Data Sheet
Midium Power Transistors (30V / 3A)
QS5W1
Structure Dimensions (Unit : mm)
NPN Silicon epitaxial planar transistor
Features
1) Low saturation voltage
V
= 0.4V (Max.) (IC / IB= 1A / 50mA)
CE (sat)
2) High speed switching
Applications
Low Frequency Amplifier
Driver
TSMT5
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
Abbreviated symbol : W01
Packaging specifications
Package TSMT5
Type
Code TR
Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for the Tr.1 and Tr.2>
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
CBO
CEO
EBO
C
*1
CP
*2
P
D
P
D
P
D
j
stg
0.5 W/Total
*3
1.25 W/Total
*3
0.9 W/Element
150 C
-55 to 150 C
30 V
30 V
6V
3A
6A
Inner circuit (Unit : mm)
Tr.1 Tr.2
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
(1)
(4)(5)
(2) (3)
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2011.02 - Rev.A
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Data Sheet
QS5W1
_
Electrical characteristics (Ta=25°C)
<It is the same ratings for the Tr.1 and Tr.2>
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
f
30 - - V
30 - - V
6--V
--1
--1
*1
- 200 400 mV
200 - 500 -
*1
-
-16Collector output capacitance
-25-ns
*2
- 300 - ns
*2
-20-ns
*2
-
A
A
MHz270 -
pF
ConditionsParameter
= 1mA
I
C
= 100μA
I
C
= 100μA
I
E
= 30V
V
CB
= 4V
V
EB
= 1A, IB= 50mA
I
C
= 2V, IC= 500mA
V
CE
= 10V
V
CE
I
=-100mA, f=100MHz
E
= 10V, IE=0A
V
CB
f=1MHz
I
= 1.5A, IB1= 150mA,
C
I
=-150mA, V
B2
CC
~
12V
2/5
2011.02 - Rev.A
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Data Sheet
QS5W1
Electrical characteristic curves (Ta=25C)
0.0
0.1
0.2
0.3
0.4
0.5
0 0.5 1 1.5 2
COLLECTOR CURRENT : I
C
[A]
COLECTOR TO EMITTER VOLTAGE :VCE[V]
Fig.1 Typical Output Characteristics
2mA
1.5mA
1.0mA
IB=0.5mA
5mA
Ta=25°C
2.5mA
10
100
1000
1 10 100 1000 10000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs. Collector Current ( I )
VCE=5V
2V
Ta=25°C
10
100
1000
1 10 100 1000 10000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs. Collector Current ( II )
VCE=2V
Ta=125°C
75°C
25°C
-40°C
0.001
0.01
0.1
1
1 10 100 1000 10000
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
COLLECTOR CURRENT : IC[mA]
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
Ta=25°C
Pulsed
IC/IB=50
20
10
0.001
0.01
0.1
1
1 10 100 1000 10000
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
IC/IB=20
Pulsed
Ta=125°C
75°C
25°C
-40°C
1
10
100
1000
10000
0 0.2 0.4 0.6 0.8 1 1.2 1.4
COLLECTOR CURRENT : I
C
[mA]
BASE TO EMITTER VOLTAGE : VBE[V]
VCE=2V
Fig.6 Ground Emitter Propagation Characteristics
Ta=125°C
75°C
25°C
-40°C
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2011.02 - Rev.A
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Data Sheet
QS5W1
1
10
100
1000
0.1 1 10 100
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Ta=25°C
f=1MHz
I
E
=0A
IC=0A
Cob
Cib
10
100
1000
-10 -100 -1000
TRANSITION FREQUENCY : f
T
[MHz]
EMITTER CURRENT : IE[mA]
Ta=25°C
VCE=10V
Pulsed
Fig.8 Gain Bandwidth Product vs. Emitter Current
0.001
0.01
0.1
1
10
0.1 1 10 100
COLLECTOR CURRENT : I
C
[A]
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
DC
(Mounted on a recommended land)
10ms
1ms
100ms
Ta=25°C
When one element operated
Single non repetitive pulse
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2011.02 - Rev.A
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Data Sheet
QS5W1
w
f
_~_
Switching time test circuit
V
P
BASE CURENT WAVEFORM
RL=8.2Ω
I
IN
Pw 50μs
DUTY CYCLE≦1%
B1
I
C
I
B2
I
B1
VCC12V
~
COLLECTOR CURRENT
WAVEFORM
90%
10%
I
B2
t
on
t
t
stg
I
C
5/5
2011.02 - Rev.A
Notes
Notice
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