ROHM QS5U17 Technical data
QS5U17
Transistors
2.5V Drive Nch+SBD MOS FET
QS5U17
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U17 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
zApplic ations
Load switch, DC / DC conversion
zPackaging specifications
Type
QS5U17
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
Rev.B 1/4
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.950.95
(5)
(1)
0.4
Abbreviated symbol : U17
1.0MAX
0.85
0.7
(4)
2.8
1.6
(3)(2)
0~0.1
0.16
Each lead has same dimensions
zEquivalent circuit
(5) (4)
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Anode
(4) Cathode
(5) Drain
0.6
~
0.3
QS5U17
Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
zElectrical characteristics (Ta=25°C)
<MOSFET>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<Body diode (source-drain)>
Forward voltage
∗ Pulsed
<Di>
Forward voltage
Reverse current
Rev.B 2/4
Parameter
Parameter
Symbol
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
PD 0.9
V
RM
V
R
I
F
∗2
I
FSM
Tj
∗3
P
D 0.7
∗3
P
D
Tstg
•
1cyc. ∗3 Mounted on a ceramic board
Symbol
V
(BR) DSS
V
I
GSS
I
DSS
GS (th)
Min.
Typ. Max.
−−10
30 −−VID=1mA, / VGS=0V
−−1
0.5 − 1.5
− 71 100 I
∗
R
DS (on)
− 76 107 mΩ
− 110 154 I
∗
1.5 −−SV
Y
fs
C
C
C
t
d (on)
t
d (off)
Q
Q
V
Q
V
− 175 −
iss
− 50
oss
25
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
∗
SD
F
R
I
8
−
10
−
21
−
8
−
2.8
−
0.6
−
0.8
−−
−−
−−
−−
Limits Unit
30
12
±2.0
±8.0
0.8
3.2
150
1.25
−55 to +150
Unit
µA
µA
V
mΩ
mΩ
pF
pF
−
pF
−
ns
−
ns
−
ns
−
ns
−
nC
3.9
nC
−
nC
1.2 V
0.45 V
200
µA
V
V
A
A
A
A
°C
W/ELEMENT
V25
V20
A1.0
A3.0
°C
W/ELEMENT
W / TOTAL
°C
Conditions
V
=12V / VDS=0V
GS
VDS=30V / VGS=0V
VDS=10V / ID=1mA
=2.0A, VGS=4.5V
D
=2.0A, VGS=4V
I
D
=2.0A, VGS=2.5V
D
=10V, ID=2.0A
DS
VDS=10V
VGS=0V
f=1MHz
ID=1.0A
V
DD
15V
GS
=4.5V
V
R
L
=15Ω
R
G
=10Ω
V
15V
DD
VGS=4.5V
ID=2.0A
I
=3.2A / VGS=0V
S
I
=1.0A
F
V
=20V
R
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