ROHM QS5K2 Technical data

QS5K2

Transistors

2.5V Drive Nch+Nch MOSFET

QS5K2

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

3) Space saving, small surface mount package (TSMT5).

zApplications

Switching

zPackaging specifications zInner circuit

Type

QS5K2

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

<It is the same ratings for the Tr1 and Tr2>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

P

D

∗1

∗1

∗2

Limits Unit

30
12

±2.0
±8.0

0.8

3.2

1.25

150

−55 to +150

zThermal resistance

Parameter
Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

100

Rth(ch-a)

∗

TSMT5

2.9

1.9

0.950.95

(5)

(1)

0.4

Abbreviated symbol : K02

(5)

∗2 ∗2

∗1 ∗1

(1) (3)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(2)

VV
VV
AI
AI
AI
AI

W / TOTAL

W / ELEMENT0.9

°CTch
°CTstg

°C/W
°C/W139

1.0MAX

0.85

0.7

(4)

2.8

1.6

(3)(2)

0~0.1

0.16

Each lead has same dimensions

(4)

(1) Tr1 Gate
(2) Tr1 Source

Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Drain

0.6

~

0.3

Rev.A 1/3

Transistors

zElectrical characteristics (T a=25°C)

<It is the same characteristics for the Tr1 and Tr2>

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

<It is the same characteristics for the Tr1 and Tr2>

Parameter Symbol

∗ Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

Q

Q

gs

Q

gd

V

SD

∗

∗

fs

∗

∗

∗

∗

f

∗

g

∗

∗

∗

Min.−Typ. Max.

− 10 µAVGS=12V, VDS=0V

30 −−VID= 1mA, VGS=0V

−−1 µAV

0.5 − 1.5 V V

− 71 100 I

− 76 107 mΩ

− 110 154 I

1.5 −−SV

− 175 − pF V

− 5025− pF V

−

8

−

10

−

21

−

8

−

2.8

−

0.6

−

0.8

−−nC I

Min. Typ. Max.

−−1.2 V IS= 3.2A, VGS=0VForward voltage

Unit

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 2A, VGS= 4.5V

mΩ

D

= 2A, VGS= 4.0V

I

D

= 2A, VGS= 2.5V

mΩ

D

= 10V, ID= 2A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

3.9 nC

− nC V

V

DD

ID= 1A
V

GS

= 4.5V

R

L

= 15Ω

R

G

=10Ω

V

15V

DD

= 4.5V

GS

= 2A

D

Unit

QS5K2

Conditions

15V

Conditions

Rev.A 2/3