ROHM QS5U26 Technical data

Transistor

2.5V Drive Pch+SBD MOSFET

QS5U26

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
Schottky Barrier DIODE

zFeatures

1) The QS5U26 combines Pch MOSFET with
a Schottky barrier diode in a TSMT5 package.

2) Low on-state resistance with fast sw itching.

3) Low voltage drive (2.5V).

4) Built-in schottky barrier diode has low forward voltage.

zApplications

Switchi ng

zPackaging specifications zEquivalent circuit

Type

QS5U26

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

TSMT5

2.9

1.9

0.950.95

(5)

(4)

1.6

(3)(2)

(1)

0.4

Abbreviated symbol : U26

(5) (4)

Each lead has same dimensions

∗2

1.0MAX

2.8

0.16

0.85

QS5U26

0.7

0~0.1

0.6

~

0.3

(1) (2) (3)

∗1 ESD protection diode
∗2 Body diode

∗1

(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain

Rev.B 1/4

Transistor

zAbsolute maximum ratings (Ta=25°C)

<

MOSFET

Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Channel temperature

Power Dissipation

<Di>

Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power Dissipation

<

MOSFET AND Di

Total power dissipatino
Range of strage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board.

zElectrical characteristics (T a=25°C)

<

MOSFET

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Static drain-source on-starte
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗ Pulsed

<

Body diode (source−drain)

Forward voltage

<Di>

Forward voltage
Reverse current

>

Parameter

Continuous
Pulsed
Continuous
Pulsed

Parameter Symbol Limits Unit

Symbol

DSS
GSS

D

DP

S

SP

D

RM

R

F

FSM

D

∗1

∗1

∗3

∗2

∗3

Limits Unit

−20

±12
±1.5
±6.0

−0.75

−3.0

>

Parameter Symbol Limits Unit

∗3

D

P

1.25

>

Parameter Symbol

V

V

R

I

GSS

(BR) DSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

oss

C

rss

C

d (on)

t

r

t

d (off)

t

f

t

g

Q

gs

Q

Q

gd

Min.

Typ. Max.

−−±10 µAV

−20 −−VID=−1mA, VGS=0V

−−−1 µAVDS=−20V, VGS=0V

−0.7 −−2.0 V VDS=−10V, ID=−1mAGate threshold voltage

− 160 200 mΩ I

∗

− 180 240 mΩ ID=−1.5A, VGS=−4V

− 260 340 mΩ I

∗

1.0 −−SV

− 325 − pF VDS=−10V

− 6040− pF VGS=0V

−

∗
∗
∗
∗

10

−

10

−

35

−

10

−

4.2

−

1.0

−

1.1

−−nC ID=−1.5A

>

Parameter Symbol

Parameter Symbol

Min. Typ. Max.

SD

V

Min. Typ. Max.

F

V

I

R

−−−1.2 V IS=−0.75A, VGS=0V

−−0.36 V IF=0.1A

−−0.47 V I

−−100 µAVR=20V

VV
VV
AI
AI
AI
AI

°CTch 150

0.9

30
20

0.5

2.0

0.7

W / ELEMENTP

VV
VV
AI
AI

°CTj 150

W / ELEMENTP

W / TOTAL

°CTstg −55 to 150

Unit

GS

D

=−1.5A, VGS=−4.5V

D

=−0.75A, VGS=−2.5V

DS

− pF f=1MHz

− ns ID=−0.75A

V

− ns

− ns

− ns

− nC

V
R
R

V

DD

GS
L

=20Ω

G

=10Ω

DD

− nC VGS=−4.5V

Unit

Unit

F

=0.5A

Conditions

=±12V, VDS=0V

=−10V, ID=−0.75A

−15

V

=−4.5V

−15

V

Conditions

Conditions

QS5U26

Rev.B 2/4

Transistor

zElectrical characteristic curves

10

(A)

1

D

−I

Ta=125°C

0.1

Ta=75°C
Ta=25°C

Ta=−25°C

0.01

DRAIN CURRENT :

0.001
0 0.5 1 1.5 2 2.5 3 3.5 4

GATE-SOURCE VOLTAGE : −VGS (V)

Fig.1

Typical Transfer Characteristics

1000

(mΩ)

DS (on)

R

Ta=125°C

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

Ta=75°C
Ta=25°C

Ta=−25°C

10

0.1 1 10

DRAIN CURRENT : −ID (A)

Fig.4

Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ)

10

(A)

DR

Ta=125°C

1

Ta=75°C
Ta=25°C

Ta=−25°C

0.1

REVERCE DRAIN CURRENT : −I

0.01
0 0.5 1 1.5 2

SOURCE-DRAIN VOLTAGE : −VSD (V)

Fig.7 Reverse Drain Current vs.

Source-Drain Current

VDS=−10V
Pulsed

VGS=−2.5V
Pulsed

VGS=0V
Pulsed

1000

(mΩ)

DS (on)

R

100

Ta=125°C

Ta=75°C
Ta=25°C

Ta=−25°C

10

0.1 1 10

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

DRAIN CURRENT : −ID (A)

Fig.2

Static Drain-Source On-State
Resistance vs. Drain Current (Ι)

400

(mΩ)

350

DS (on)

300

R

250
200
150
100

50

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0

024681012

Fig.5 Static Drain-Source On-State

10000

1000

100

CAPACITANCE : C (pF)

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : −VDS (V)

Fig.8 Typical Capacitance vs.

ID=−0.75A

D

=−1.5A

I

GATE-SOURCE VOLTAGE : −V

Resistance vs. Gate-Source
Voltage

Drain-Source Voltage

VGS=−4.5V
Pulsed

Ta=25°C
Pulsed

GS

(

V)

Ta=25°C
f=1MH

Z

VGS=0V

C

iss

C

oss

C

rss

1000

(mΩ)

DS (on)

R

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

10

0.1 1 10

Fig.3

1000

(mΩ)

DS (on)

R

100

VGS=−2.5V
V
V

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

10

0.1 1 10

Fig.6

1000

100

10

SWITCHING TIME : t (ns)

1

0.01 0.1 1 10

Fig.9 Switching Characteristics

QS5U26

VGS=−4V
Pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=−25°C

DRAIN CURRENT : −ID (A)

Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ)

Ta=25°C
Pulsed

GS=−4.0V
GS=−4.5V

DRAIN CURRENT : −ID (A)

Static Drain-Source On-State
Resistance vs. Drain Current ( )

Ta=25°C
V

DD

=−15V

V

GS

=−4.5V

R

G

=10Ω

Pulsed

t

f

t

d(off)

t

d(on)

t

r

DRAIN CURRENT : −ID (A)

Rev.B 3/4

QS5U26

Transistor

1000

125°C

(mA)

75°C

100

F

25°C

−25°C

10

1

FORWARD CURRENT : I

0.1
0 0.1 0.2 0.3 0.4 0.5

FORWARD VOLTAGE : V

(V)

F

Fig.10 Forward Current

vs. Forward Voltage

zNotice

SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,

and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding

temperature, generating heat of MOSFET and the reverse current.

100

10

(mA)

R

1

0.1

0.01

0.001

REVERSE CURRENT : I

0.0001
0 10203040

REVERSE VOLTAGE : V

125°C

75°C

25°C

−25°C

R

(V)

Fig.11 Reverse Current

vs. Reverse Voltage

Rev.B 4/4

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Appendix1-Rev3.0