ROHM QS5U27 Technical data

Transistor

d.

2.5V Drive Pch+SBD MOS FET

QS5U27

zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET

Schottky Barrier DIODE

zFeatures

1) The QS5U27 combines Pch MOS FET with a
Schottky barrier diode in a TSMT5 package.

2) Low on-state resistance with fast switching.

3) Low voltage drive (2.5V).

4) Built-in schottky barrier diode has low forward voltage.

zApplic ations

load switch, DC/DC conversion

zPackaging specifications zEquivalent circuit

Type

QS5U27

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

TSMT5

2.9

1.9

0.950.95

(5)

(1)

0.4

Abbreviated symbol : U27

(5) (4)

∗1

(1) (2) (3)

∗1 ESD protection diode
∗2 Body diode

∗ A protection diode has been buitt in between the gate and

the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceede

1.0MAX

0.85

0.7

(4)

2.8

1.6

(3)(2)

∗2

0~0.1

0.16

Each lead has same dimensions

(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain

QS5U27

0.6

~

0.3

Rev.A 1/4

Transistor

zAbsolute maximum ratings (Ta=25°C)

<MOSFET>

Parameter

Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)

Continuous
Pulsed
Continuous
Pulsed

Channel temperature
Power dissipation

<Di>

Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation

<MOSFET AND Di>
Total power dissipation
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

•

1cyc. ∗3 Mounted on a ceramic board

zElectrical characteristics (Ta=25°C)

<

MOSFET

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-starte
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗ Pulsed

>

Parameter Symbol

I

GSS

(BR) DSS

V

I

DSS

V

GS (th)

R

DS (on)

Y

fs

C

iss

C

oss
rss

C

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

Min.

−20 −−VID=−1mA, VGS=0V

−0.7 −−2.0 V VDS=−10V, ID=−1mA

∗

∗

1.0 −−SV

∗

∗

∗

∗

<

Body diode (source−drain)

Parameter Symbol

Forward voltage

>

Min. Typ. Max.

V

SD

−−−1.2 V IS=−0.75A, VGS=0V

<Di>

Parameter Symbol

Forward voltage

Reverse current

Min. Typ. Max.

V

F

I

R

Symbol

V

DSS

V

GSS

I

D

∗1

I

DP

I

S

∗1

I

SP

Tch 150

∗3

P

D

V

RM

V

R

I

F

∗2

I

FSM

Tj

∗3

P

D

∗3

P

D

Tstg

Limits Unit

−20

±12
±1.5
±6.0

−0.75

−3.0

0.9

150

0.7

1.25

−55 to +150

V
V
A
A
A
A

°C

W / ELEMENT

V25
V20
A1.0
A3.0

°C

W / ELEMENT

W / TOTAL

°C

Typ. Max.

−−±10 µAV

Unit

GS

−−−1 µAVDS=−20V, VGS=0V

− 160 200 mΩ I

D

− 180 240 mΩ ID=−1.5A, VGS=−4V

− 260 340 mΩ I

D

DS

− 325 − pF VDS=−10V

− 6040− pF VGS=0V

−

−

−

−

−

−

−

−−nC ID=−1.5A

− pF f=1MHz

10

− ns ID=−0.75A

10

− ns

35

− ns

10

− ns

4.2

− nC

1.0

− nC VGS=−4.5V

1.1

V

DD

V

GS

R
RG=10Ω

V

DD

Unit

Unit

−−0.45 V IF=1.0A

−−200 µAVR=20V

Conditions

=±12V, VDS=0V

=−1.5A, VGS=−4.5V

=−0.75A, VGS=−2.5V

=−10V, ID=−0.75A

−15

V

=−4.5V

L

=20Ω

−15

V

Conditions

Conditions

QS5U27

Rev.A 2/4