ROHM QS5U33 Technical data

Transistor

4V Drive Pch+SBD MOSFET

QS5U33

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
Schottky Barrier DIODE

zFeatures

1) The QS5U33 combines Pch MOSFET with
a Schottky barrier diode in TSMT5 package.

2) Low on-state resistance with fast sw itching.

3) Low voltage drive (4V).

4) Built-in schottky barrier diode has low forward voltage.

zApplications

Load switch, DC/DC conversion

zPackaging specifications zEquivalent circuit

Type

QS5U33

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

TSMT5

2.9

1.9

0.950.95

(5)

(4)

(3)(2)

(1)

0.4

Abbreviated symbol : U33

(5) (4)

∗2

∗1

(1) (2) (3)

∗1 ESD protection diode
∗2 Body diode

∗ A protection diode has been buitt in between the gate and

the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.

QS5U33

1.0MAX

0.85

0.7

2.8

1.6

0~0.1

0.6

~

0.3

0.16

Each lead has same dimensions

(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain

1/4

Transistor

zAbsolute maximum ratings (Ta=25°C)

<

MOSFET

Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Channel temperature

Power dissipation

<Di>

Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dispation

<

MOSFET AND Di

Total power dissipation
Range of strage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board.

zElectrical characteristics (T a=25°C)

<

MOSFET

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-starte
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Total gate charge

Gate-source charge
Gate-drain charge

∗ Pulsed

>

Parameter

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

P

∗1

∗1

∗3

Parameter Symbol Limits Unit

RM

R

F

∗2

FSM

∗3

P

D

Limits Unit

−30

±20
±2.0
±8.0

−0.75

−8.0

0.9

25
20

1.0

3.0

0.7

>

Parameter Symbol Limits Unit

∗3

P

D

1.25

>

Parameter Symbol

V

V

R

Min.

Typ. Max.

I

(BR) DSS

I

GS (th)

DS (on)

C

C
C

t

d (on)

t

d (off)

Q

Q

−−±10 µAV

GSS

−30 −−VID= −1mA, VGS= 0V

DSS

−−−1 µAVDS= −30V, VGS= 0V

−1.0 −−2.5 V VDS= −10V, ID= −1mA

− 95 135 mΩ I

∗

− 145 205 mΩ ID= −1A, VGS= −4.5V

− 160 225 mΩ I

∗

1.4 −−SV

Y

fs

iss

− 310 − pF VDS= −10V

oss

− 5545− pF VGS= 0V

rss

−

∗

∗

r

t

∗

f

t

∗

Q

g

∗

∗

gs

∗

gd

7

−

6

−

25

−

6

−

−

3.4

1.0

−

1.3

−−nC

VV
VV
AI
AI
AI
AI

°CTch 150

W/ELEMENT

VV
VV
AI
AI

°CTj 150

W/ELEMENT

W/TOTAL

°CTstg −55 to +150

Unit

GS

= ±20V, VDS= 0V

D

= −2A, VGS= −10V

D

= −1A, VGS= −4.0V

DS

= −10V, ID= −1A

− pF f=1MHz

V

− ns

− ns

− ns

− ns

− nC

− nC

DD

GS

V

D

= −1A

I
R

L

R

G

V

DD

V

GS

I

D

= −2A

L

R

G

R

= −10V

15Ω

10Ω

= −5V

7.5Ω
10Ω

QS5U33

Conditions

−15V

−15V

<

MOSFET> Body diode (Source-drain)

Parameter Symbol

Forward voltage

Min. Typ. Max.

SD

−− V

Unit

−1.2V

IS= −0.75V , VGS= 0V

Conditions

<Di>

Parameter Symbol

Forward voltage
Reverse current

2/4

Min. Typ. Max.

F

−− V

R

−− µA

Unit

0.45V
200I

IF= 1.0V
VR= 20V

Conditions