Transistor
d.
2.5V Drive Pch+SBD MOS FET
QS5U28
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS5U28 combines Pch MOS FET with
a Schottky barrier diode in TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zApplic ations
Load switch, DC/DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U28
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
TSMT5
2.9
1.9
0.950.95
(5)
(1)
0.4
Abbreviated symbol : U28
(5) (4)
∗1
(1) (2) (3)
∗1 ESD protection diode
∗2 Body diode
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceede
1.0MAX
0.85
0.7
(4)
2.8
1.6
(3)(2)
∗2
0~0.1
0.16
Each lead has same dimensions
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
QS5U28
0.6
~
0.3
Rev.A 1/4
Transistor
zAbsolute maximum ratings (Ta=25°C)
<
MOSFET
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
>
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
Limits Unit
−20
±12
∗1
∗1
±2.0
±8.0
−1.0
−8.0
Channel temperature
∗3
Power dispation
D
P
0.9
<Di>
Parameter Symbol Limits Unit
FSM
RM
R
F
∗2
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
∗3
P
Power dispation
<
MOSFET AND Di
>
D
Parameter Symbol Limits Unit
Total power dispation
∗3
P
D
Range of strage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board.
zElectrical characteristics (Ta=25°C)
<
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
>
Parameter Symbol
I
GSS
(BR) DSS
V
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
f
t
Q
g
Q
gs
gd
Q
Min.
−−±10 µAV
−20 −−VID= −1mA, VGS= 0V
−−−1 µAVDS= −20V, VGS= 0V
−0.7 −−2.0 V VDS= −10V, ID= −1mA
− 90 125 mΩ I
∗
− 97 135 mΩ ID= −2A, VGS= −4.0V
− 175 245 mΩ I
∗
1.6 −−SV
− 450 − pF VDS= −10V
− 7052− pF VGS= 0V
−
∗
−
∗
−
∗
−
−
∗
−
∗
∗
−
∗
−−nC
25
20
1.0
3.0
0.7
1.25
Typ. Max.
10
16
32
15
4.8
1.0
1.3
VV
VV
AI
AI
AI
AI
°CTch 150
W/ELEMENT
VV
VV
AI
AI
°CTj 150
W/ELEMENT
W/TOTAL
°CTstg −55 to +150
Unit
GS
= ±12V, VDS= 0V
D
= −2A, VGS= −4.5V
D
= −1A, VGS= −2.5V
DS
= −10V, ID= −1A
− pF f=1MHz
V
− ns
− ns
− ns
− ns
− nC
− nC
DD
GS
V
D
= −1A
I
R
L
R
G
V
DD
V
GS
I
D
= −2A
R
L
G
R
= −4.5V
= 15Ω
= 10Ω
= −4.5V
= 7.5Ω
= 10Ω
−15
−15
V
V
Conditions
QS5U28
<
MOSFET> Body diode (Source-drain)
Parameter Symbol
Forward voltage
Min. Typ. Max.
SD
−− V
Unit
−1.2V
IS= −1.0V , VGS= 0V
Conditions
<Di>
Parameter Symbol
Forward voltage
Reverse current
Rev.A 2/4
Min. Typ. Max.
F
−− V
R
−− µA
Unit
0.45V
200I
IF= −1.0V
VR= 20V
Conditions
Transistor
s
)
0
)
)
)
)
te
)
0
)
.6
.
)
0
0
s
zElectrical characteristic curves
10
(A)
1
D
−I
Ta=125°C
0.1
0.01
DRAIN CURRENT :
0.001
0 0.5 1.0 1.5 2.0 2.5 3.0
Fig.1
1000
(mΩ
DS (on)
R
100
75°C
25°C
−25°C
GATE-SOURCE VOLTAGE : −VGS (V)
Typical Transfer Characteristic
Ta=125°C
75°C
25°C
−25°C
VDS= −10V
Pulsed
VGS= −2.5V
Pulsed
1000
(mΩ)
DS (on)
R
100
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
Fig.2
500
(mΩ
400
DS (on)
R
300
200
100
VGS= −4.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.10.01 1 1
DRAIN CURRENT : −ID (A)
Static Drain-Source On-State
Resistance vs. Drain Current (Ι
ID= −1A
I
D
= −2A
Ta=25°C
Pulsed
1000
(mΩ
DS (on)
R
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
Fig.3
1000
(mΩ
DS (on)
R
100
QS5U28
VGS= −4V
Ta=125°C
75°C
25°C
−25°C
0.10.01 1 10
DRAIN CURRENT : −ID (A)
Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ
VGS=−2.5V
−4.0V
−4.5V
Pulsed
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
Fig.4
0.10.01 1 10
DRAIN CURRENT : −ID (A)
Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ
ON-STATE RESISTANCE :
0
024681012
GATE-SOURCE VOLTAGE : −V
GS
(
Fig.5 Static Drain-Source On-Sta
Resistance vs. Gate-Source
Voltage
V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.01 0.1 1 1
DRAIN CURRENT : −ID (A)
Fig.6
Static Drain-Source On-State
Resistance vs. Drain Current
STATIC DRAIN-SOURCE
10
(A
DR
Ta=125°C
1
75°C
25°C
−25°C
0.1
REVERCE DRAIN CURRENT : −I
0.01
0 0.4 0.6 1.00.2 0.8 1.2 1.4 1
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.7 Reverse Drain Current vs
Source-Drain Voltage
VGS=0V
Pulsed
1000
100
CAPACITANCE : C (pF)
10
0.01 0.1 1 10 10
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
Ta=25°C
f=1MH
VGS=0V
C
iss
C
oss
C
rss
Z
1000
t
f
100
SWITCHING TIME : t (ns)
t
d(off)
t
d(on)
10
1
0.01 0.1 1 1
t
r
DRAIN CURRENT : −ID (A)
Fig.9 Switching Characteristic
Ta=25°C
V
DD
= −15V
V
GS
= −4.5V
R
G
=10Ω
Pulsed
Rev.A 3/4
Transistor
s
F
%
8
(V)
7
GS
6
5
4
3
2
1
GATE-SOURCE VOLTAGE : −V
0
024135
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristic
Ta=25°C
V
DD
= −15V
I
D
= −2A
R
G
=10Ω
Pulsed
zMeasurement circuits
R
G
6
V
GS
I
D
D.U.T.
QS5U28
Pulse Width
GS
V
DS
R
L
V
10%
50%
90%
50%
10% 10
V
DD
V
DS
t
90% 90%
d(on)
t
r
t
on
t
d(off)
t
r
t
off
ig.11 Switching Time Measurement Circuit Fig.12 Switching Waveforms
V
G
V
I
G(Const)
GS
R
G
I
D
D.U.T.
V
DS
R
L
V
GS
Q
V
DD
Q
g
gs
Q
gd
Charge
Fig.13 Gate Charge Measurement Circuit Fig.14 Gate Charge Waveforms
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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