ROHM PTZ16B Technical data

PTZ16B

①

②

Diodes

Zener diode

PTZ16B

zApplica tions zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)

Voltage regulation

2.6±0.2

zFeatures

1) Small power mold type. (PMDS)

2) High ESD tolerance

zConstruction

1.5±0.2

4.5±0.2

2.0±0.2

1.2±0.3

0.1±0.02

　　　 0.1

5.0±0.3

PMDS

Silicon epitaxial planar zStructure

ROH M : PMDS
JEDEC : SOD-106

①

②

EX. P TZ10B

Manu fact ur e Dat e

zT aping dime nsions (Unit : mm)

4.0±0.1

2.0±0.05
φ1.55±0.05

4.0±0.12.9±0.1

φ1.55

zAbsolute maximum ratings (Ta=25°C)

ower dissipation

P

unction temperature

J

torage tem perature

S

Param eter

Sym bol Unit

Pm

Tj

Ts tg

Limits

1000

150

-5 5 to +15 0

℃
℃

2.0

2.0

4.2

0.3

1.75±0.1

5.5±0.05
12±0.2

9.5±0.1

5.3±0.1

　 0.05

2.8MAX

W

Rev.C 1/4

PTZ16B

Diodes

zElectrical characteristics (Ta=25°C)

PTZ 3.6B 3.600 3.813 4.000 40 15 40 60
PTZ 3.9B 3.900 4.136 4.400 40 15 40 40
PTZ 4.3B
PTZ 4.7B
PTZ 5.1B
PTZ 5.6B
PTZ 6.2B
PTZ 6.8B
PTZ 7.5B
PTZ 8.2B
PTZ 9.1B
PTZ 10B
PTZ 11B
PTZ 12B
PTZ 13B
PTZ 15B
PTZ 16B
PTZ 18B
PTZ 20B
PTZ 22B
PTZ 24B
PTZ 27B
PTZ 30B
PTZ 33B

PTZ 36B 36.000 39.240 40.000 10 20 10 10 27.0 37.0 10

1.The Zener voltage(Vz) is measured 40ms after power is supplied.

2.The operating resistances(Zz､Zzk) are measured by superimposing a minute alternating current on the regulated current(Iz).

zMarking (TYPE NO.)

TYP.

MIN.

4.300 4.572 4.800

4.700 4.924 5.200

5.100 5.368 5.700

5.600 5.856 6.300

6.200 6.509 7.000

6.800 7.280 7.700

7.500 7.889 8.400

8.200 8.655 9.300

9.100 9.747 10.200

10.000 10.310 11.200

11.000 11.510 12.300

12.000 12.500 13.500

13.300 13.820 15.000

14.700 15.350 16.500

16.200 16.860 18.300

18.000 19.000 20.300

20.000

22.000

24.000 25.310 27.600

27.000 28.700 30.800

30.000 31.570 34.000

33.000 34.950 37.000

TYPE
PTZ　3.6B
PTZ　3.9B
PTZ　4.3B
PTZ　4.7B
PTZ　5.1B
PTZ　5.6B
PTZ　6.2B
PTZ　6.8B
PTZ　7.5B

Zener voltage : Vz(V)

TYP.

20.820

23.850

MAX. Iz(mA) Max. Iz(mA) MAX. VR(V)

22.400

24.500

TYPE　NO.

3.6B

3.9B

4.3B

4.7B

5.1B

5.6B

6.2B

6.8B

7.5B

Operating resis tance : Zz(Ω)

40

15

40

10
40
40
40
40
40
40
40
40
20
20
20
20
20
20

8
8
6
6
4
4
6
6
8

8
10
10
12
12

20 14 20
10 14 10
10 16
10 16
10 18
10 18

TYPE
PTZ　8.2B
PTZ　9.1B

PTZ　10B
PTZ　11B
PTZ　12B
PTZ　13B
PTZ　15B
PTZ　16B
PTZ　18B

TYPE　NO.

Symbol

Reverse current : IR(μA)

40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20

10 10 19.0 21.6
10 10 21.0 24.6
10 10 23.0 27.5
10 10 25.0 30.8

8.2B

9.1B
10B
11B
12B
13B
15B

20 1.0 -2.1
20 1.0 -1.7
20 1.5 -0.6
20 2.5 1.4
20 3.0 2.5
20 3.5 3.2
20 4.0 4.2
20 5.0 5.0
20 6.0 5.9
10 7.0 6.9
10 8.0 7.9
10 9.0 8.7
10 10.0 10.1
10 11.0 11.8
10 12.0 13.3
10 13.0 15.0
10
10

TYPE
PTZ　20B
PTZ　22B
PTZ　24B
PTZ　27B
PTZ　30B
PTZ　33B
PTZ　36B

Temperature coefficiency :

TYP.

