Transistor
d.
2.5V Drive Pch+SBD MOS FET
QS5U27
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS5U27 combines Pch MOS FET with a
Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zApplic ations
load switch, DC/DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U27
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
TSMT5
2.9
1.9
0.950.95
(5)
(1)
0.4
Abbreviated symbol : U27
(5) (4)
∗1
(1) (2) (3)
∗1 ESD protection diode
∗2 Body diode
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceede
1.0MAX
0.85
0.7
(4)
2.8
1.6
(3)(2)
∗2
0~0.1
0.16
Each lead has same dimensions
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
QS5U27
0.6
~
0.3
Rev.A 1/4
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
•
1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
<
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
>
Parameter Symbol
I
GSS
(BR) DSS
V
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
rss
C
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
−20 −−VID=−1mA, VGS=0V
−0.7 −−2.0 V VDS=−10V, ID=−1mA
∗
∗
1.0 −−SV
∗
∗
∗
∗
<
Body diode (source−drain)
Parameter Symbol
Forward voltage
>
Min. Typ. Max.
V
SD
−−−1.2 V IS=−0.75A, VGS=0V
<Di>
Parameter Symbol
Forward voltage
Reverse current
Min. Typ. Max.
V
F
I
R
Symbol
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
P
D
V
RM
V
R
I
F
∗2
I
FSM
Tj
∗3
P
D
∗3
P
D
Tstg
Limits Unit
−20
±12
±1.5
±6.0
−0.75
−3.0
0.9
150
0.7
1.25
−55 to +150
V
V
A
A
A
A
°C
W / ELEMENT
V25
V20
A1.0
A3.0
°C
W / ELEMENT
W / TOTAL
°C
Typ. Max.
−−±10 µAV
Unit
GS
−−−1 µAVDS=−20V, VGS=0V
− 160 200 mΩ I
D
− 180 240 mΩ ID=−1.5A, VGS=−4V
− 260 340 mΩ I
D
DS
− 325 − pF VDS=−10V
− 6040− pF VGS=0V
−
−
−
−
−
−
−
−−nC ID=−1.5A
− pF f=1MHz
10
− ns ID=−0.75A
10
− ns
35
− ns
10
− ns
4.2
− nC
1.0
− nC VGS=−4.5V
1.1
V
DD
V
GS
R
RG=10Ω
V
DD
Unit
Unit
−−0.45 V IF=1.0A
−−200 µAVR=20V
Conditions
=±12V, VDS=0V
=−1.5A, VGS=−4.5V
=−0.75A, VGS=−2.5V
=−10V, ID=−0.75A
−15
V
=−4.5V
L
=20Ω
−15
V
Conditions
Conditions
QS5U27
Rev.A 2/4
Transistor
s
10
0
)
)
)
)
)
te
)
)
)
2
)
s.
)
10
0
0
s
zElectrical characteristic curves
VDS=−10V
Pulsed
(A)
1
D
−I
Ta=125°C
0.1
Ta=75°C
Ta=25°C
Ta=−25°C
0.01
DRAIN CURRENT :
QS5U27
1000
(mΩ)
DS (on)
R
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
VGS=−4.5V
Pulsed
1000
(mΩ
DS (on)
R
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
VGS=−4V
Pulsed
0.001
0 0.5 1 1.5 2 2.5 3 3.5 4
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.1
Typical Transfer Characteristic
1000
RDS (on) (mΩ
Ta=125°C
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
Ta=75°C
Ta=25°C
Ta=−25°C
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.4
Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ
(A
DR
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
REVERCE DRAIN CURRENT : −I
0.01
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : −VSD (V
Fig.7 Reverse Drain Current v
Source-Drain Current
VGS=−2.5V
Pulsed
VGS=0V
Pulsed
10
0.1 1 1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
DRAIN CURRENT : −ID (A)
Fig.2
Static Drain-Source On-State
Resistance vs. Drain Current (Ι
400
(mΩ
350
DS (on)
300
R
250
200
150
100
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0
024681012
Fig.5 Static Drain-Source On-Sta
10000
1000
100
CAPACITANCE : C (pF)
10
0.01 0.1 1 10 10
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.8 Typical Capacitance vs.
ID=−0.75A
ID=−1.5A
GATE-SOURCE VOLTAGE : −V
Resistance vs. Gate-Source
Voltage
Drain-Source Voltage
Ta=25°C
Pulsed
GS
(
Ta=25°C
f=1MH
VGS=0V
C
iss
C
oss
C
rss
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.3
Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ
1000
(mΩ
DS (on)
R
100
VGS=−2.5V
VGS=−4.0V
VGS=−4.5V
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
V)
DRAIN CURRENT : −ID (A)
Fig.6
Static Drain-Source On-State
Ta=25°C
Pulsed
Resistance vs. Drain Current (
1000
Z
100
10
SWITCHING TIME : t (ns)
1
0.01 0.1 1 1
t
f
t
d(off)
t
d(on)
t
r
DRAIN CURRENT : −ID (A)
Ta=25°C
V
V
R
Pulsed
DD
GS
G
=10Ω
=−15V
=−4.5V
Fig.9 Switching Characteristic
Rev.A 3/4
Transistor
6
GATE-SOURCE VOLTAGE : V
(V)
8
F
%
Ta=25°C
7
GS
6
5
4
3
2
1
0
024135
TOTAL GATE CHARGE : Qg (nC)
V
I
D
R
Pulsed
Fig.10 Dynamic Input
Characteristics
zMeasurement circuits
DD
=−15V
=−1.5A
G
=10Ω
R
QS5U27
V
GS
G
I
D
D.U.T.
GS
V
DS
R
L
V
DD
V
V
DS
t
d(on)
Pulse Width
10%
50%
90%
50%
10% 10
90% 90%
t
t
t
on
d(off)
r
t
off
t
r
ig.11 Switching Time Measurement Circuit Fig.12 Switching Waveforms
V
G
V
I
G(Const)
GS
R
G
D
I
D.U.T.
V
DS
R
L
V
GS
Q
V
DD
Q
g
gs
Q
gd
Charge
Fig.13 Gate Charge Measurement Circuit Fig.14 Gate Charge Waveforms
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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