ROHM QS5W1 Technical data
Data Sheet
Midium Power Transistors (30V / 3A)
QS5W1
Structure Dimensions (Unit : mm)
NPN Silicon epitaxial planar transistor
Features
1) Low saturation voltage
V
= 0.4V (Max.) (IC / IB= 1A / 50mA)
CE (sat)
2) High speed switching
Applications
Low Frequency Amplifier
Driver
TSMT5
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
Abbreviated symbol : W01
Packaging specifications
Package TSMT5
Type
Code TR
Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for the Tr.1 and Tr.2>
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
CBO
CEO
EBO
C
*1
CP
*2
P
D
P
D
P
D
j
stg
0.5 W/Total
*3
1.25 W/Total
*3
0.9 W/Element
150 C
-55 to 150 C
30 V
30 V
6V
3A
6A
Inner circuit (Unit : mm)
Tr.1 Tr.2
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
(1)
(4)(5)
(2) (3)
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.02 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5W1
_
Electrical characteristics (Ta=25°C)
<It is the same ratings for the Tr.1 and Tr.2>
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
f
30 - - V
30 - - V
6--V
--1
--1
*1
- 200 400 mV
200 - 500 -
*1
-
-16Collector output capacitance
-25-ns
*2
- 300 - ns
*2
-20-ns
*2
-
A
A
MHz270 -
pF
ConditionsParameter
= 1mA
I
C
= 100μA
I
C
= 100μA
I
E
= 30V
V
CB
= 4V
V
EB
= 1A, IB= 50mA
I
C
= 2V, IC= 500mA
V
CE
= 10V
V
CE
I
=-100mA, f=100MHz
E
= 10V, IE=0A
V
CB
f=1MHz
I
= 1.5A, IB1= 150mA,
C
I
=-150mA, V
B2
CC
~
12V
2/5
2011.02 - Rev.A
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