.com

2/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.A

V

V

V

V

zElectrical characteristics curves

Data Sheet QS6K21

1

VGS= 10

0.8

[A]

D

0.6

0.4

DRAIN CURRENT : I

0.2

0

00.20.40.60.81

DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)

10000

Ta= 25°C
Pulsed

]

Ω

(on) [m

DS

1000

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

100

0.01 0.1 1 10

DRAIN-CURRENT : I

Fi g.4 Stat ic Dr ain- Source On- State

R esistance vs. D rain C urrent(Ⅰ)

VGS= 4.5
VGS= 4.0
VGS= 2.5

VGS= 1.8V

VGS= 1.5V

VGS= 2. 5V

= 4. 0V

V

GS

= 4. 5V

V

GS

[A]

D

Ta=25°C
Pulsed

1

0.8

[A]

D

0.6

0.4

DRAIN CURRENT : I

0.2

0

0246810

10000

VGS= 4.5V
Pulsed

]

Ω

(on)[m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.01 0.1 1 10

Fi g.5 Stat ic Dr ain- Source On- State

Resistance vs. Drain Current(Ⅱ)

VGS= 4.5V

= 2.5V

V

GS

VGS= 1. 8V

VGS= 1. 5V

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

DRAIN-CURRENT : ID[A]

Ta= 25°C
Pulsed

10

VDS= 10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

0.1

Ta= 25°C

DRAIN CURRENT : I

]

Ω

(on) [m

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

Ta= - 25°C

0.01

0.001

00.511.522.5

GATE-SOURCE VOLTAGE : VGS[V]

Fi g.3 T ypical Tran sfer C haracter isti cs

10000

VGS= 4. 0V
Pulsed

Ta= 125°C

DS

1000

100

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.6 Stat ic Dr ain- Source On- State

Resistance vs. Drain Curr ent(Ⅲ)

Ta= 75°C
Ta= 25°C
Ta= -25°C

10000

VGS= 2.5V
Pulsed

]

Ω

(on)[m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.7 Stat ic Dr ain- Source On- State

R esistance vs. D rain C urrent(Ⅳ)

Ta=125°C

Ta=75°C
Ta=25°C

Ta= -25°C

10

VDS= 10V
Pulsed

1

FOR WARD T RANSF ER

ADM ITTANCE : |Yfs | [S]

0.1

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.8 F orward T ransfer Admitta nce
vs. D rain Curr ent

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

10

VGS=0V
Pulsed

1

0.1

REVER SE DRAIN C URR ENT : Is [A]

0.01

00.511.5

SOUR CE-D RAIN VOLTAGE : VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse- Drain Voltag e

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= -25°C

www.rohm.com

3/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.A

F

it

%

V
V

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

V

zMeasurement circuits

1000

]

Ω

800

(ON)[m

DS

600

400

RESISTANCE : R

200

STATIC DRAIN- SOURCE ON -STATE

0

0246810

Fi g.10 Stati c Dr ain-Sour ce On-Stat e
Resistance vs. Gate Source Voltage

1000

Ta= 25°C
f=1M Hz
V

GS

100

10

CAPACITANCE : C [pF]

1

0.01 0.1 1 10 100

VGS

RG

ID= 0.5A

ID= 1.0A

GATE-SOUR CE VOLTAGE : VGS[V]

=0V

Crss

DRAIN-SOURCE VOLTAGE : V

Fi g.13 T ypical Capaci tance
vs. Drain-Source Voltag e

D

I

Ciss

Coss

VDS

RL

D.U.T.

VDD

Ta=25°C
Pulsed

[V]

DS

1000

td(off)

t

100

10

SWITC HING TIME : t [ns]

1

0.01 0.1 1 10

Fig.11 Switching Characteristics

f

td(on)

DRAIN-CURRENT : ID[A]

t

r

Pulse Width

50%

10%

GS
DS

10% 10

90%

90% 90%

t

d(on)

t

on

t

t

r

d(off)

Ta=25°C

= 25V

V

DD

=4.5V

V

GS

=10Ω

R

G

Pulsed

50%

t

off

Data Sheet QS6K21

5

[V]

GS

4

3

2

1

GATE-SOU RCE VOLTAGE : V

0

0 0.5 1 1.5 2

TOTAL GATE CHARGE : Qg [nC]

Fi g.12 Dynamic Input Charac teris tics

t

f

Ta=25°C
V

= 25V

DD

= 1.0A

I

D

=10Ω

R

G

Puls ed

ig.1-1 Switching Time Measurement Circu

V

GS

I

(Const.)

G

R

G

www.rohm.com

4/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

D

I

D.U.T.

V

DS

R

L

V

DD

Fig.1-2 Switching Waveforms

V

G

Q

g

GS

Q

gs

Q

gd

Charge

2009.03 - Rev.A

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.

www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

R0039

A