Transistor
4V Drive Pch+SBD MOSFET
QS5U33
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U33 combines Pch MOSFET with
a Schottky barrier diode in TSMT5 package.
2) Low on-state resistance with fast sw itching.
3) Low voltage drive (4V).
4) Built-in schottky barrier diode has low forward voltage.
zApplications
Load switch, DC/DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U33
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
TSMT5
2.9
1.9
0.950.95
(5)
(4)
(3)(2)
(1)
0.4
Abbreviated symbol : U33
(5) (4)
∗2
∗1
(1) (2) (3)
∗1 ESD protection diode
∗2 Body diode
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
QS5U33
1.0MAX
0.85
0.7
2.8
1.6
0~0.1
0.6
~
0.3
0.16
Each lead has same dimensions
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
1/4
Transistor
zAbsolute maximum ratings (Ta=25°C)
<
MOSFET
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dispation
<
MOSFET AND Di
Total power dissipation
Range of strage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board.
zElectrical characteristics (T a=25°C)
<
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
>
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
P
∗1
∗1
∗3
Parameter Symbol Limits Unit
RM
R
F
∗2
FSM
∗3
P
D
Limits Unit
−30
±20
±2.0
±8.0
−0.75
−8.0
0.9
25
20
1.0
3.0
0.7
>
Parameter Symbol Limits Unit
∗3
P
D
1.25
>
Parameter Symbol
V
V
R
Min.
Typ. Max.
I
(BR) DSS
I
GS (th)
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
−−±10 µAV
GSS
−30 −−VID= −1mA, VGS= 0V
DSS
−−−1 µAVDS= −30V, VGS= 0V
−1.0 −−2.5 V VDS= −10V, ID= −1mA
− 95 135 mΩ I
∗
− 145 205 mΩ ID= −1A, VGS= −4.5V
− 160 225 mΩ I
∗
1.4 −−SV
Y
fs
iss
− 310 − pF VDS= −10V
oss
− 5545− pF VGS= 0V
rss
−
∗
∗
r
t
∗
f
t
∗
Q
g
∗
∗
gs
∗
gd
7
−
6
−
25
−
6
−
−
3.4
1.0
−
1.3
−−nC
VV
VV
AI
AI
AI
AI
°CTch 150
W/ELEMENT
VV
VV
AI
AI
°CTj 150
W/ELEMENT
W/TOTAL
°CTstg −55 to +150
Unit
GS
= ±20V, VDS= 0V
D
= −2A, VGS= −10V
D
= −1A, VGS= −4.0V
DS
= −10V, ID= −1A
− pF f=1MHz
V
− ns
− ns
− ns
− ns
− nC
− nC
DD
GS
V
D
= −1A
I
R
L
R
G
V
DD
V
GS
I
D
= −2A
L
R
G
R
= −10V
15Ω
10Ω
= −5V
7.5Ω
10Ω
QS5U33
Conditions
−15V
−15V
<
MOSFET> Body diode (Source-drain)
Parameter Symbol
Forward voltage
Min. Typ. Max.
SD
−− V
Unit
−1.2V
IS= −0.75V , VGS= 0V
Conditions
<Di>
Parameter Symbol
Forward voltage
Reverse current
2/4
Min. Typ. Max.
F
−− V
R
−− µA
Unit
0.45V
200I
IF= 1.0V
VR= 20V
Conditions
Transistor
zElectrical characteristic curves
10
1
Ta=125°C
75°C
25°C
−25°C
1.5
Gate−Source Voltage : −VGS[V]
2.0 2.5 3.0 3.5 4.0
Drain Current : −ID (A)
0.001
0.0001
0.1
0.01
0 0.5 1.0
Fig.1 Typical Transfer Characteristics
1000
100
Ta=125°C
(on)[mΩ]
DS
R
Static Drain−Source On−State Resistance
75°C
25°C
−25°C
10
0.1 1
Drain Current : −ID[A]
Fig.4 Static Drain−Source On−State
Resistance vs.Drain−Current
1000
100
Capacitance : C [pF]
VDS=−10V
Pulsed
VGS=−4.0V
Pulsed
Ta=25 C
f=1MHZ
V
QS5U33
1000
100
(on)[mΩ]
DS
R
Static Drain−Source On−State Resistance
10
Ta=125°C
75°C
25°C
−25°C
0.1 1
Drain Current : −ID[A]
VGS=−10V
Pulsed
Fig.2 Static Drain−Source On−State
Resistance
vs.Drain Current
400
350
I
D=−
300
250
200
(on)[mΩ]
DS
R
150
100
50
Static Drain−Source On−State Resistance
10
0
Fig.5 Static Drain−Source On−State
1000
GS
=0V
C
iss
C
C
rss
100
oss
10
Switching Time : t [ns]
1A
−2A
Gate−Source Voltage : −VGS[V]
vs.Gate−Source VoltageResistance
t
f
t
d(on)
100155
Ta=25 C
V
V
R
Pulsed
t
d(off)
Ta=25 C
Pulsed
DD
=−15V
GS
=−10V
G
=10Ω
t
r
1000
(on)[mΩ]
100
DS
R
Static Drain−Source On−State Resistance
10
10
0.1 1
Fig.3 Static Drain−Source On−State
Resistance
10
[A]
DR
1
0.1
Reverse Drain Current : −I
0.01
10
8
[V]
GS
6
4
2
Gate-Source Voltage: -V
Ta=125°C
75°C
25°C
−25°C
Drain Current : −ID[A]
vs.Drain Current
Ta=125°C
75°C
25°C
−25°C
0 0.5
Source−Drain Voltage : −V
1.0
Fig.6 Reverse Drain Current
vs. Source-Drain Current
Ta=25 C
V
DD
=−15V
I
D
=−1A
R
G
=10Ω
Pulsed
VGS=−4.5V
Pulsed
VGS=0V
Pulsed
SD
[V]
10
1.5
10
0.01 0.1 1 10 100
Drain−Source Voltage : −V
DS
[V]
Fig.7 Typical Capactitance
vs.Drain−Source Voltage
1
0.01 0.1 1 10
D
Drain Current : −I
[A]
Fig.8 Switching Characteristics
0
01
2345
Total Gate Charge : Qg[nC]
Fig.9 Dynamic Input Characteristics
6
3/4
Transistor
1000
Ta=125°C
75°C
25°C
−20°C
100
[mA]
F
100
QS5U33
10
1
125°C
75°C
10
Forward Current : I
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage :VF [V]
Fig.10 Forward Temperature Characteristics
0.1
0.01
Reverse Current : IR[A]
0.001
0.0001
010203040
Reverse Voltage : VR[V]
Fig.11 Reverse Temperature Characteristics
25°C
−20°C
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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