ROHM QS5U34 Technical data

QS5U34

Transistors

1.8V Drive Nch+SBD MOSFET

QS5U34

zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE

zFeatures

1) The QS5U34 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.

2) Low on-state resistance with fast sw itching.

3) Low voltage drive (1.8V).

4) The Independently connected Schottky barrier diode
has low forward voltag e.

zApplications
Load switch, DC / DC conversion

zPackaging specifications

Type

QS5U34

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

1/4

zDimensions (Unit : mm)

TSMT5

2.9

1.9

0.950.95

(5)

(4)

(3)(2)

(1)

0.4

Abbreviated symbol : U34

zEquivalent circuit

(5)

∗1

∗1 ESD protection diode
∗2 Body diode

(1) (2)

1.0MAX

0.85

0.7

2.8

1.6

0~0.1

0.6

~

0.3

0.16

Each lead has same dimensions

(4)

∗2

(1)Gate
(2)Source
(3)Anode

(3)

(4)Cathode
(5)Drain

Transistors

zAbsolute maximum ratings (Ta=25°C)

<MOSFET>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Channel temperature

Power dissipation
<Di>

Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation

<MOSFET AND Di>
Total power dissipation
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

zElectrical characteristics (T a=25°C)

<MOSFET>

Parameter
Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

<MOSFET>Body diode (source-drain)

Forward voltage

<Di>
Forward voltage

Reverse current

Continuous
Pulsed
Continuous
Pulsed

•

1cyc. ∗3 Mounted on a ceramic board

Symbol

I

GSS

V

(BR) DSS

I

DSS

V

GS (th)

∗

R

DS (on)

∗

Y

fs

C

iss

C

oss

C

rss

∗

t

d (on)

∗

t

r

∗

t

d (off)

∗

t

f

∗

Q

g

∗

Q

gs

∗

Q

gd

SD

V

V

F

I

R

Symbol

V

DSS

V

GSS

I

D

∗1

I

DP

I

S

∗1

I

SP

Tch 150

∗3

D

P

V

RM

V

R

I

F

∗2

I

FSM

Tj

∗3

D

P

∗3

P

D

Tstg

Min.

Typ. Max.

−−10

Limits Unit

20
10

±1.5
±3.0

0.6

2.4

0.9

150

0.7

1.25

−55 to +150

Unit

µA

V

GS

V
V
A
A
A
A

°C

W/ELEMENT

V30
V20
A0.5
A2.0

°C

W/ELEMENT

W / TOTAL

°C

Conditions

=10V / VDS=0V

20 −−VID=1mA, / VGS=0V

mΩ

mΩ

−

−

−

−

−

−

2.5

−

1.2 V

µA

VDS=20V / VGS=0V

V

VDS=10V / ID=1mA

=1.5A, VGS=4.5V

D

=1.5A, VGS=2.5V

I

D

=0.8A, VGS=1.8V

D

=10V, ID=1.5A

DS

pF

VDS=10V

pF

VGS=0V

pF

f=1MHz

ns

ID=1.0A

V

DD

ns

GS

=4.5V

V

ns

R

L

=10Ω

ns

R

G

=10Ω
nC
nC
nC

10V

V

DD

VGS=4.5V
ID=1.5A

I

=0.6A / VGS=0V

S

10V

−−1

0.3 − 1.3

− 130 180 I

− 170 240 mΩ

− 220 310 I

1.6 −−SV

− 110 −

− 18

15

−

5

−

5

−

20

−

3

−

1.8

−

0.3

−

0.3

−−

−−

−−0.36 V IF=0.1A

−−0.47 V IF=0.5A

−−100 µAVR=20V

QS5U34

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