ROHM QS5U36 Technical data

Transistors

s

1.5V Drive Nch+SBD MOSFET

QS5U36

zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE

zFeatures

1) The QS5U36 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.

2) Low on-state resistance with fast sw itching.

3) Low voltage drive (1.5V).

4) The Independently connected Schottky barrier diode
has low fo rward voltage.

zApplications
Switchi ng

zPackaging specifications

Type

QS5U36

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zDimension

TSMT5

zEquivalent circuit

∗1 ESD protection diode
∗2 Body diode

(Unit : mm)

Abbreviated symbol : U36

(5)

∗1

(1) (2)

QS5U36

Each lead has same dimensions

(4)

∗2

(1)Gate
(2)Source
(3)Anode

(3)

(4)Cathode
(5)Drain

1/5

Transistors

zAbsolute maximum ratings (Ta=25°C)

<MOSFET>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Channel temperature

Power dissipation
<Di>

Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation

<MOSFET AND Di>
Total power dissipation
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

zElectrical characteristics (T a=25°C)

<MOSFET>

Parameter
Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

<MOSFET>Body diode (source-drain)

Forward voltage

∗Pulsed

<Di>
Forward voltage

Reverse current

Continuous
Pulsed
Continuous
Pulsed

•

1cyc. ∗3 Mounted on a ceramic board

Symbol

I

GSS

V

(BR) DSS

I

DSS

V

GS (th)

∗

R

DS (on)

∗

Y

fs

C

iss

C

oss

C

rss

∗

t

d (on)

∗

t

r

∗

t

d (off)

∗

t

f

∗

Q

g

∗

Q

gs

∗

Q

gd

∗

V

SD

V

F

I

R

Symbol

V

DSS

V

GSS

I

D

∗1

I

DP

I

S

∗1

I

SP

Tch 150

∗3

D

P

V

RM

V

R

I

F

∗2

I

FSM

Tj

∗3

D

P

∗3

P

D

Tstg

Min.

Typ. Max.

−−±10

Limits Unit

20

±10
±2.5
±5.0

0.7

5.0

0.9

150

0.7

1.25

−55 to +150

Unit

µA

V

GS

V
V
A
A
A
A

°C

W/ELEMENT

V25
V20
A0.7
A3.0

°C

W/ELEMENT

W / TOTAL

°C

Conditions

=±10V / VDS=0V

20 −−VID=1mA, / VGS=0V

−−1

0.3 − 1.3

− 58 81 I

− 74 104 mΩ

µA

VDS=20V / VGS=0V

V

VDS=10V / ID=1mA

=2.5A, VGS=4.5V

mΩ

D

ID=2.5A, VGS=2.5V

− 95 133 mΩ ID=1.3A, VGS=1.8V
=0.5A, VGS=1.5V

− 120 240 I

2.7 −−SV

− 280 −

− 65

35

−

6

−

15

−

−

30
15

−

3.5

−

−

0.8

−−

0.7

−−

mΩ

−

−

−

−

−

−

−

−

1.2 V

pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

D

=10V, ID=2.5A

DS

VDS=10V
VGS=0V
f=1MHz
ID=1.3A

V

DD

10V

V

GS

=4.5V

R

L

7.7Ω

R

G

=10Ω

=2.5A,

D

V

DD

I
VGS=4.5V

L

4Ω, RG=10Ω

R

I

=0.7A / VGS=0V

S

10V

−−0.49 V IF=0.7A

−−200 µAVR=20V

QS5U36

2/5