ROHM QS5U23 Schematic [ru]
Transistor
2.5V Drive Pch+SBD MOS FET
QS5U23
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS5U23 combines Pch MOS FET with a
Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive(2.5V)
4) Built-in schottky barrier diode has low forward voltage.
zApplic ations
Load switch , DC/DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U23
Package
Code
Basic ordering unit
(pieces)
Taping
TR
3000
TSMT5
(5)
2.9
1.9
0.950.95
(5)
(1)
0.4
Abbreviated symbol : U23
∗2
∗1
1.0MAX
0.85
0.7
(4)
2.8
1.6
(3)(2)
0~0.1
0.16
Each lead has same dimensions
(4)
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
(5)CATHODE
QS5U23
0.6
~
0.3
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(2)
(3)
Rev.A 1/4
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
•
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
<
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain−source
on−state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn−on delay time
Rise Time
Turn off delay time
Fall time
Total gate charge
Gate−source charge
Gate−drain charge
∗Pulsed
<
Body diode (source−drain)
Forward voltage
>
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
∗
R
DS(on)
∗
Y
fs
C
iss
C
oss
C
rss
∗
t
d(on)
∗
t
r
∗
t
d(off)
∗
f
t
Qg
Qgs
Qgd
>
SD
V
Limits Unit
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
−20
±12
±1.5
±6.0
−0.75
−3.0
Tch 150
∗3
P
V
I
Tstg
Min.
−
−20
−
−0.7
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
V
I
FSM
Tj
P
P
D
RM
R
F
∗2
∗3
D
∗3
D
0.9
W / ELEMENT
150
0.7
1.25
W / ELEMENT
W / TOTAL
−55 to +150
Typ. Max. Unit Conditions
±10
−
−1
−2.0
200
−
−
−
−
−
−
−
−
−
−
−
µAV
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
−
−
−
−
160
180 240
260 340
−
325
60
40
10
10
35
10
4.2
1.0
1.1
− −1.2
V
V
A
A
A
A
°C
V30
V20
A0.5
A2.0
°C
°C
GS
I
D
=
−1mA/ V
V
DS
DS
V
I
D
=
−1.5A, V
I
D
=
−1.5A, V
I
D
=
−0.75A, V
V
DS
V
DS
V
GS
f
=
1MHz
I
D
=
−0.75A
DD
V
V
GS
R
L
=
R
G
=
DD
V
V
GS
I
D
=
−1.5A
S
=
−0.75A/ V
I
=
±12V/ V
=−
20V/ V
=
−10V/ I
=
−10V, I
=
−10V
=
0V
−15
=−4.5
20Ω
10Ω
−1
=−4.5
5V
QS5U23
DS
=
0V
GS
=
0V
GS
=
0V
D
=
−1mA
GS
=−
4.5V
GS
=−
4V
GS
=−
2.5V
D
=
−0.75A
V
V
GS
=
0V
<
>
Di
F
=
0.1A
µA
I
V
F
=
0.5A
I
V
R
=
20V
V
Foward voltage drop
Reverse current
V
−
I
R
−
−
F
0.36
−
0.47
−
100
−
Rev.A 2/4
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