1.0 -2.8

1.0 -2.4

15.0 17.4 20

17.0 19.4 10

16B
18B

Iz(mA) MIN.

TYPE　NO.

20B
22B
24B
27B
30B
33B
36B

*γz(mV/℃)

ESD Break down voltage : ESD(kV)

40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20

10
10
10
10

30kV

Test Condition

C=150pF

Ω

R=330

forward

and
reverse :
10 times

Rev.C 2/4

Diodes

zElectrical characteristic curves (Ta=25°C)

100

10

ZENER C URR ENT:Iz(mA )

0.1

0.01

0.001

5.1

4.7

4.3

3.9

3.6

1

0 5 10 15 20 25 30 35 40 45

20

1615131211109.18.27.55.6 6.86.2

18

ZENER V OLTAGE:Vz(V )

Vz-Iz CHARACTERISTICS

22

PTZ16B

24

30

27

33

36

1200

1000

800

600

400

POWER DISSIPATION:Pd(W)

200

0

0 255075100125150

AMBIENT TEMPERATURE:Ta(℃)

Pd-Ta　CHARACTERISTICS

0.12

0.1

0.08

0.06

0.04

0.02

0

-0.02

-0.04

TEMP.COEFFICIENCE:γz(％/℃)

-0.06

-0.08
010203040

TIME:t( ms )

IFSM- t CHA RACT ERISTIC S

10000

PRSM

1000

100

POWER:PRSM(W)

10

REVERSE SURGE MAXIMUM

1

0.001 0.01 0.1 1 10 100

TIME: t(m s)

PRSM-TIME CHARACTERISTICS

40

35

30

25

20

15

10

5

0

-5

TRA NSIEN T

TEMP.COEFFICIENCE:γz(mV/℃)

Mounted on epoxy board

1000

IM=10mA IF=0.5A

100

10

1

THAERMAL IMPEDANCE:Rth (℃/W)

0.1

0.001 0.1 10 1000

time

1ms

300us

TIME:t( s)

Rth-t CHARACTERISTICS

t

Rth(j-a)

Rth(j-c)

Rev.C 3/4

Diodes

100

10

0.1

ZENER CUR RENT:Iz( mA)

0.01

0.001

Ta=25℃

1

Ta=-25℃

15 15.5 16 16.5 17 17.5 18 18.5 19

ZENER VOL TAGE：Vz (V)

Vz-Iz CH ARACTERIST ICS

Ta=150℃

Ta=125℃

Ta=75℃

100

10

1

0.1

0.01

0.001

REVERSE CURRENT:IR(nA)

0.0001

0.00001
0123456789101112

Ta=150℃

REVERSE VOL TAGE：VR (V)

VR-IR CHARACTERIS TICS

Ta=75℃

Ta=25℃

Ta=-25℃

Ta=125℃

PTZ16B

1000

f=1MHｚ

100

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

10

024681012

REVERSE VOL TAGE:VR( V)
VR-Ct CHARACTERISTICS

17.1

17

16.9

16.8

ZENER VOLTAGE:Vz(V)

16.7

16.6

10000

1000

100

DYNAMIC IMPEDANCE:Zz(Ω)

10

0.1 1 10

AVE:16.86V

Vz DISPERSION MAP

ZENER CURRENT:Iz(mA)

Zz-Iz CH ARACTERIST ICS

Ta=25℃
IZ=20mA
n=30pcs

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

REVERSE CURRENT:IR(nA)

0.1

0

30

25

20

15

ELECTROSTATIC

10

DISCHARGE TEST ESD(KV)

5

0

AVE:0.115nA

IR DISPERSION M AP

No break at 30kV

C=200pF

R=0Ω

ESD DISPERSION MAP

C=100pF
R=1.5kΩ

Ta=25℃

VR=12V
n=30pcs

C=150pF
R=330Ω

300

290

280

270

260

250

240

230

TERMINALS:Ct(pF)

220

CAPACITANCE BETWEEN

210

200

AVE:245.1pF

Ct DISPER SION M AP

Ta=25℃

f=1MHz
VR=0V

n=10pcs

Rev.C 4/4

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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