ROHM QS5Y1 Technical data
Data Sheet
Midium Power Transistors (±30V / ±3A)
QS5Y1
Structure Dimensions (Unit : mm)
PNP/NPN Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
V
V
= -0.40V (Max.) (IC / IB= -1A / -50mA)
CE (sat)
= 0.40V (Max.) (IC / IB= 1A / 50mA)
CE (sat)
2) High speed switching
Applications
Low Frequency Amplifier
Driver
TSMT5
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
Abbreviated symbol : Y01
Packaging specifications
Package TSMT5
Type
Code TR
Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta = 25C)
<Tr.1>
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
<Tr.2>
DC I
Pulsed I
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
Inner circuit (Unit : mm)
(4)(5)
Tr.1 Tr.2
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
*1
*1
-30 V
-30 V
-6 V
-3 A
-6 A
30 V
30 V
6V
3A
6A
CBO
CEO
V
EBO
C
CP
CBO
CEO
V
EBO
C
CP
(2) (3)
(1)
<Tr.1 and Tr.2>
Parameter
Symbol Limits Unit
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
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*2
P
D
P
D
P
D
j
stg
0.5 W/Total
*3
1.25 W/Total
*3
0.9 W/Element
150 C
-55 to 150 C
1/7
2011.02 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y1
_
_
Electrical characteristics (Ta=25°C)
<Tr.1>
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
-30 - - V
-30 - - V
-6 - - V
---1
---1
*1
- -200 -400 mV
200 - 500 -
*1
-
-26Collector output capacitance
-35-ns
*2
- 210 - ns
*2
-15-ns
*2
f
A
A
MHz300 -
-
pF
ConditionsParameter
= -1mA
I
C
= -100μA
I
C
= -100μA
I
E
= -30V
V
CB
= -4V
V
EB
=-1A, IB=-50mA
I
C
= -2V, IC= -500mA
V
CE
= -10V
V
CE
I
=100mA, f=100MHz
E
= -10V, IE=0A
V
CB
f=1MHz
I
= -1.5A, IB1= -150mA,
C
I
=150mA, V
B2
CC
~
-12V
<Tr.2>
Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
f
30 - - V
30 - - V
6--V
--1
--1
*1
- 200 400 mV
200 - 500 -
*1
- 270 - MHz
-16
-25-ns
*2
- 300 - ns
*2
-20-ns
*2
-pF
A
A
= 1mA
I
C
= 100μA
I
C
= 100μA
I
E
= 30V
V
CB
= 4V
V
EB
= 1A, IB= 50mA
I
C
= 2V, IC= 500mA
V
CE
= 10V
V
CE
I
=-100mA, f=100MHz
E
= 10V, IE=0A
V
CB
f=1MHz
I
= 1.5A, IB1= 150mA,
C
I
=-150mA, V
B2
CC
~
12V
2/7
2011.02 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y1
Electrical characteristic curves (Ta=25C)
〈Tr.1〉
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
-2.0-1.5-1.0-0.50.0
COLLECTOR CURRENT :I
C
[A]
COLECTOR TO EMITTER VOLTAGE:VCE[V]
Fig.1 Typical Output Characteristics
-2.5mA
-2.0mA
-1.5mA
-1.0mA
IB=-0.5mA
-5.0mA
Ta=25℃
10
100
1000
-1 -10 -100 -1000 -10000
DC CURRENT GAIN :h
FE
COLLECTOR CURRENT :IC[mA]
Fig.2 DC Current Gain vs. Collector Current (Ⅰ)
Ta=25℃
VCE=-5V
-2V
10
100
1000
-1 -10 -100 -1000 -10000
DC CURRENT GAIN :h
FE
COLLECTOR CURRENT :IC[mA]
Fig.3 DC Current Gain vs. Collector Current(Ⅱ)
VCE=-2V
Ta=125°C
75°C
25°C
-40°C
-0.001
-0.01
-0.1
-1
-1 -10 -100 -1000 -10000
COLLECTOR SATURATION VOLTAGE :V
CE
(sat)[V]
COLLECTOR CURRENT :IC[mA]
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)
Ta=25°C
Pulsed
IC/IB=50
20
10
-0.01
-0.1
-1
-1 -10 -100 -1000 -10000
COLLECTOR SATURATION VOLTAGE :V
CE
(sat)[V]
COLLECTOR CURRENT :IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs.Collector Current (Ⅱ)
IC/IB=20
Pulsed
Ta=125°C
75°C
25°C
-40°C
-1
-10
-100
-1000
-10000
-1.4-1.2-1-0.8-0.6-0.4-0.20
COLLECTOR CURRENT :I
C
[mA]
BASE TO EMITTER VOLTAGE :VBE[V]
Fig.6 Ground Emitter Propagation Characteristics
VCE=-2V
Ta=125°C
75°C
25°C
-40°C
3/7
2011.02 - Rev.A
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