ROHM MMSTA28 Technical data
SSTA28 / MMSTA28
8
Transistors
NPN general purpose transistor
SSTA28 / MMSTA28
zFeatures
1) BV
CES
< 80V (Ic=100µA)
zPackage, marking and packaging specifications
Part No. SSTA28
Packaging type
Marking
Basic ordering unit (pieces)
Code
SST3
T116
3000
RAT
MMSTA2
SMT3
RAT
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Parameter Symbol
V
V
V
P
Tstg
CBO
CEO
EBO
I
Tj
Limits
80
80
12
C
0.3
C
0.2
150
−
55 to +150
Unit
W
°C
°C
V
V
V
A
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output Capecitance pF
Symbol Min. Typ.
BV
V
V
BV
BV
I
CBO
I
EBO
I
CES
CE(sat)
CE(sat)
BE(on)
V
h
COb
CBO
CES
EBO
1
2
FE
f
T
80
80
12
−
−−
−
−
−
− 1.4
10000
125
− 5.0
Rev.A 1/2
zExternal dimensions (Unit : mm)
SSTA28
ROHM : SST3
JEDEC : SOT-23
MMSTA28
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
−
−
−
−
−
0.7
0.8
−
−
200
Max.
−
−
−
0.1
0.1
0.5
1.2 V
1.5 V
2.0 V
−
−
−
8.0
2.9±0.2
1.9±0.2
0.95
0.95
(1)
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95
0.95
(1)
All terminals have same dimensions
Unit Conditions
V
I
C
V
C
I
V
E
I
µA
V
V
µA
µA
V
C/IB
I
C/IB
I
V
V
−
V
MHz V
V
+0.2
0.95
−0.1
0.45±0.1
(2)
0.2
0.1
0.2
±
−
+
1.3
2.4
(3)
+0.1
0.4
−0.05
(2)
0.2
0.1
0.2
±
−
+
2.8
1.6
(3)
+0.1
0.4
−0.05
0~0.1
0.2Min.
+0.1
0.15
−0.06
+0.2
1.1
−0.1
0.8±0.1
0~0.1
+0.1
0.15
−0.06
0.3Min.
= 100µA
= 100µA
= 10µA
CB
= 60V
EB
= 10V
CE
= 10V
= 10mA/10µA
= 100mA/0.1mA
CE/IB
= 5V/100mA
CE
= 5V , IC = 10mA
CE
= 5V , IC = 100mA10000
CE
= 5V , IE = 10mA , f = 100MHz
CB
= 10V , IE = 0 , f = 1MHz
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Transistors
5
0
5
0
5
0
5
0
5
0
.0
s
0
0
0
0
0
0
0
t
SSTA28 / MMSTA28
zElectrical characteristic curves
500
Ta=25°C
450
400
mA)
350
300
250
200
150
100
-COLLECTOR CURRENT (
C
I
50
0
VCE-COLLECTOR-EMITTER VOLTAGE (
Fig.1 Grounded emitter output
characteristics
IB=0µA
100
90
5
4
80
4
3
3
70
2
2
60
1
50
1
40
30
20
-COLLECTOR CURRENT (mA)
C
I
10
0
2.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE-COLLECTOR-EMITTER VOLTAGE (
IB=0µA
Ta=25°C
1.41.6
1.2
1.0
0.8
0.6
0.4
0.2
Fig.2 Typical output characteristic
5
V)
200k
100k
50k
20k
10k
-DC CURRENT GAIN
FE
5k
h
2k
1 2 5 10 20 50 100 200 500 100
IC-COLLECTOR CURRENT (
Ta=25°C
VCE=5V
3V
1V
mA)
Fig.3 DC current gain vs. collector
current ( ΙΙ )
200k
100k
50k
20k
10k
-DC CURRENT GAIN
FE
5k
h
2k
1 2 5 10 20 50 100 200 500 100
Ta=25°C
25°C
−40°C
IC-COLLECTOR CURRENT (
mA)
Fig.4 DC current gain vs. collector
current
VCE=5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VOLTAGE (V)
0.4
0.2
COLLECTOR EMITTER SATURATION
0
CE(SAT)
1 2 5 10 20 50 100 200 500 100
V
Ta= −40°C
25°C
125°C
IC-COLLECTOR CURRENT (
Fig.5 Collecor emitter saturation
voltage vs collector current
Ic/I
mA)
B
=1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
VOLTAGE (V)
0.8
0.6
COLLECTOR EMITTER SATURATION
0.4
CE(SAT)
1 2 5 10 20 50 100 200 500 100
V
Ta= −40°C
25°C
125°C
IC-COLLECTOR CURRENT (
Fig.6 Base emitter saturation voltage
vs collector current
Ic/I
mA)
B
=1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
BASE EMITTER VOLTAGE (V)
0.6
BE(ON)
V
0.4
1 2 5 10 20 50 100 200 500 100
Ta= −40°C
25°C
125°C
IC-COLLECTOR CURRENT (
Fig.7 Base emitter "ON" voltage
vs collector current
mA)
CE
=5V
V
100
50
pF)
20
10
5
CAPACITANCE (
2
1
0.5
Cib
1 2 5 10 20 5
REVERSE BIAS VOLTAGE (
Cob
f=1MHz
Ta=25
V)
Fig.8 Capacitance
vs reverse bias voltage
1000
°C
MHz)
500
200
100
50
20
10
CURRENT GAIN-BANDWIDTH PRODUCT (
1
10 100 100
IC-COLLECTOR CURRENT (
Fig.9 Current gain-bandwdth produc
vs collector current
Ta=25
VCE=10V
mA)
°C
Rev.A 2/2
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