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QS5Y1
Technical data
8 pgs1.16 Mb0

ROHM QS5Y1 Technical data

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Data Sheet
Midium Power Transistors (±30V / ±3A)
QS5Y1
Structure Dimensions (Unit : mm)
PNP/NPN Silicon epitaxial planar transistor
1) Low saturation voltage, typically V
V
= -0.40V (Max.) (IC / IB= -1A / -50mA)
CE (sat)
= 0.40V (Max.) (IC / IB= 1A / 50mA)
CE (sat)
2) High speed switching
Applications
Low Frequency Amplifier Driver
TSMT5
(1) Tr.1 Base (2) Emitter (3) Tr.2 Base (4) Tr.2 Collector (5) Tr.1 Collector
Abbreviated symbol : Y01
Packaging specifications
Package TSMT5
Type
Code TR Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta = 25C)
　<Tr.1>
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
　<Tr.2>
DC I Pulsed I
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I Pulsed I
Inner circuit (Unit : mm)
(4)(5)
Tr.1 Tr.2
(1) Tr.1 Base (2) Emitter (3) Tr.2 Base (4) Tr.2 Collector (5) Tr.1 Collector
*1
*1
-30 V
-30 V
-6 V
-3 A
-6 A
30 V
30 V
6V
3A 6A
CBO
CEO
V
EBO
C
CP
CBO
CEO
V
EBO
C
CP
(2) (3)
(1)
　<Tr.1 and Tr.2>
Parameter
Symbol Limits Unit
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
*2
P
D
P
D
P
D
j
stg
0.5 W/Total
*3
1.25 W/Total
*3
0.9 W/Element
150 C
-55 to 150 C
1/7
2011.02 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y1
_
_
Electrical characteristics (Ta=25°C)
　<Tr.1>
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
-30 - - V
-30 - - V
-6 - - V
---1
---1
*1
- -200 -400 mV
200 - 500 -
*1
-
-26Collector output capacitance
-35-ns
*2
- 210 - ns
*2
-15-ns
*2
f
A
A
MHz300 -
-
pF
ConditionsParameter
= -1mA
I
C
= -100μA
I
C
= -100μA
I
E
= -30V
V
CB
= -4V
V
EB
=-1A, IB=-50mA
I
C
= -2V, IC= -500mA
V
CE
= -10V
V
CE
I
=100mA, f=100MHz
E
= -10V, IE=0A
V
CB
f=1MHz
I
= -1.5A, IB1= -150mA,
C
I
=150mA, V
B2
CC
~
-12V
　<Tr.2>
Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
f
30 - - V
30 - - V
6--V
--1
--1
*1
- 200 400 mV
200 - 500 -
*1
- 270 - MHz
-16
-25-ns
*2
- 300 - ns
*2
-20-ns
*2
-pF
A
A
= 1mA
I
C
= 100μA
I
C
= 100μA
I
E
= 30V
V
CB
= 4V
V
EB
= 1A, IB= 50mA
I
C
= 2V, IC= 500mA
V
CE
= 10V
V
CE
I
=-100mA, f=100MHz
E
= 10V, IE=0A
V
CB
f=1MHz
I
= 1.5A, IB1= 150mA,
C
I
=-150mA, V
B2
CC
~
12V
2/7
2011.02 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y1
Electrical characteristic curves (Ta=25C)
〈Tr.1〉
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
-2.0-1.5-1.0-0.50.0
COLLECTOR CURRENT :I
C
[A]
COLECTOR TO EMITTER VOLTAGE:VCE[V]
Fig.1 Typical Output Characteristics
-2.5mA
-2.0mA
-1.5mA
-1.0mA
IB=-0.5mA
-5.0mA
Ta=25℃
10
100
1000
-1 -10 -100 -1000 -10000
DC CURRENT GAIN :h
FE
COLLECTOR CURRENT :IC[mA]
Fig.2 DC Current Gain vs. Collector Current (Ⅰ)
Ta=25℃
VCE=-5V
-2V
10
100
1000
-1 -10 -100 -1000 -10000
DC CURRENT GAIN :h
FE
COLLECTOR CURRENT :IC[mA]
Fig.3 DC Current Gain vs. Collector Current(Ⅱ)
VCE=-2V
Ta=125°C
75°C 25°C
-40°C
-0.001
-0.01
-0.1
-1
-1 -10 -100 -1000 -10000
COLLECTOR SATURATION VOLTAGE :V
CE
(sat)[V]
COLLECTOR CURRENT :IC[mA]
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)
Ta=25°C Pulsed
IC/IB=50
20 10
-0.01
-0.1
-1
-1 -10 -100 -1000 -10000
COLLECTOR SATURATION VOLTAGE :V
CE
