Transistors
2.5V Drive Nch+SBD MOS FET
QS5U13
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U13 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
zApplic ations
Load switch, DC / DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U13
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.950.95
(5)
(4)
(3)(2)
(1)
0.4
Abbreviated symbol : U13
(5) (4)
∗2
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
QS5U13
1.0MAX
0.85
0.7
2.8
1.6
0~0.1
0.6
~
0.3
0.16
Each lead has same dimensions
∗1
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) Cathode
Rev.A 1/4
QS5U13
Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
zElectrical characteristics (Ta=25°C)
<MOSFET>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<Body diode (source-drain)>
Forward voltage
∗ Pulsed
<Di>
Forward voltage
Reverse current
Rev.A 2/4
Parameter
Continuous
Pulsed
Continuous
Pulsed
•
1cyc. ∗3 Mounted on a ceramic board
Parameter Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
r
t
t
d (off)
t
f
Q
g
Q
gs
Q
gd
V
V
I
Symbol
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
D
P
V
RM
V
R
I
F
∗2
I
FSM
Tj
∗3
P
D
∗3
P
D
Tstg
Min.
−55 to +150
Typ. Max. Unit Conditions
−−10 µA
30
−−
−−
0.5
− 71 100 I
∗
− 76 107 mΩ
−
1.5 V
− 110 154 I
1.5
−
−
175
−
50
−
∗
∗
∗
∗
∗
∗
∗
∗
SD
F
R
25
−
8
10
−
21
−
8
−
2.8
−
−
−−
3.9
0.6
0.8
−−
−−
−−
−−
Limits Unit
30
12
±2.0
±8.0
0.8
3.2
0.9
W/ELEMENT
150
0.7
1.25
1
−
−
−
−
−
−
−
−
−
W/ELEMENT
W / TOTAL
V
GS
V
=1mA, / VGS=0V
I
D
µA
V
DS
V
DS
=2.0A, VGS=4.5V
mΩ
D
=2.0A, VGS=4V
I
D
=2.0A, VGS=2.5V
mΩ
D
SV
DS
pF V
DS
pF V
GS
pF f=1MHz
ns
ID=1.0A
V
DD
ns
GS
V
ns
R
L
=15Ω
ns
G
R
V
nC
DD
nC V
GS
nC I
=2.0A
D
1.2 V
0.36 V
0.47 V
100
µA
V
V
A
A
A
A
°C
V30
V20
A0.5
A2.0
°C
°C
=12V / VDS=0V
=30V / VGS=0V
=10V / ID=1mA
=10V, ID=2.0A
=10V
=0V
15
V
=4.5V
=10Ω
15V
=4.5V
=3.2A / VGS=0V
I
S
I
=0.1A
F
I
=0.5A
F
V
=20V
R
Transistors
zElectrical characteristic curves
<MOSFET>
10
1
(A)
D
DRAIN CURRENT : I
0.001
1000
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.0 0.5 1.0 1.5 2.0 2.5
GATE-SOURCE VOLTAGE : V
Fig.1
Typical Transfer Characteristics
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VDS=10V
Pulsed
GS
VGS=2.5V
Pulsed
QS5U13
1000
(mΩ)
Ta=125°C
DS (on)
Ta=75°C
R
Ta=25°C
Ta= −25°C
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
(V)
DRAIN CURRENT : I
VGS=4.5V
Pulsed
(A)
D
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
300
(mΩ)
DS (on)
R
200
100
ID=2A
ID=1A
Ta=25°C
Pulsed
1000
(mΩ)
Ta=125°C
DS (on)
Ta=75°C
R
Ta=25°C
Ta= −25°C
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
DRAIN CURRENT : I
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
(mΩ)
DS (on)
R
100
VGS=2.5V
VGS=4V
VGS=4.5V
VGS=4.0V
Pulsed
(A)
D
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
DRAIN CURRENT : I
(A)
D
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
012345678910
GATE-SOURCE VOLTAGE : V
Fig.5 Static Drain-Source
On-State Resistance vs.
(V)
GS
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0.1 1 10
DRAIN CURRENT : I
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
(A)
D
Gate-Source Voltage
10
Ta=125°C
Ta=75°C
(A)
Ta=25°C
S
Ta= −25°C
1
0.1
SOURCE CURRENT : I
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
Fig.7 Reverse Drain Current
vs. Source-Drain Current
VGS=0V
Pulsed
SD
(V)
1000
(pF)
100
CAPACITANCE : C
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
Ta=25°C
f=1MHz
=0V
V
GS
C
C
DS
1000
(ns)
C
iss
oss
rss
(V)
100
10
SWITCHING TIME : t
1
0.01 0.1 1 10
t
f
t
d (off)
t
d (on)
t
r
DRAIN CURRENT : I
D
Ta=25°C
=15V
V
DD
=4.5V
V
GS
=10Ω
R
G
Pulsed
(A)
Fig.9 Switching Characteristics
Rev.A 3/4
Transistors
6
Ta=25°C
=15V
V
DD
(V)
5
=2A
I
D
GS
=10Ω
R
G
Pulsed
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
0123
TOTAL GATE CHARGE : Qg (nC)
Fig.10
Dynamic Input Characteristics
zMeasurement circuits
1000
125°C
(mA)
75°C
100
F
25°C
−25°C
10
1
FORWARD CURRENT : I
0.1
0 0.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE : V
Fig.11 Forward Current
vs. Forward Voltage
QS5U13
100
10
(mA)
R
1
0.1
0.01
0.001
REVERSE CURRENT : I
0.0001
0 1020304
(V)
F
REVERSE VOLTAGE : V
Fig.12 Reverse Current
vs. Reverse Voltage
Pulse Width
125°C
75°C
25°C
−25°C
R
0
(V)
VGS
RG
I
D.U.T.
D
Fig.13 Switching Time Measurement Circuit
V
GS
I
G(Const.)
R
G
Fig.15 Gate Charge Measurement Circuit
I
D.U.T.
D
RL
R
VDS
VDD
V
DS
L
V
DD
V
V
50%
GS
10%
DS
10%
90%
t
r
t
d(on)
t
on
Fig.14 Switching Waveforms
V
G
Q
V
GS
QgsQ
gd
Fig.16 Gate Charge Waveform
90%
50%
10%
90%
f
t
d(off)
t
t
off
g
Charge
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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