ROHM PTZ16B Technical data

PTZ16B

①

②

Diodes

Zener diode

PTZ16B

zApplica tions zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)

Voltage regulation

2.6±0.2

zFeatures

1) Small power mold type. (PMDS)

2) High ESD tolerance

zConstruction

1.5±0.2

4.5±0.2

2.0±0.2

1.2±0.3

0.1±0.02

　　　 0.1

5.0±0.3

PMDS

Silicon epitaxial planar zStructure

ROH M : PMDS
JEDEC : SOD-106

①

②

EX. P TZ10B

Manu fact ur e Dat e

zT aping dime nsions (Unit : mm)

4.0±0.1

2.0±0.05
φ1.55±0.05

4.0±0.12.9±0.1

φ1.55

zAbsolute maximum ratings (Ta=25°C)

ower dissipation

P

unction temperature

J

torage tem perature

S

Param eter

Sym bol Unit

Pm

Tj

Ts tg

Limits

1000

150

-5 5 to +15 0

℃
℃

2.0

2.0

4.2

0.3

1.75±0.1

5.5±0.05
12±0.2

9.5±0.1

5.3±0.1

　 0.05

2.8MAX

W

Rev.C 1/4

PTZ16B

Diodes

zElectrical characteristics (Ta=25°C)

PTZ 3.6B 3.600 3.813 4.000 40 15 40 60
PTZ 3.9B 3.900 4.136 4.400 40 15 40 40
PTZ 4.3B
PTZ 4.7B
PTZ 5.1B
PTZ 5.6B
PTZ 6.2B
PTZ 6.8B
PTZ 7.5B
PTZ 8.2B
PTZ 9.1B
PTZ 10B
PTZ 11B
PTZ 12B
PTZ 13B
PTZ 15B
PTZ 16B
PTZ 18B
PTZ 20B
PTZ 22B
PTZ 24B
PTZ 27B
PTZ 30B
PTZ 33B

PTZ 36B 36.000 39.240 40.000 10 20 10 10 27.0 37.0 10

1.The Zener voltage(Vz) is measured 40ms after power is supplied.

2.The operating resistances(Zz､Zzk) are measured by superimposing a minute alternating current on the regulated current(Iz).

zMarking (TYPE NO.)

TYP.

MIN.

4.300 4.572 4.800

4.700 4.924 5.200

5.100 5.368 5.700

5.600 5.856 6.300

6.200 6.509 7.000

6.800 7.280 7.700

7.500 7.889 8.400

8.200 8.655 9.300

9.100 9.747 10.200

10.000 10.310 11.200

11.000 11.510 12.300

12.000 12.500 13.500

13.300 13.820 15.000

14.700 15.350 16.500

16.200 16.860 18.300

18.000 19.000 20.300

20.000

22.000

24.000 25.310 27.600

27.000 28.700 30.800

30.000 31.570 34.000

33.000 34.950 37.000

TYPE
PTZ　3.6B
PTZ　3.9B
PTZ　4.3B
PTZ　4.7B
PTZ　5.1B
PTZ　5.6B
PTZ　6.2B
PTZ　6.8B
PTZ　7.5B

Zener voltage : Vz(V)

TYP.

20.820

23.850

MAX. Iz(mA) Max. Iz(mA) MAX. VR(V)

22.400

24.500

TYPE　NO.

3.6B

3.9B

4.3B

4.7B

5.1B

5.6B

6.2B

6.8B

7.5B

Operating resis tance : Zz(Ω)

40

15

40

10
40
40
40
40
40
40
40
40
20
20
20
20
20
20

8
8
6
6
4
4
6
6
8

8
10
10
12
12

20 14 20
10 14 10
10 16
10 16
10 18
10 18

TYPE
PTZ　8.2B
PTZ　9.1B

PTZ　10B
PTZ　11B
PTZ　12B
PTZ　13B
PTZ　15B
PTZ　16B
PTZ　18B

TYPE　NO.

Symbol

Reverse current : IR(μA)

40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20

10 10 19.0 21.6
10 10 21.0 24.6
10 10 23.0 27.5
10 10 25.0 30.8

8.2B

9.1B
10B
11B
12B
13B
15B

20 1.0 -2.1
20 1.0 -1.7
20 1.5 -0.6
20 2.5 1.4
20 3.0 2.5
20 3.5 3.2
20 4.0 4.2
20 5.0 5.0
20 6.0 5.9
10 7.0 6.9
10 8.0 7.9
10 9.0 8.7
10 10.0 10.1
10 11.0 11.8
10 12.0 13.3
10 13.0 15.0
10
10

TYPE
PTZ　20B
PTZ　22B
PTZ　24B
PTZ　27B
PTZ　30B
PTZ　33B
PTZ　36B

Temperature coefficiency :

TYP.

1.0 -2.8

1.0 -2.4

15.0 17.4 20

17.0 19.4 10

16B
18B

Iz(mA) MIN.

TYPE　NO.

20B
22B
24B
27B
30B
33B
36B

*γz(mV/℃)

ESD Break down voltage : ESD(kV)

40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20

10
10
10
10

30kV

Test Condition

C=150pF

Ω

R=330

forward

and
reverse :
10 times

Rev.C 2/4