ROHM QS5U28 Technical data
Transistor
d.
2.5V Drive Pch+SBD MOS FET
QS5U28
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS5U28 combines Pch MOS FET with
a Schottky barrier diode in TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zApplic ations
Load switch, DC/DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U28
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
TSMT5
2.9
1.9
0.950.95
(5)
(1)
0.4
Abbreviated symbol : U28
(5) (4)
∗1
(1) (2) (3)
∗1 ESD protection diode
∗2 Body diode
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceede
1.0MAX
0.85
0.7
(4)
2.8
1.6
(3)(2)
∗2
0~0.1
0.16
Each lead has same dimensions
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
QS5U28
0.6
~
0.3
Rev.A 1/4
Transistor
zAbsolute maximum ratings (Ta=25°C)
<
MOSFET
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
>
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
Limits Unit
−20
±12
∗1
∗1
±2.0
±8.0
−1.0
−8.0
Channel temperature
∗3
Power dispation
D
P
0.9
<Di>
Parameter Symbol Limits Unit
FSM
RM
R
F
∗2
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
∗3
P
Power dispation
<
MOSFET AND Di
>
D
Parameter Symbol Limits Unit
Total power dispation
∗3
P
D
Range of strage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board.
zElectrical characteristics (Ta=25°C)
<
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
>
Parameter Symbol
I
GSS
(BR) DSS
V
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
f
t
Q
g
Q
gs
gd
Q
Min.
−−±10 µAV
−20 −−VID= −1mA, VGS= 0V
−−−1 µAVDS= −20V, VGS= 0V
−0.7 −−2.0 V VDS= −10V, ID= −1mA
− 90 125 mΩ I
∗
− 97 135 mΩ ID= −2A, VGS= −4.0V
− 175 245 mΩ I
∗
1.6 −−SV
− 450 − pF VDS= −10V
− 7052− pF VGS= 0V
−
∗
−
∗
−
∗
−
−
∗
−
∗
∗
−
∗
−−nC
25
20
1.0
3.0
0.7
1.25
Typ. Max.
10
16
32
15
4.8
1.0
1.3
VV
VV
AI
AI
AI
AI
°CTch 150
W/ELEMENT
VV
VV
AI
AI
°CTj 150
W/ELEMENT
W/TOTAL
°CTstg −55 to +150
Unit
GS
= ±12V, VDS= 0V
D
= −2A, VGS= −4.5V
D
= −1A, VGS= −2.5V
DS
= −10V, ID= −1A
− pF f=1MHz
V
− ns
− ns
− ns
− ns
− nC
− nC
DD
GS
V
D
= −1A
I
R
L
R
G
V
DD
V
GS
I
D
= −2A
R
L
G
R
= −4.5V
= 15Ω
= 10Ω
= −4.5V
= 7.5Ω
= 10Ω
−15
−15
V
V
Conditions
QS5U28
<
MOSFET> Body diode (Source-drain)
Parameter Symbol
Forward voltage
Min. Typ. Max.
SD
−− V
Unit
−1.2V
IS= −1.0V , VGS= 0V
Conditions
<Di>
Parameter Symbol
Forward voltage
Reverse current
Rev.A 2/4
Min. Typ. Max.
F
−− V
R
−− µA
Unit
0.45V
200I
IF= −1.0V
VR= 20V
Conditions
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