ROHM QS5U13 Schematic [ru]
Transistors
2.5V Drive Nch+SBD MOS FET
QS5U13
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U13 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
zApplic ations
Load switch, DC / DC conversion
zPackaging specifications zEquivalent circuit
Type
QS5U13
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.950.95
(5)
(4)
(3)(2)
(1)
0.4
Abbreviated symbol : U13
(5) (4)
∗2
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
QS5U13
1.0MAX
0.85
0.7
2.8
1.6
0~0.1
0.6
~
0.3
0.16
Each lead has same dimensions
∗1
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) Cathode
Rev.A 1/4
QS5U13
Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
zElectrical characteristics (Ta=25°C)
<MOSFET>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<Body diode (source-drain)>
Forward voltage
∗ Pulsed
<Di>
Forward voltage
Reverse current
Rev.A 2/4
Parameter
Continuous
Pulsed
Continuous
Pulsed
•
1cyc. ∗3 Mounted on a ceramic board
Parameter Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
r
t
t
d (off)
t
f
Q
g
Q
gs
Q
gd
V
V
I
Symbol
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
D
P
V
RM
V
R
I
F
∗2
I
FSM
Tj
∗3
P
D
∗3
P
D
Tstg
Min.
−55 to +150
Typ. Max. Unit Conditions
−−10 µA
30
−−
−−
0.5
− 71 100 I
∗
− 76 107 mΩ
−
1.5 V
− 110 154 I
1.5
−
−
175
−
50
−
∗
∗
∗
∗
∗
∗
∗
∗
SD
F
R
25
−
8
10
−
21
−
8
−
2.8
−
−
−−
3.9
0.6
0.8
−−
−−
−−
−−
Limits Unit
30
12
±2.0
±8.0
0.8
3.2
0.9
W/ELEMENT
150
0.7
1.25
1
−
−
−
−
−
−
−
−
−
W/ELEMENT
W / TOTAL
V
GS
V
=1mA, / VGS=0V
I
D
µA
V
DS
V
DS
=2.0A, VGS=4.5V
mΩ
D
=2.0A, VGS=4V
I
D
=2.0A, VGS=2.5V
mΩ
D
SV
DS
pF V
DS
pF V
GS
pF f=1MHz
ns
ID=1.0A
V
DD
ns
GS
V
ns
R
L
=15Ω
ns
G
R
V
nC
DD
nC V
GS
nC I
=2.0A
D
1.2 V
0.36 V
0.47 V
100
µA
V
V
A
A
A
A
°C
V30
V20
A0.5
A2.0
°C
°C
=12V / VDS=0V
=30V / VGS=0V
=10V / ID=1mA
=10V, ID=2.0A
=10V
=0V
15
V
=4.5V
=10Ω
15V
=4.5V
=3.2A / VGS=0V
I
S
I
=0.1A
F
I
=0.5A
F
V
=20V
R
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