ROHM QS5U21 Technical data
Transistor
2.5V Drive Pch+SBD MOS FET
QS5U21
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS5U21 combines Pch MOS FET with a
Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive(2.5V)
4) Built-in schottky barrier diode has low forward voltage.
zApplic ations
Load switch, DC/DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U21
Package
Code
Basic ordering unit
(pieces)
Taping
TR
3000
TSMT5
2.9
1.9
0.950.95
(5)
(4)
(3)(2)
(1)
0.4
Abbreviated symbol : U21
(5)
∗2
1.0MAX
0.85
0.7
2.8
1.6
0~0.1
0.16
Each lead has same dimensions
(4)
1
∗
0.6
~
0.3
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
(5)CATHODE
QS5U21
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Rev.A 1/4
Transistor
<
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
P
D
Limits Unit
−20
±12
±1.5
±6.0
−0.75
−3.0
0.9
W / ELEMENT
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
V
I
V
I
FSM
Tj
P
RM
R
F
∗2
150
∗3
D
0.7
W / ELEMENT
<MOSFET AND Di>
∗3
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
P
D
Tstg
•
1cyc. ∗3 Mounted on a ceramic board
1.25
−55 to +150
W / TOTAL
zElectrical characteristics (Ta=25°C)
<
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain−source
on−state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn−
Rise Time
Turn−
Fall time
Total gate charge
Gate−source charge
Gate−drain charge
∗Pulsed
Body diode (source−drain)
Forward voltage V
>
Parameter
on delay time
off delay time
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
d(on)
t
r
t
t
d(off)
t
f
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
Typ. Max. Unit Conditions
Min.
−
−20
−
−0.7
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
160
180 240
260 340
−
325
60
40
10
10
35
10
4.2
1.0
1.1
±10
−
−1
−2.0
200
−
−
−
−
−
−
−
−
−
−
−
µAV
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I
V
V
I
I
I
V
V
V
f
I
V
V
R
R
V
V
I
>
SD
−
− −1.2
V
I
V
V
A
A
A
A
°C
V25
V20
A1.0
A3.0
°C
°C
GS
=
±12V/ V
D
=
−1mA/ V
DS
=−
DS
=
−10V/ I
D
=
−1.5A, V
D
=
−1.5A, V
D
=
−0.75A, V
DS
=
−10V, I
DS
=
−10V
GS
=
0V
=
1MHz
D
=
−0.75A
DD
GS
=−4.5
L
=
20Ω
G
=
10Ω
DD
GS
=−4.5
D
=
−1.5A
S
=
−0.75A/ V
20V/ V
−15
V
−1
5V
V
DS
GS
GS
D
=
GS
GS
GS
D
=
GS
=
0V
=
0V
=
0V
−1mA
=−
4.5V
=−
4V
=−
2.5V
−0.75A
=
0V
QS5U21
<
>
Di
Foward voltage drop
Reverse current
Rev.A 2/4
V
F
−
I
R
−
0.45
−
200
−
µA
V
I
F
=
1.0A
R
=
20V
V
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