
SSTA28 / MMSTA28
Transistors
NPN general purpose transistor
SSTA28 / MMSTA28
zFeatures
1) BV
CES
< 80V (Ic=100µA)
zPackage, marking and packaging specifications
Part No. SSTA28
Packaging type
Marking
Basic ordering unit (pieces)
Code
SST3
T116
3000
RAT
MMSTA2
SMT3
RAT
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Parameter Symbol
V
V
V
P
Tstg
CBO
CEO
EBO
I
Tj
Limits
80
80
12
C
0.3
C
0.2
150
−
55 to +150
Unit
W
°C
°C
V
V
V
A
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output Capecitance pF
Symbol Min. Typ.
BV
V
V
BV
BV
I
CBO
I
EBO
I
CES
CE(sat)
CE(sat)
BE(on)
V
h
COb
CBO
CES
EBO
1
2
FE
f
T
80
80
12
−
−−
−
−
−
− 1.4
10000
125
− 5.0
Rev.A 1/2
zExternal dimensions (Unit : mm)
SSTA28
ROHM : SST3
JEDEC : SOT-23
MMSTA28
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
−
−
−
−
−
0.7
0.8
−
−
200
Max.
−
−
−
0.1
0.1
0.5
1.2 V
1.5 V
2.0 V
−
−
−
8.0
2.9±0.2
1.9±0.2
0.95
0.95
(1)
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95
0.95
(1)
All terminals have same dimensions
Unit Conditions
V
I
C
V
C
I
V
E
I
µA
V
V
µA
µA
V
C/IB
I
C/IB
I
V
V
−
V
MHz V
V
+0.2
0.95
−0.1
0.45±0.1
(2)
0.2
0.1
0.2
±
−
+
1.3
2.4
(3)
+0.1
0.4
−0.05
(2)
0.2
0.1
0.2
±
−
+
2.8
1.6
(3)
+0.1
0.4
−0.05
0~0.1
0.2Min.
+0.1
0.15
−0.06
+0.2
1.1
−0.1
0.8±0.1
0~0.1
+0.1
0.15
−0.06
0.3Min.
= 100µA
= 100µA
= 10µA
CB
= 60V
EB
= 10V
CE
= 10V
= 10mA/10µA
= 100mA/0.1mA
CE/IB
= 5V/100mA
CE
= 5V , IC = 10mA
CE
= 5V , IC = 100mA10000
CE
= 5V , IE = 10mA , f = 100MHz
CB
= 10V , IE = 0 , f = 1MHz
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector

Transistors
SSTA28 / MMSTA28
zElectrical characteristic curves
500
Ta=25°C
450
400
mA)
350
300
250
200
150
100
-COLLECTOR CURRENT (
C
I
50
0
VCE-COLLECTOR-EMITTER VOLTAGE (
Fig.1 Grounded emitter output
characteristics
IB=0µA
100
90
5
4
80
4
3
3
70
2
2
60
1
50
1
40
30
20
-COLLECTOR CURRENT (mA)
C
I
10
0
2.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE-COLLECTOR-EMITTER VOLTAGE (
IB=0µA
Ta=25°C
1.41.6
1.2
1.0
0.8
0.6
0.4
0.2
Fig.2 Typical output characteristic
5
V)
200k
100k
50k
20k
10k
-DC CURRENT GAIN
FE
5k
h
2k
1 2 5 10 20 50 100 200 500 100
IC-COLLECTOR CURRENT (
Ta=25°C
VCE=5V
3V
1V
mA)
Fig.3 DC current gain vs. collector
current ( ΙΙ )
200k
100k
50k
20k
10k
-DC CURRENT GAIN
FE
5k
h
2k
1 2 5 10 20 50 100 200 500 100
Ta=25°C
25°C
−40°C
IC-COLLECTOR CURRENT (
mA)
Fig.4 DC current gain vs. collector
current
VCE=5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VOLTAGE (V)
0.4
0.2
COLLECTOR EMITTER SATURATION
0
CE(SAT)
1 2 5 10 20 50 100 200 500 100
V
Ta= −40°C
25°C
125°C
IC-COLLECTOR CURRENT (
Fig.5 Collecor emitter saturation
voltage vs collector current
Ic/I
mA)
B
=1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
VOLTAGE (V)
0.8
0.6
COLLECTOR EMITTER SATURATION
0.4
CE(SAT)
1 2 5 10 20 50 100 200 500 100
V
Ta= −40°C
25°C
125°C
IC-COLLECTOR CURRENT (
Fig.6 Base emitter saturation voltage
vs collector current
Ic/I
mA)
B
=1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
BASE EMITTER VOLTAGE (V)
0.6
BE(ON)
V
0.4
1 2 5 10 20 50 100 200 500 100
Ta= −40°C
25°C
125°C
IC-COLLECTOR CURRENT (
Fig.7 Base emitter "ON" voltage
vs collector current
mA)
CE
=5V
V
100
50
pF)
20
10
5
CAPACITANCE (
2
1
0.5
Cib
1 2 5 10 20 5
REVERSE BIAS VOLTAGE (
Cob
f=1MHz
Ta=25
V)
Fig.8 Capacitance
vs reverse bias voltage
1000
°C
MHz)
500
200
100
50
20
10
CURRENT GAIN-BANDWIDTH PRODUCT (
1
10 100 100
IC-COLLECTOR CURRENT (
Fig.9 Current gain-bandwdth produc
vs collector current
Ta=25
VCE=10V
mA)
°C
Rev.A 2/2

Appendix
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1