(sat)[V]
COLLECTOR CURRENT :IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs.Collector Current (Ⅱ)
IC/IB=20 Pulsed
Ta=125°C
75°C 25°C
-40°C
-1
-10
-100
-1000
-10000
-1.4-1.2-1-0.8-0.6-0.4-0.20
COLLECTOR CURRENT :I
C
[mA]
BASE TO EMITTER VOLTAGE :VBE[V]
Fig.6 Ground Emitter Propagation Characteristics
VCE=-2V
Ta=125°C
75°C 25°C
-40°C
3/7
2011.02 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y1
1
10
100
1000
-0.1 -1 -10 -100
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
Ta=25°C f=1MHz I
E
=0A
IC=0A
Cob
Cib
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Collector output capacitance vs.Collector-Base Voltage
10
100
1000
10 100 1000
TRANSITION FREQUENCY :f
T
[MHz]
EMITTER CURRENT :IE[mA]
Ta=25°C V
CE
=-
10V
Pulsed
Fig8. Gain Bandwidth Product vs. Emitter Current
-0.001
-0.01
-0.1
-1
-10
-0.1 -1 -10 -100
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE :VCE(V)
Fig9. Safe Operating Area
DC
(Mounted on a recommended land)
10ms
1ms
100ms
Ta=25°C When one element operated
Single non repetitive pulse
4/7
2011.02 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y1
〈Tr.2〉
0.0
0.1
0.2
0.3
0.4
0.5
0 0.5 1 1.5 2
COLLECTOR CURRENT : I
C
[A]
COLECTOR TO EMITTER VOLTAGE :VCE[V]
Fig.1 Typical Output Characteristics
2mA
1.5mA
1.0mA
IB=0.5mA
5mA
2.5mA
Ta=25℃
10
100
1000
1 10 100 1000 10000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs. Collector Current ( I )
VCE=5V
2V
Ta=25℃
10
100
1000
1 10 100 1000 10000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs. Collector Current ( II )
VCE=2V
Ta=125°C
75°C 25°C
-40°C
0.001
0.01
0.1
1
1 10 100 1000 10000
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
COLLECTOR CURRENT : IC[mA]
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
Ta=25℃ Pulsed
IC/IB=50
20 10
0.001
0.01
0.1
1
1 10 100 1000 10000
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
IC/IB=20 Pulsed
Ta=125°C
75°C 25°C
-40°C
1
10
100
1000
10000
0 0.2 0.4 0.6 0.8 1 1.2 1.4
COLLECTOR CURRENT : I
C
[mA]
BASE TO EMITTER VOLTAGE : VBE[V]
VCE=2V
Fig.6 Ground Emitter Propagation Characteristics
Ta=125°C
75°C 25°C
-40°C
5/7
2011.02 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y1
1
10
100
1000
0.1 1 10 100
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage
Ta=25°C f=1MHz I
E
=0A
IC=0A
Cob
Cib
10
100
1000
-10 -100 -1000
TRANSITION FREQUENCY : f
T
[MHz]
EMITTER CURRENT : IE[mA]
Ta=25°C VCE=10V
Pulsed
Fig.8 Gain Bandwidth Product vs. Emitter Current
0.001
0.01
0.1
1
10
0.1 1 10 100
COLLECTOR CURRENT : I
C
[A]
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
10ms
1ms
100ms
DC
(Mounted on a recommended land)
Ta=25°C When one element operated
Single non repetitive pulse
6/7
2011.02 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y1
_
_
w
f
_
_
Switching time test circuit
　<Tr.1>
V
IN
Pw
~
Pw 50μs
DUTY CYCLE≦1%
BASE CURRENT WAVEFORM
COLLECTOR CURRENT WAVEFORM
90%
RL=8.2Ω
I
B1
I
B2
t
on
t
stg
I
C
VCC -12V
~
I
B2
I
B1
t
f
I
C
　<Tr.2>
V
IN
Pw 50μs
P
DUTY CYCLE≦1%
BASE CURRENT WAVEFORM
COLLECTOR CURRENT WAVEFORM
~
90%
10%
t
on
=8.2Ω
R
L
B1
I
C
I
IB2
B1
I
I
B2
t
t
stg
IC
V
12V
~
CC
10%
7/7
2011.02 - Rev.A
Notes
Notice
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