ROHM QS6J3 Schematic [ru]
QS6J3
Transistors
2.5V Drive Pch+Pch MOS FET
QS6J3
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
zFeatures
1) Two Pch MOS FET transistors in a single
TSMT6 package.
2) Low on-state resistance with a fast switching.
3) Low voltage drive (2.5V).
zApplications zInner circuit
Switching
zPackaging specifications
Type
QS6J3
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and T r2 >
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol
DSS
GSS
D
DP
S
SP
P
D
∗1
∗1
∗2
−55 to +150
zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient
∗ Mounted on a ceramic board
Rth (ch-a)
∗
Rev.A 1/4
TSMT6
1pin mark
(6)
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits Unit
−20
±12
±1.5
±6.0
−0.75
−6.0
1.25
VV
VV
AI
AI
AI
AI
W / TOTAL
W / ELEMENT0.9
150
°CTch
°CTstg
100
°C / W / TOTAL
°C / W / ELEMENT139
2.9
1.9
0.950.95
(6)
(5)
(4)
2.8
(1)
Abbreviated symbol : J03
(5)
(2)
1.6
(2)
(3)
0.4
Each lead has same dimensions
∗1
(3)
1.0MAX
0.85
0.7
0~0.1
0.16
(4)
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
0.6
~
0.3
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and T r2. MOS FET>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
V
(BR) DSS
V
R
Min.
Typ. Max.
I
GSS
−−±10 µAV
−20 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
−−−1 µAVDS= −20V, VGS=0V
−0.7 −−2.0 V VDS= −10V, ID= −1mA
− 155 215 I
∗
− 170 235 mΩ
− 310 430 I
∗
1.0 −−SV
Y
fs
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 270 − pF VDS= −10V
iss
− 4035− pF VGS=0V
oss
−
rss
∗
−
∗
t
r
−
∗
−
∗
t
−
f
∗
−
g
∗
−
gs
∗
−−nC
gd
0.85
− pF f=1MHz
10
− ns
12
− ns
45
− ns
20
− ns
3.0
− nC
0.8
− nC VGS= −4.5V
<Body diode (Source-drain)>
Parameter Symbol
Min. Typ. Max.
V
SD
−−−1.2 V IS= −0.75A, VGS=0VForward voltage
Unit
=±12V, VDS=0V
GS
= −1.5A, VGS= −4.5V
mΩ
D
= −1.5A, VGS= −4V
I
D
= −0.75A, VGS= −2.5V
mΩ
D
= −10V, ID= −0.75A
DS
ID= −0.75A
V
DD
GS
= −4.5V
V
R
L
=20Ω
R
G
=10Ω
−15V
V
DD
I
= −1.5A
D
Unit
−15
Conditions
V
L
=10Ω
R
R
G
=10Ω
Conditions
QS6J3
Rev.A 2/4
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