ROHM QS5U12 Schematic [ru]
QS5U12
Transistors
2.5V Drive Nch+SBD MOS FET
QS5U12
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U12 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
zApplic ations
Load switch, DC / DC conversion
zPackaging specifications
Type
QS5U12
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
Rev.B 1/4
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.950.95
(5)
(1)
0.4
Abbreviated symbol : U12
1.0MAX
0.85
0.7
(4)
2.8
1.6
(3)(2)
0~0.1
0.16
Each lead has same dimensions
zEquivalent circuit
(5) (4)
∗2
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) Cathode
0.6
~
0.3
QS5U12
Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
zElectrical characteristics (Ta=25°C)
<MOSFET>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<Body diode (source-drain)>
∗ Pulsed
<Di>
Forward voltage
Reverse current
Rev.B 2/4
Parameter
Continuous
Pulsed
Continuous
Pulsed
•
1cyc. ∗3 Mounted on a ceramic board
Parameter Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
V
SD
V
F
I
R
Symbol
V
DSS
V
GSS
I
D
∗1
I
DP
I
S
∗1
I
SP
Tch 150
∗3
PD 0.9
V
RM
V
R
I
F
∗2
I
FSM
Tj
∗3
P
D 0.7
∗3
P
D
Tstg
Min.
Typ. Max.
−−10 µAV
Limits Unit
30
12
±2.0
±8.0
0.8
3.2
150
1.25
−55 to +150
Unit
GS
°C
W/ELEMENT
°C
W/ELEMENT
W / TOTAL
°C
=12V / VDS=0V
30 −−VID=1mA, / VGS=0V
−−1 µAVDS=30V / VGS=0V
0.5 − 1.5 V VDS=10V / ID=1mA
− 71 100 I
∗
− 76 107 mΩ
− 110 154 I
∗
1.5 −−SV
mΩ
mΩ
=2.0A, VGS=4.5V
D
=2.0A, VGS=4V
I
D
=2.0A, VGS=2.5V
D
=10V, ID=2.0A
DS
− 175 − pF VDS=10V
− 5025− pF VGS=0V
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−−nC ID=2.0A
∗
−−1.2 V IS=3.2A / VGS=0VForward voltage
− pF f=1MHz
8
− ns
10
− ns
21
− ns
8
− ns
2.8
3.9 nC
0.6
− nC VGS=4.5V
0.8
ID=1.0A
V
DD
GS
=4.5V
V
R
L
=15Ω
R
G
=10Ω
V
15V
DD
15V
−−0.45 V IF=1.0A
−−200 µAVR=20V
V
V
A
A
A
A
V25
V20
A1.0
A3.0
Conditions
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