Transistor
2.5V Drive Pch+SBD MOS FET
QS5U23
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS5U23 combines Pch MOS FET with a
Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive(2.5V)
4) Built-in schottky barrier diode has low forward voltage.
zApplic ations
Load switch , DC/DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U23
Package
Code
Basic ordering unit
(pieces)
Taping
TR
3000
TSMT5
(5)
2.9
1.9
0.950.95
(5)
(1)
0.4
Abbreviated symbol : U23
∗2
∗1
1.0MAX
0.85
0.7
(4)
2.8
1.6
(3)(2)
0~0.1
0.16
Each lead has same dimensions
(4)
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
(5)CATHODE
QS5U23
0.6
~
0.3
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(2)
(3)
Rev.A 1/4
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
•
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
<
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain−source
on−state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn−on delay time
Rise Time
Turn off delay time
Fall time
Total gate charge
Gate−source charge
Gate−drain charge
∗Pulsed
<
Body diode (source−drain)
Forward voltage
>
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
∗
R
DS(on)
∗
Y
fs
C
iss
C
oss
C
rss
∗
t
d(on)
∗
t
r
∗
t
d(off)
∗
f
t
Qg
Qgs
Qgd
>
SD
V
Limits Unit
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
−20
±12
±1.5
±6.0
−0.75
−3.0
Tch 150
∗3
P
V
I
Tstg
Min.
−
−20
−
−0.7
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
V
I
FSM
Tj
P
P
D
RM
R
F
∗2
∗3
D
∗3
D
0.9
W / ELEMENT
150
0.7
1.25
W / ELEMENT
W / TOTAL
−55 to +150
Typ. Max. Unit Conditions
±10
−
−1
−2.0
200
−
−
−
−
−
−
−
−
−
−
−
µAV
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
−
−
−
−
160
180 240
260 340
−
325
60
40
10
10
35
10
4.2
1.0
1.1
− −1.2
V
V
A
A
A
A
°C
V30
V20
A0.5
A2.0
°C
°C
GS
I
D
=
−1mA/ V
V
DS
DS
V
I
D
=
−1.5A, V
I
D
=
−1.5A, V
I
D
=
−0.75A, V
V
DS
V
DS
V
GS
f
=
1MHz
I
D
=
−0.75A
DD
V
V
GS
R
L
=
R
G
=
DD
V
V
GS
I
D
=
−1.5A
S
=
−0.75A/ V
I
=
±12V/ V
=−
20V/ V
=
−10V/ I
=
−10V, I
=
−10V
=
0V
−15
=−4.5
20Ω
10Ω
−1
=−4.5
5V
QS5U23
DS
=
0V
GS
=
0V
GS
=
0V
D
=
−1mA
GS
=−
4.5V
GS
=−
4V
GS
=−
2.5V
D
=
−0.75A
V
V
GS
=
0V
<
>
Di
F
=
0.1A
µA
I
V
F
=
0.5A
I
V
R
=
20V
V
Foward voltage drop
Reverse current
V
−
I
R
−
−
F
0.36
−
0.47
−
100
−
Rev.A 2/4
Transistor
s
0
0
0
2
0
.0
0
0
zElectrical characteristic curves
(A)
D
Drain Current : −I
0.01
10
1
Ta=125°C
75°C
25°C
0.1
−25°C
VDS=−10V
pulsed
1000
Ω]
m
)[
100
(on
DS
R
Ta=125°C
75°C
25°C
−25 °C
VGS=−4.5V
pulsed
1000
100
(on)[mΩ]
DS
R
Ta=125°C
75°C
25°C
−25°C
QS5U23
VGS=−4V
pulsed
0.001
0 0.5 1.0
1.5
2.0 2.5 3.0 3.5 4.0
Gate−Source Voltage : VGS[V]
Fig.1 Typical Transfer Characteristic
Static Drain−Source On−State Resistance
10
0.1 1
Fig.2 Static Drain−Source On−State
Resistance
Drain Current : −ID[A]
vs. Drain Current
Static Drain−Source On−State Resistance
1
10
0.1 1
Drain Current : −ID[A]
Fig.3 Static Drain−Source On−State
Resistance
vs. Drain Current
1
1000
Ta=125°C
75°C
100
(on)[mΩ]
DS
R
Static Drain−Source On−State Resistance
25°C
−25°C
10
0.1
1
Drain Current : −ID[A]
Fig.4 Static Drain−Source On−State
Resistance vs. Drain−Current
VGS=−2.5V
pulsed
Static Drain−Source On−State Resistance
1
400
350
I
D=−
300
250
200
(on)[mΩ]
DS
150
R
100
50
0
0.75A
−1.5A
Gate−Source Voltage : −VGS[V]
8426
Fig.5 Static Drain−Source On−State
Resistance vs.Gate−Source Voltage
Ta=25 C
pulsed
1001
1000
VGS=−2.5V
100
(on)[mΩ]
DS
R
Static Drain-Source On−State Resistance
10
−4.0V
−4.5V
0.1 1
Fig.6 Static Drain−Source On−State
Drain Current : −ID[A]
Resistance vs. Drain Current
Ta=25 C
pulsed
1
10
[A]
DR
1
Ta=125°C
75°C
25°C
−25°C
0.1
Reverse Drain Current : −I
0.01
0 0.5
Source−Drain Voltage : −V
Fig.7 Reverse Drain Current
1.0
VS. Source-Drain Current
VGS=0V
pulsed
1.5
SD
[V]
10000
1000
100
Capacitance : C [pF]
10
2
0.01 0.1 1 10 10
Drain−Source Voltage : −VDS[V]
Fig.8 Typical Capactitance
vs. Drain−Source Voltage
Ta=25 C
f=1MHz
GS
=0V
V
C
C
oss
C
rss
iss
1000
100
10
Switching Time : t [ns]
1
0.01 0.1 1 1
t
f
t
d(off)
t
d(on)
t
r
Drain Current : −ID[A]
Ta=25 C
DD=−15V
V
V
GS=−4.5V
R
G=10Ω
pulsed
Fig.9 Switching Characteristics
Rev.A 3/4
Transistor
s
6
s
F
s
F
it
V
e
8
7
[V]
6
GS
5
4
3
2
Gate-Source Voltage: -V
1
0
01
2345
Total Gate Charge : Qg[nC]
Fig.10 Dynamic Input Characteristic
zMeasurement circuits
Ta=25 C
V
DD
=−15V
I
D
=−1.5A
G
=10Ω
R
pulsed
1000
Ta=125 C
75 C
25 C
−25 C
100
[mA]
F
10
Forward Current : I
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage :VF [V]
Fig.11 Forward Temperature Characteristic
V
GS
10%
50%
QS5U23
100
10
[A]
R
1
0.1
0.01
Reverse Current : I
0.001
0.0001
010203040
Reverse Voltage : VR[V]
ig.12 Reverse Temperature Characteristic
Pulse Width
125°C
75°C
25°C
−25°C
50%
90%
V
GS
R
G
D.U.T.
D
I
V
R
L
V
DD
ig.13 Switching Time Measurement Circu
IG(Const)
I
V
GS
R
G
D
D.U.T.
V
DS
R
L
V
DD
10%
DS
VDS
90%
td(on)
ton
Fig.14 Switching Waveforms
V
G
10%
90%
t
f
td(off)tr
toff
Qg
GS
Qgs Qgd
Charg
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveforms
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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