ROHM MPSA56 Datasheet
SSTA56 / MMSTA56 / MPSA56
Transistors
PNP General Purpose Transistor
SSTA56 / MMSTA56 / MPSA56
Features
!
CEO
1) BV
< −
40V (IC = −1mA)
2) Complements the SSTA06 / MMSTA06 / MPSA06.
Package, marking and packaging specifications
!
Limits
−80
−80
−4
−0.5
0.2
0.625
150
55~+150
MPSA56
TO-92
-
T93
3000
Unit
V
V
V
A
W
°C
°C
Part No. SSTA56
Packaging type
Marking
Code
Basic ordering unit (pieces)
Absolute maximum ratings
!
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter Symbol
SSTA56, MMSTA56
MPSA56
SST3
T116
R2G
3000
V
V
V
Tstg
P
MMSTA56
SMT3
R2G
T146
3000
(Ta = 25°C)
CBO
CEO
EBO
I
C
C
Tj
−
External dimensions
!
SSTA56
(1)
ROHM : SST3
All terminals have same dimensions
MMSTA56
(1)
ROHM : SMT3
EIAJ : SC-59
MPSA56
ROHM : TO-92
EIAJ : SC-43
All terminals have same dimensions
0.2
±
4.8
(12.7Min.)
(1)
(Units : mm)
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(3)
+0.1
0.4
−0.05
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(3)
+0.1
0.4
−0.05
4.8±0.2
(2) (3)
5
2.5Min.
0.5
2.5
+0.2
0.95
−0.1
0.45±0.1
0.2
0.1
0.2
±
−
+
1.3
2.4
0.2
0.1
0.2
±
−
+
2.8
1.6
±
0.1
+
0.3
−
0.1
0.45
0~0.1
0.2Min.
+0.1
0.15
−0.06
1.1
+0.1
0.15
−0.06
3.7
±
0.1
+0.2
−0.1
0.8±0.1
±
0.2
0~0.1
2.3
0.6
~
0.3
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics
!
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
transfer ratio
DC current
Transition frequency
(Ta = 25°C)
CBO
BV
BV
CEO
I
CBO
I
CEO
CE(sat)
V
BE(on)
V
FE
h
T
f
V
V
µA
-
I
C
= −100µA
I
C
= −1mA
V
CB
= −80V
V
CE
= −60V
V
CE/IB
= −1V/−100mA
V
CE
= −1V , IC = −10mA
CE
= −1V , IC = −100mA100 -
−4
−80
-
-
--−0.25 V IC/IB = −100mA/−10mA
--−1.2 V
100 - -
50 - - MHz VCE = −1V , IE = 100mA , f = 100MHz
-
-
−0.1
-
−1
-
-
-V
-
-
Transistors
Electrical characteristic curves
!
500
Ta=25°C
mA)
400
300
200
100
-COLLECTOR CURRENT (
C
I
0
0.4 0.8 1.2 1.6
VCE-COLLECTOR-EMITTER VOLTAGE (
Fig.1 Grounded emitter output
characteristics
3.5mA
3.0mA
4.5mA
4.0mA
5.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
IB=0mA
1000
2.00
V)
SSTA56 / MMSTA56 / MPSA56
Ta=25°C
VCC=5V
100
hFE-DC CURRENT GAIN
10
1
Fig.2 DC current gain vs. collector
10 100 1000
IC-COLLECTOR CURRENT (
current ( Ι )
mA)
1000
Ta=125°C
25°C
3V
1V
100
-DC CURRENT GAIN
FE
h
10
1
−40°C
10 100 1000
IC-COLLECTOR CURRENT (
VCE=3V
mA)
Fig.3 DC current gain vs. collector
current ( ΙΙ )
V)
I
C
/ I
B
=10
0.3
Ta=125°C
0.2
0.1
COLLECTOR EMITTER SATURATION VOLTAGE (
CE(SAT)
0
V
1 10 100 1000
IC-COLLECTOR CURRENT (
mA)
−40
25
°C
°C
Fig.4 Collector emitter saturation
voltage vs. collector current
500
100
pF)
CAPACITANCE (
10
5
0.5
1 10 50
REVERSE BIAS VOLTAGE (
Cib
Cob
Ta=25
f=1MHz
V)
°C
Fig.7 Input/output capecitance
vs. voltage
1.8
V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
BASE EMITTER SATURATION VOLTAGE (
0.2
BE(SAT)
V
0
1 10 100 1000
IC-COLLECTOR CURRENT (
Fig.5 Base-emitter saturation
1000
voltage vs. collector current
MHz)
100
10
CURRENT GAIN-BANDWIDTH PRODUCT (
1
10 100 1000
IC-COLLECTOR CURRENT (
Fig.8 Gain bandwidth product
vs. collector current
Ta=25
I
C
/ I
B
=10
mA)
Ta=25
VCE=10V
mA)
1.8
°C
1.6
V)
1.4
1.2
1.0
0.8
0.6
0.4
BASE EMITTER VOLTAGE (
0.2
BE(ON)
V
0
1 10 100 1000
Ta=−40
25
°C
125
°C
IC-COLLECTOR CURRENT (
Fig.6 Grounded emitter propagation
°C
characteristics
VCE=3V
°C
mA)
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