ROHM QS5W2 Technical data
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©2010 ROHM Co., Ltd. All rights reserved.
Midium Power Transistors (50V / 3A)
QS5W2
Structure Dimensions (Unit : mm)
NPN Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
V
= 0.35V (Max.) (IC / IB= 1A / 50mA)
CE (sat)
2) High speed switching
Applications
Driver
TSMT5
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol : W02
Packaging specifications
Package TSMT5
Type
Code TR
Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for the Tr.1 and Tr.2>
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
CBO
CEO
EBO
C
*1
CP
*2
P
D
P
D
P
D
j
stg
0.5 W/Total
*3
1.25 W/Total
*3
0.9 W/Element
150 C
-55 to 150 C
50 V
50 V
6V
3A
6A
Inner circuit (Unit : mm)
Tr.1 Tr.2
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
(1)
(4)(5)
(2) (3)
1/5
2010.11 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
QS5W2
_
Electrical characteristics (Ta=25°C)
<It is the same ratings for the Tr.1 and Tr.2>
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
f
50 - - V
50 - - V
6--V
--1
--1
*1
- 130 350 mV
180 - 450 -
*1
-
-13Collector output capacitance
-50-ns
*2
- 450 - ns
*2
-80-ns
*2
-
A
A
MHz320 -
pF
ConditionsParameter
= 1mA
I
C
= 100μA
I
C
= 100μA
I
E
= 50V
V
CB
= 4V
V
EB
= 1A, IB= 50mA
I
C
= 3V, IC= 50mA
V
CE
= 10V
V
CE
I
=-500mA, f=100MHz
E
= 10V, IE=0A
V
CB
f=1MHz
I
= 1.5A, IB1= 150mA,
C
I
=-150mA, V
B2
CC
~
10V
2/5
2010.11 - Rev.A
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