SSTA06 / MMSTA06
Transistors
NPN General Purpose Transistor
SSTA06 / MMSTA06
zFeatu res
1) BV
CEO < 80V ( IC=1mA)
2) Complements the SSTA56 / MMST A56.
zPackage, marking and packaging specifications
Part No. SSTA06
Packaging type
Mark
Code
Basic ordering unit (pieces)
SST3
R1G
T116
3000
MMSTA06
SMT3
R1G
T146
3000
zAbsolute maximum ratings (Ta=25°C)
C
Limits
80
80
4
0.5
0.2
0.35
150
−55 to +150
Collector-base voltage
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation P
Junction temperature
Storage temperature
∗ Mounted on 7 x 5 x 0.6mm ceramic substrate.
Symbol
V
V
V
Tstg
CBO
CEO
EBO
I
Tj
C
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
V
V
CBO
CEO
EBO
I
CBO
I
CEO
CE(sat)
BE(ON)
h
T
f
80
80
4 −−VIE=100µAEmitter-base breakdown voltage
−
−
−−0.25 V IC/IB=100mA/10mA
−−1.2 V
FE
100 −
100 −
100 −−MHz VCE=2V, IE= −10mA, f=100MHz
−
−
−
−
−
zDimensions (Unit : mm)
SSTA06
ROHM : SST3
MMSTA06
ROHM : SMT3
EIAJ : SC-59
Unit
V
V
V
A
W
∗
W
°C
°C
−
V
V
µA
−
IC=100µA
I
C
=1mA
CB
=80V
V
V
CE
=60V
V
CE/IB
V
CE
=1V, IC=10mA
V
CE
=1V, IC=100mA
−
0.1
1
−
=1V/100mA
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Rev.B 1/3
SSTA06 / MMSTA06
Transistors
zElectrical characteristics curves
100
mA)
80
(
C
60
40
20
COLLECTOR CURRENT : I
500µA
Ta=25˚C
0
1.0 2.0 3.0 4.0
COLLECTOR-EMITTER VOLTAGE : V
450µA
400µA
350µA
300µA
250µA
200µA
150µA
100µA
50µA
IB=0µA
Fig.1 Grounded emitter output
characteristics
CE
(
V)
1000
5.00
V)
(
Ta=25˚C
CE(sat)
C
/ I
B
=10
I
0.3
0.2
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
1 10 100 1000
COLLECTOR CURRENT : IC (
Ta=125˚C
−40˚C
25˚C
mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=25˚C
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (
mA)
Fig.3 DC current gain vs. collector current ( I )
5V
VCE=10V
3V
1V
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT I
Ta=125˚C
25˚C
−40˚C
C :
(
mA)
Fig.4 DC current gain vs. collector current ( II )
Ta=25
VCE=5V
˚C
1.8
V)
(
1.6
BE(sat)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
ASE EMITTER SATURATION VOLTAGEV :
0
1 10 100 1000
Ta=−40
25˚C
125˚C
COLLECTOR CURRENT : IC (
Ta=25
IC / IB=10
˚C
mA)
Fig.5 Base-emitter saturation
voltage vs. collector current
˚C
Rev.B 2/3
SSTA06 / MMSTA06
Transistors
1.8
V)
1.6
(
1.4
BE(ON)
1.2
1.0
0.8
0.6
0.4
0.2
BASE EMITTER VOLTAGE : V
0
1 10 100 1000
Ta=−40˚C
25
˚C
125
˚C
COLLECTOR CURRENT : IC (
Ta=25
VCE=5V
mA)
Fig.6 Grounded emitter propagation
characteristics
100
˚C
pF)
10
CAPACITANCE (
0.5
Cib
Cob
1 2 5 10 20 50
REVERSE BIAS VOLTAGE (
Ta=25˚C
f=1MHz
V)
Fig.7 Input / output capacitance
vs. voltage
1000
MHz)
(
T
100
10
1
CURRENT GAIN-BANDWIDTH PRODUCT : f
10 100 1000
COLLECTOR CURRENT : IC (
Fig.8 Gain bandwidth product
vs. collector current
Ta=25˚C
CE
=5V
V
mA)
Rev.B 3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
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range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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