QS5U34
Transistors
1.8V Drive Nch+SBD MOSFET
QS5U34
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U34 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast sw itching.
3) Low voltage drive (1.8V).
4) The Independently connected Schottky barrier diode
has low forward voltag e.
zApplications
Load switch, DC / DC conversion
zPackaging specifications
Type
QS5U34
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
1/4
zDimensions (Unit : mm)
TSMT5
2.9
1.9
0.950.95
(5)
(4)
(3)(2)
(1)
0.4
Abbreviated symbol : U34
zEquivalent circuit
(5)
∗1
∗1 ESD protection diode
∗2 Body diode
(1) (2)
1.0MAX
0.85
0.7
2.8
1.6
0~0.1
0.6
~
0.3
0.16
Each lead has same dimensions
(4)
∗2
(1)Gate
(2)Source
(3)Anode
(3)
(4)Cathode
(5)Drain
Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
zElectrical characteristics (T a=25°C)
<MOSFET>
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<MOSFET>Body diode (source-drain)
Forward voltage
<Di>
Forward voltage
Reverse current
Continuous
Pulsed
Continuous
Pulsed
•
1cyc. ∗3 Mounted on a ceramic board
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
∗
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
∗
t
d (on)
∗
t
r
∗
t
d (off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
SD
V
V
F
I
R
Symbol
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
D
P
V
RM
V
R
I
F
∗2
I
FSM
Tj
∗3
D
P
∗3
P
D
Tstg
Min.
Typ. Max.
−−10
Limits Unit
20
10
±1.5
±3.0
0.6
2.4
0.9
150
0.7
1.25
−55 to +150
Unit
µA
V
GS
V
V
A
A
A
A
°C
W/ELEMENT
V30
V20
A0.5
A2.0
°C
W/ELEMENT
W / TOTAL
°C
Conditions
=10V / VDS=0V
20 −−VID=1mA, / VGS=0V
mΩ
mΩ
−
−
−
−
−
−
2.5
−
1.2 V
µA
VDS=20V / VGS=0V
V
VDS=10V / ID=1mA
=1.5A, VGS=4.5V
D
=1.5A, VGS=2.5V
I
D
=0.8A, VGS=1.8V
D
=10V, ID=1.5A
DS
pF
VDS=10V
pF
VGS=0V
pF
f=1MHz
ns
ID=1.0A
V
DD
ns
GS
=4.5V
V
ns
R
L
=10Ω
ns
R
G
=10Ω
nC
nC
nC
10V
V
DD
VGS=4.5V
ID=1.5A
I
=0.6A / VGS=0V
S
10V
−−1
0.3 − 1.3
− 130 180 I
− 170 240 mΩ
− 220 310 I
1.6 −−SV
− 110 −
− 18
15
−
5
−
5
−
20
−
3
−
1.8
−
0.3
−
0.3
−−
−−
−−0.36 V IF=0.1A
−−0.47 V IF=0.5A
−−100 µAVR=20V
QS5U34
2/4
Transistors
zElectrical characteristic curves
<MOSFET>
1000
Ta=25°C
f=1MHz
V
GS
=0V
100
CAPACITANCE : C (pF)
10
0.01
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
1
(A)
D
0.1
0.01
DRAIN CURRENT : I
0.001
0.0001
Ta=125°C
75°C
25°C
−25°C
0.50.0 1.0 1.5 2.0
GATE-SOURCE VOLTAGE : VGS (V)
VDS=10V
Pulsed
Fig.4 Typical Transfer Characteristics
1000
Ta=125°C
75°C
25°C
−25°C
DS (on) (mΩ)
VGS=1.8V
Pulsed
Ciss
Coss
Crss
1000
100
SWITCHING TIME : t (ns)
tf
10
td(on)
tr
1
0.01
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
500
450
(mΩ)
400
DS(on)
350
300
250
200
150
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
ID=1.5A
ID=0.8A
50
0
01
23 10456789
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-source Voltage
1000
(mΩ)
DS (on)
Ta=125°C
75°C
25°C
−25°C
td(off)
Ta=25°C
DD
V
V
GS
G
R
Pulsed
Ta=25°C
Pulsed
VGS=2.5V
Pulsed
5
(V)
GS
4
3
2
1
Ta=25°C
V
I
D
R
Pulsed
=10V
=4.5V
=10Ω
GATE-SOURCE VOLTAGE : V
0
0.0
Fig.3 Dynamic Input Characteristics
10
(A)
S
1
0.1
SOURCE CURRENT : I
0.01
0.0
1000
DS (on) (mΩ)
QS5U34
DD
=10V
=1.5A
G
=10Ω
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
TOTAL GATE CHARGE : Qg (nC)
VGS=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
VGS=4.5V
Ta=125°C
75°C
25°C
−25°C
Pulsed
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
DRAIN CURRENT : ID (A)
110
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
3/4
Transistors
1000
Ta=125 C
75 C
25 C
−25 C
100
[mA]
F
QS5U34
100
10
[mA]
R
1
125°C
75°C
10
Forward Current : I
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage :VF [V]
Fig.10 Forward Temperature Characteristics
0.1
0.01
Reverse Current : I
0.001
0.0001
010203040
Reverse Voltage : VR[V]
Fig.11 Reverse Temperature Characteristics
25°C
−25°C
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V
characteristics and therefore, higher leak current. Please consider enough the
F
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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