ROHM QS6K1 Technical data

Transistors

2.5V Drive Nch+Nch MOS FET

QS6K1

zStructure

Silicon N-channel
MOS FET

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (TSMT6).

zApplicat ion

Power switching, DC / DC converter .

zExternal dimensions (Unit : mm)

TSMT6

2.9

1.9

0.950.95

(6)

(5)

(4)

1.6

(2)

(1)

1pin mark

Abbreviated symbol : K01

(3)

0.4

Each lead has same dimensions

2.8

1.0MAX

0.85

0.7

0.16

0~0.1

0.6

~

0.3

QS6K1

zPackaging specifications

Type

QS6K1

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and T r2>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation (T

Channel temperature
Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

=25°C)

C

Symbol

DSS
GSS

D

DP

S

SP

P

D

∗1

∗1

∗2

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ Mounted on a ceramic board

Rth (ch-a)

Limits Unit

30
12

±1.0
±4.0

0.8

4.0

1.25

0.9

∗

W / ELEMENT

100

139

VV
VV
AI
AI
AI
AI

W / TOTAL

°CTch 150
°CTstg −55 to +150

°C / W / TOTAL

°C / W / ELEMENT

zEquivalent circuit

(6) (4)(5)

∗2 ∗2

∗1

∗1

(1) (3)(2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗A protection diode is included between the gate and

the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.

(6) (5) (4)

(1)

(2) (3)

(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain

Rev.B 1/3

QS6K1

Transistors

zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and T r2>

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-Drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and T r2>

Forward voltage

∗Pulsed

Rev.B 2/3

Parameter Symbol

I

GSS

V

(BR) DSS

I

DSS

V

GS (th)

R

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

Parameter Symbol

V

SD

Min.−Typ. Max.

Unit

− 10 µAVGS=12V, VDS=0V

30

−−VI

−

− 1 µAV

0.5Gate threshold voltage

− 1.5 V V

−

∗

∗

∗

∗

∗

∗

∗

∗

∗

170 238 I

−

180 252 mΩ I

−

260 364 I

1.0

−−SI

−

77 − pF V

−

2515− pF V

−

7

−

−

7

15

−

6

−

1.7

−

0.4

−

0.4

−

− pF f=1MHz

− ns

− ns

− ns

− ns

2.4 nC

− nC V

− nC I

Min. Typ. Max.

∗

−−1.2 V IS=3.2A, VGS=0V

=1mA, VGS=0V

D

DS
DS

=1.0A, VGS=4.5V

D

=1.0A, VGS=4.0V

D

=1.0A, VGS=2.5V

D

=1.0A, VDS=10V

D

DS
GS

I

=500mA, VDD 15V

D

V

GS

R

L

R

G

V

DD
GS

=1.0A

D

Unit

=30.0Ω

=10Ω

Conditions

=30V, VGS=0V
=10V, ID=1mA

=10V
=0V

=4.5V

15V
=4.5V

Conditions