Transistors
s
1.5V Drive Nch+SBD MOSFET
QS5U36
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U36 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast sw itching.
3) Low voltage drive (1.5V).
4) The Independently connected Schottky barrier diode
has low fo rward voltage.
zApplications
Switchi ng
zPackaging specifications
Type
QS5U36
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zDimension
TSMT5
zEquivalent circuit
∗1 ESD protection diode
∗2 Body diode
(Unit : mm)
Abbreviated symbol : U36
(5)
∗1
(1) (2)
QS5U36
Each lead has same dimensions
(4)
∗2
(1)Gate
(2)Source
(3)Anode
(3)
(4)Cathode
(5)Drain
1/5
Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
zElectrical characteristics (T a=25°C)
<MOSFET>
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<MOSFET>Body diode (source-drain)
Forward voltage
∗Pulsed
<Di>
Forward voltage
Reverse current
Continuous
Pulsed
Continuous
Pulsed
•
1cyc. ∗3 Mounted on a ceramic board
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
∗
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
∗
t
d (on)
∗
t
r
∗
t
d (off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
∗
V
SD
V
F
I
R
Symbol
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
D
P
V
RM
V
R
I
F
∗2
I
FSM
Tj
∗3
D
P
∗3
P
D
Tstg
Min.
Typ. Max.
−−±10
Limits Unit
20
±10
±2.5
±5.0
0.7
5.0
0.9
150
0.7
1.25
−55 to +150
Unit
µA
V
GS
V
V
A
A
A
A
°C
W/ELEMENT
V25
V20
A0.7
A3.0
°C
W/ELEMENT
W / TOTAL
°C
Conditions
=±10V / VDS=0V
20 −−VID=1mA, / VGS=0V
−−1
0.3 − 1.3
− 58 81 I
− 74 104 mΩ
µA
VDS=20V / VGS=0V
V
VDS=10V / ID=1mA
=2.5A, VGS=4.5V
mΩ
D
ID=2.5A, VGS=2.5V
− 95 133 mΩ ID=1.3A, VGS=1.8V
=0.5A, VGS=1.5V
− 120 240 I
2.7 −−SV
− 280 −
− 65
35
−
6
−
15
−
−
30
15
−
3.5
−
−
0.8
−−
0.7
−−
mΩ
−
−
−
−
−
−
−
−
1.2 V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
D
=10V, ID=2.5A
DS
VDS=10V
VGS=0V
f=1MHz
ID=1.3A
V
DD
10V
V
GS
=4.5V
R
L
7.7Ω
R
G
=10Ω
=2.5A,
D
V
DD
I
VGS=4.5V
L
4Ω, RG=10Ω
R
I
=0.7A / VGS=0V
S
10V
−−0.49 V IF=0.7A
−−200 µAVR=20V
QS5U36
2/5
Transistors
zElectrical characteristic curves
<MOSFET>
1000
Ta=25°C
f=1MHz
GS
=0V
V
Ciss
1000
100
QS5U36
6
Ta=25°C
DD
=10V
V
GS
=4.5V
V
G
=10Ω
R
tf
Pulsed
(V)
GS
5
4
Ta=25°C
DD
=10V
V
D
=2.5A
I
G
=10Ω
R
Pulsed
100
CAPACITANCE : C (pF)
10
0.01
10.1 10 100
Coss
Crss
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
(A)
D
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
DRAIN CURRENT : I
0.01
0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V)
VDS=10V
Pulsed
Fig.4 Typical Transfer Characteristics
1000
(mΩ)
DS (on)
100
VGS=1.5V
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
Ta=25°C
Pulsed
td(off)
10
td(on)
SWITCHING TIME : t (ns)
1
0.01
tr
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
125
(mΩ)
100
DS(on)
75
50
25
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
01
ID=2.5A
ID=1.3A
23 10456789
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-source Voltage
1000
Ta=125°C
(mΩ)
Ta=75°C
Ta=25°C
DS (on)
Ta=−25°C
100
Ta=25°C
Pulsed
VGS=1.5V
Pulsed
3
2
1
GATE-SOURCE VOLTAGE : V
0
0
12345
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
(A)
S
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
SOURCE CURRENT : I
0.01
0.0
0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
(mΩ)
DS (on)
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
VGS=1.8V
Pulsed
VGS=0V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01 0.1
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
110
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01 0.1
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
110
0.01 0.1
110
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
3/5
Transistors
1000
(mΩ)
DS (on)
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
VGS=2.5V
Pulsed
QS5U36
1000
(mΩ)
Ta=125°C
DS (on)
Ta=75°C
Ta=25°C
Ta=−25°C
100
VGS=4.5V
Pulsed
10
1
Yfs (S)
VDS=10V
Pulsed
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01 0.1
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι )
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
110
10
0.01 0.1
110
DRAIN CURRENT : ID (A)
Fig.11 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
FORWARD TRANSFER ADMITTANCE
0.1
0.01 0.1
DRAIN CURRENT : −ID (A)
110
Fig.12 Forward Transfer Admittance
vs. Drain Current
100000
REVERSE CURRENT : IR [uA]
pulsed
10000
1000
100
10
1
0.1
0.01
0 5 10 15 20 25
REVERSE VOLTAGE : VR [V]
Fig.13 Reverse Current vs. Reverse Voltage
Ta = 125
Ta = 75
Ta = 25
Ta= - 25
℃
℃
℃
℃
1
pulsed
(A)
F
0.1
Ta = 125
Ta = 75
Ta = 25
0.01
Ta= - 25
FORWARD CURRENT : I
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6
FORWA RD VOLTAGE : VF(V)
Fig.14 Forward Current vs. Forward Voltage
℃
℃
℃
℃
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V
characteristics and therefore, higher leak current. Please consider enough the
F
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
4/5
Transistors
zMeasurement circuit
QS5U36
Pulse Width
V
GS
R
G
D
I
D.U.T.
V
DS
GS
R
L
V
DD
V
V
DS
t
50%
10%
10% 10%
d(on)
t
on
90%
50%
90% 90%
t
t
r
d(off)
t
f
t
off
Fig.15 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
D
I
D.U.T.
VDS
RL
VDD
Fig.17 Gate Charge Measurement Circuit
Fig.16 Switching Waveforms
V
G
Q
g
V
GS
QgsQ
gd
Charge
Fig.18 Gate Charge Waveform
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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